Solid-Phase Reactions of Diffusion Barriers of Ti and TiN to Copper Layers onSiO2

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 4027-4033 ◽  
Author(s):  
Mayumi Takeyama ◽  
Atsushi Noya ◽  
Kouichirou Sakanishi ◽  
Hikaru Seki ◽  
Katsutaka Sasaki
Keyword(s):  
Solid Phase ◽  
Diffusion Barriers ◽  
Solid Phase Reactions

Solid-phase reactions limited by an energy barrier

1997 ◽  
Vol 42 (11) ◽  
pp. 1270-1274
Author(s):  
A. I. Baranov ◽  
N. I. Boyarkina ◽  
A. V. Vasil’ev
Keyword(s):  
Energy Barrier ◽  
Solid Phase ◽  
Solid Phase Reactions

Solid phase reactions between Fe thin films and Si-Ge layers on Si

2004 ◽  
Vol 461 (1) ◽  
pp. 81-85 ◽  
Author(s):  
C.H Yu ◽  
Y.L Chueh ◽  
S.W Lee ◽  
S.L Cheng ◽  
L.J Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Reactions

Thermodynamical study of (CaGa2S4)x(BaGa2S4)1−x solid solutions

2021 ◽  
pp. 2150469
Author(s):  
T. G. Naghiyev ◽  
R. M. Rzayev
Keyword(s):  
Free Energy ◽  
Solid Solutions ◽  
Calculation Method ◽  
Solid Phase ◽  
Ternary Compounds ◽  
Free Energy Of Formation ◽  
Concentration Dependences ◽  
Solid Phase Reactions ◽  
Two Phases ◽  
Energy Of Formation

The solid solutions of [Formula: see text] were synthesized by solid-phase reactions from powder components of CaS, BaS, and Ga2S3. The temperature-concentration dependences of the Gibbs free energy of formation of [Formula: see text] solid solutions from ternary compounds and phase diagrams of the CaGa2S4–BaGa2S4 were determined by a calculation method. It was revealed that continuous solid solutions are formed in these systems. The spinodal decomposition of [Formula: see text] solid solutions into two phases is predicted at ordinary temperatures.

Solid‐phase reactions and crystallographic structures in Zr/Si systems

1991 ◽  
Vol 69 (10) ◽  
pp. 7050-7056 ◽  
Author(s):  
T. Yamauchi ◽  
S. Zaima ◽  
K. Mizuno ◽  
H. Kitamura ◽  
Y. Koide ◽  
...  
Keyword(s):  
Solid Phase ◽  
Crystallographic Structures ◽  
Solid Phase Reactions

scholarly journals Структура, зеренное строение и диэлектрические свойства керамик твердых растворов YCu-=SUB=-x-=/SUB=-Mn-=SUB=-1-x-=/SUB=-O-=SUB=-3-=/SUB=-

2021 ◽  
Vol 63 (3) ◽  
pp. 400
Author(s):  
А.В. Назаренко ◽  
А.В. Павленко ◽  
К.Г. Абдулвахидов
Keyword(s):  
Solid Phase ◽  
Hexagonal Phase ◽  
Anomalous Behavior ◽  
Ceramic Technology ◽  
Grain Structure ◽  
Dielectric Characteristics ◽  
Liquid Phases ◽  
Solid Phase Reactions ◽  
Interlayer Polarization ◽  
Isostructural Phase Transition

Solid solution ceramics of the YCuxMn1-xO3 system at x = 0.05; 0.10; 0.15 were prepared by solid-phase reactions followed by sintering using conventional ceramic technology. The study of their structure, microstructure and dielectric properties including of temperature and frequencies investigation of dielectric permittivity, conductivity and tangent of dielectric loses is carried out. It is established that hexagonal phase is predominantly formed in the ceramics. Its grain structure is unhomogenius, while synthesis is performed with the formation of liquid phases of eutectic origin. It is shown that anomalous behavior of dielectric characteristics at Т=30-200 ºС connected to interlayer polarization effects, while features at Т = 222 ºС (x = 0.05), 234 ºС (x = 0.10) and 247 ºС (x = 0.15) we connected to “isostructural” phase transition that is intermediate between the ferroelectric and paraelectric phases.

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