Characterization of polycrystalline VO2 thin film with low phase transition temperature fabricated by high power impulse magnetron sputtering

2016 ◽  
Vol 09 (02) ◽  
pp. 1650033 ◽  
Author(s):  
Tiegui Lin ◽  
Langping Wang ◽  
Xiaofeng Wang ◽  
Yufen Zhang
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Phase Transition Temperature ◽  
High Power ◽  
Photoelectron Spectroscopy ◽  
Lattice Distortion ◽  
Smart Windows ◽  
X Ray

VO2 is a unique material that undergoes a reversible phase transformation around 68[Formula: see text]C. Currently, applications of VO2 on smart windows are limited by its high transition temperature. In order to reduce the temperature, VO2 thin film was fabricated on quartz glass substrate by high power impulse magnetron sputtering with a modulated pulsed power. The phase transition temperature has been reduced to as low as 32[Formula: see text]C. In addition, the VO2 film possesses a typical metal–insulator transition. X-ray diffraction and selected area electron diffraction patterns reveal that an obvious lattice distortion has been formed in the as-deposited polycrystalline VO2 thin film. X-ray photoelectron spectroscopy proves that oxygen vacancies have been formed in the as-deposited thin film, which will induce a lattice distortion in the VO2 thin film.

X-ray Diffraction Topography of BaTiO3at Phase Transition Temperature

2009 ◽  
Vol 48 (9) ◽  
pp. 09KF01 ◽  
Author(s):  
Yasuhiro Yoneda ◽  
Yoshiki Kohmura ◽  
Yoshio Suzuki
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Phase Transition Temperature ◽  
X Ray Diffraction ◽  
X Ray

W-Doped VO2 (M) with Tunable Phase Transition Temperature

2013 ◽  
Vol 320 ◽  
pp. 483-487 ◽  
Author(s):  
Ming Li ◽  
Deng Bing Li ◽  
Jing Pan ◽  
Guang Hai Li
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transition Temperature ◽  
Phase Transition Temperature ◽  
Variable Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Infrared Transmittance ◽  
Transmission Electron ◽  
Potential Applications

W-doped VO2 (B) nanoneedles were successfully synthesized by solgel combing with hydrothermal treatment, in which the polyethylene glycol (PEG) was used as both surfactant and reducing. The metastable VO2 (B) was completely transformed to thermochromic VO2 (M) after annealing at high purity N2 atmosphere. The DSC results exhibit a strong crystallographic transition, and the phase transition temperature of VO2 (M) can be reduced to about 38 °C by W-doping. Field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HR-TEM) were used to characterize the morphology and crystalline structure of the samples. The variable-temperature infrared transmittance spectra of VO2 (M) demonstrate their potential applications in energy saving field.

scholarly journals Tuning Anatase-Rutile Phase Transition Temperature: TiO2/SiO2 Nanoparticles Applied in Dye-Sensitized Solar Cells

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
Billy N. Cardoso ◽  
Emerson C. Kohlrausch ◽  
Marina T. Laranjo ◽  
Edilson V. Benvenutti ◽  
Naira M. Balzaretti ◽  
...  
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Surface Area ◽  
Phase Transition Temperature ◽  
Dye Sensitized Solar Cells ◽  
Rutile Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Molar Percent

TiO2/SiO2 nanoparticles with 3, 5, and 10 molar percent of silica, were synthesized by hydrothermal method and characterized by SEM, TEM, N2 adsorption-desorption isotherms, X-ray diffraction, and Raman and UV-Vis spectroscopy. While pristine TiO2 thermally treated at 500°C presents a surface area of 36 m2 g-1 (±10 m2 g-1), TiO2/SiO2 containing 3, 5, and 10 molar percent of silica present surface areas of 93, 124, and 150 m2 g-1 (±10 m2 g-1), respectively. SiO2 is found to form very small amorphous domains well dispersed in the TiO2 matrix. X-ray diffraction and Raman spectroscopy data show that anatase-to-rutile phase transition temperature is delayed by the presence of SiO2, enabling single-anatase phase photoanodes for DSSCs. According to the I×V measurements, photoanodes with 3% of SiO2 result in improved efficiency, which is mainly related to increased surface area and dye loading. In addition, the results suggest a gain in photocurrent related to the passivation of defects by SiO2.

Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Simple Method ◽  
X Ray ◽  
Post Annealing ◽  
Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

Fabrication of Vanadium Oxide Film with Low Phase Transition Temperature by Magnetron Sputtering and Reduction Post-Anneal Method

2014 ◽  
Vol 496-500 ◽  
pp. 227-230
Author(s):  
Ya Qiao ◽  
Yuan Lu ◽  
Hua Yang ◽  
Yong Shun Ling
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Phase Transition Temperature ◽  
Characteristic Curve ◽  
Glass Substrates ◽  
Vanadium Metal ◽  
Vanadium Dioxide Film ◽  
Vanadium Oxide Thin Films

Vanadium oxide thin films were deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target and subsequent reduction annealing. The deposition and annealing parameters were given in detail. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The phase transition of the film was observed by measuring its resistance-temperature (R-T) characteristic curve. The results indicated that the film fabricated had a semiconductor-metal phase transition temperature of about 52°C, which is 16°C lower than the common phase transition temperature of vanadium dioxide film.

Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

2015 ◽  
Vol 1731 ◽  
Author(s):  
M. Baseer Haider ◽  
Mohammad F. Al-Kuhaili ◽  
S. M. A. Durrani ◽  
Venkatesh Singaravelu ◽  
Iman Roqan
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Study ◽  
Secondary Phases ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Doped Zno

ABSTRACTThin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase.

Order Parameter Distribution and Phase Transition Temperature for a Thin Film With Asymmetric Boundaries

2012 ◽  
Vol 437 (1) ◽  
pp. 8-15 ◽  
Author(s):  
K. R. Gabbasova ◽  
A. L. Pirozerskii ◽  
E. V. Charnaya ◽  
Cheng Tien ◽  
A. S. Bugaev
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Transition Temperature ◽  
Phase Transition Temperature ◽  
Order Parameter ◽  
Parameter Distribution
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