Acceptors in n-Type Silicon Crystals Induced by Plastic Deformation

1980 ◽  
Vol 19 (10) ◽  
pp. L629-L632 ◽  
Author(s):  
Haruhiko Ono ◽  
Koji Sumino
Keyword(s):  
Plastic Deformation ◽  
Type Silicon ◽  
Silicon Crystals

Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals

2013 ◽  
Vol 69 (9) ◽  
pp. 686-689 ◽  
Author(s):  
Mukannan Arivanandhan ◽  
Raira Gotoh ◽  
Kozo Fujiwara ◽  
Satoshi Uda ◽  
Yasuhiro Hayakawa ◽  
...  
Keyword(s):  
Type Silicon ◽  
Silicon Crystals ◽  
P Type ◽  
Photovoltaic Characteristics ◽  
Co Doped

scholarly journals Influence of light intensity on the lifetime of carriers in silicon investigated by a photoacoustic method

2016 ◽  
Vol 24 (2) ◽  
Author(s):  
L. Bychto ◽  
M. Maliński
Keyword(s):  
Light Intensity ◽  
Measurement Method ◽  
Experimental Results ◽  
Low Intensity ◽  
Photoacoustic Method ◽  
Type Silicon ◽  
Silicon Crystals

AbstractThe paper presents experimental results of the lifetime of light induced excess carriers in the n−type silicon. The lifetimes of carriers of silicon crystals were analysed as a function of the intensity of light illuminating the sample. As a measurement method of the lifetime of carriers, the photoacoustic method in a transmission configuration with different surfaces was used. The dependence character was next analysed in the frame of the Shockley Reed Hall statistics in approximation of the light low intensity.

Plastic deformation of filamentary silicon crystals. Relation to formation of dislocations at the surface and evolution of ensemble of these in volume

1993 ◽  
Vol 36 (5) ◽  
pp. 469-475
Author(s):  
S. A. Antipov ◽  
I. L. Bataronov ◽  
A. I. Drozhzhin ◽  
A. P. Ermakov ◽  
A. M. Roshchupkin ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Silicon Crystals
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