Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

2011 ◽  
Vol 4 (11) ◽  
pp. 114101 ◽  
Author(s):  
Daniel Morgan ◽  
Mahbuba Sultana ◽  
Husna Fatima ◽  
Sho Sugiyama ◽  
Qhalid Fareed ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

scholarly journals Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

2018 ◽  
Vol 123 (2) ◽  
pp. 024902 ◽  
Author(s):  
Fengzai Tang ◽  
Kean B. Lee ◽  
Ivor Guiney ◽  
Martin Frentrup ◽  
Jonathan S. Barnard ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact

2007 ◽  
Vol 46 (1) ◽  
pp. 115-118 ◽  
Author(s):  
Takahiro Fujii ◽  
Norio Tsuyukuchi ◽  
Yoshikazu Hirose ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors
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