Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy

1997 ◽  
Vol 36 (Part 2, No. 12B) ◽  
pp. L1625-L1627 ◽  
Author(s):  
Wei-Kuo Chen ◽  
Yung-Chung Pan ◽  
Heng-Ching Lin ◽  
Jehn Ou ◽  
Wen-Hsiung Chen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray

Characterization of lattice mosaic ofa-plane GaN grown onr-plane sapphire by metalorganic vapor-phase epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Shizutoshi Ando ◽  
Kazuhiro Ohkawa
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Morphological Transition ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.

Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
T. Ishiguro ◽  
Y. Kobori ◽  
Y. Nagawa ◽  
Y. Iwamura ◽  
S. Yamaguchi
Keyword(s):  
Crystal Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Electrical Characterization ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Carrier Gases

ABSTRACTInSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

2014 ◽  
Vol 407 ◽  
pp. 68-73 ◽  
Author(s):  
Guangxu Ju ◽  
Shingo Fuchi ◽  
Masao Tabuchi ◽  
Hiroshi Amano ◽  
Yoshikazu Takeda
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray

Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy

2015 ◽  
Vol 31 ◽  
pp. 100-105 ◽  
Author(s):  
C. Bilel ◽  
H. Fitouri ◽  
I. Zaied ◽  
A. Bchetnia ◽  
A. Rebey ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor phase epitaxy using alternative sources

1998 ◽  
Vol 27 (2) ◽  
pp. 81-84 ◽  
Author(s):  
B. K. Han ◽  
L. Li ◽  
M. J. Kappers ◽  
R. F. Hicks ◽  
H. Yoon ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Alternative Sources

Metalorganic vapor phase epitaxy and characterization of Zn1−xFexSe films

1996 ◽  
Vol 68 (16) ◽  
pp. 2270-2272 ◽  
Author(s):  
T. J. Mountziaris ◽  
J. Peck ◽  
S. Stoltz ◽  
W. Y. Yu ◽  
A. Petrou ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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