Visible Photoluminescence from Anodically Oxidized Porous Silicon

AbstractWe have studied the origin of the visible photoluminescence (PL) from oxidized porous Si. The hydrogen–passivated surface of porous Si prepared by electrochemical etching is converted to stable silicon oxides by rapid–thermal–oxidization processes. At low oxidation temperature (Tox), the PL spectrum with a peak near 700 nm is observed. At high Tox above 800 °C, a strong blue PL is observed near 400 nm. We discuss the origin of blue and red PL by employing the results of ab initio electronic structure calculations of silicon–oxygen compounds.

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Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.l207 ◽

1992 ◽

Vol 31 (Part 2, No. 3A) ◽

pp. L207-L209 ◽

Cited By ~ 32

Author(s):

Tomoyoshi Motohiro ◽

Tetsu Kachi ◽

Fusayoshi Miura ◽

Yasuhiko Takeda ◽

Shi-aki Hyodo ◽

...

Keyword(s):

Porous Silicon ◽

Excitation Spectra ◽

Visible Photoluminescence

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Anisotropic polarization memory in thermally oxidized porous silicon

Applied Physics Letters ◽

10.1063/1.1316068 ◽

2000 ◽

Vol 77 (15) ◽

pp. 2316-2318 ◽

Cited By ~ 8

Author(s):

Hideki Koyama ◽

Philippe M. Fauchet

Keyword(s):

Porous Silicon ◽

Oxidized Porous Silicon

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Optical gain in dye-doped polymer waveguides using oxidized porous silicon cladding

10.1117/12.721400 ◽

2007 ◽

Cited By ~ 2

Author(s):

Daniel Navarro-Urrios ◽

Mher Ghulinyan ◽

Paolo Bettotti ◽

Néstor Capuj ◽

Claudio J. Oton ◽

...

Keyword(s):

Porous Silicon ◽

Optical Gain ◽

Polymer Waveguides ◽

Oxidized Porous Silicon ◽

Doped Polymer

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Observation of quantum-confined luminescence in partially oxidized porous silicon

Philosophical Magazine B ◽

10.1080/13642810008209775 ◽

2000 ◽

Vol 80 (4) ◽

pp. 679-689 ◽

Cited By ~ 4

Author(s):

Giampiero Amato ◽

L. Boarino ◽

D. Midellino ◽

A. M. Rossi

Keyword(s):

Porous Silicon ◽

Oxidized Porous Silicon ◽

Quantum Confined

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Strongly Superlinear Light Emission and Large Induced Absorption in Oxidized Porous Silicon Films

MRS Proceedings ◽

10.1557/proc-536-9 ◽

1998 ◽

Vol 536 ◽

Cited By ~ 3

Author(s):

H. Koyama ◽

P. M. Fauchet

Keyword(s):

Porous Silicon ◽

Thermal Effects ◽

Light Emission ◽

Laser Intensity ◽

Excitation Intensity ◽

Silicon Films ◽

Free Standing ◽

Induced Absorption ◽

Cw Laser ◽

Oxidized Porous Silicon

AbstractThe optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm2. This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by ≤99.7 %.The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.

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