Growth of ZnO Thin Films on LiNbO3Substrates by Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.5220 ◽

1998 ◽

Vol 37 (Part 1, No. 9B) ◽

pp. 5220-5223 ◽

Author(s):

Hee-Bog Kang ◽

Kenji Yoshida ◽

Kiyoshi Nakamura

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

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Study of the effect of plasma power on ZnO thin films growth using electron cyclotron resonance plasma-assisted molecular-beam epitaxy

Applied Surface Science ◽

10.1016/j.apsusc.2008.09.068 ◽

2008 ◽

Vol 255 (5) ◽

pp. 3375-3380 ◽

Author(s):

Z. Yang ◽

J.-H. Lim ◽

S. Chu ◽

Z. Zuo ◽

J.L. Liu

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Zno Thin Films ◽

Plasma Power ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Passivation of GaAs(110) with Ga2O3 thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.1497455 ◽

2002 ◽

Vol 92 (5) ◽

pp. 2330-2334 ◽

Author(s):

D. Kim ◽

G. Chen ◽

X. Y. Mei ◽

H. E. Ruda

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.353870 ◽

1993 ◽

Vol 73 (1) ◽

pp. 448-455 ◽

Author(s):

C. R. Eddy ◽

T. D. Moustakas ◽

J. Scanlon

Keyword(s):

Gallium Nitride ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Electron Cyclotron ◽

Resonance Microwave

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Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581744 ◽

1999 ◽

Vol 17 (4) ◽

pp. 2166-2169 ◽

Author(s):

I. Berishev ◽

E. Kim ◽

A. Fartassi ◽

M. Sayhi ◽

A. Bensaoula

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

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Single-Crystalline ZnO Films Grown on (0001)Al2O3 Substrate by Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.l933 ◽

1997 ◽

Vol 36 (Part 2, No. 7B) ◽

pp. L933-L935 ◽

Author(s):

Hee-Bog Kang ◽

Kiyoshi Nakamura ◽

Kenji Yoshida ◽

Kazuo Ishikawa

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Zno Films ◽

Al2o3 Substrate ◽

Single Crystalline

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Si1−x−yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy

Materials Science and Engineering B ◽

10.1016/s0921-5107(01)00802-9 ◽

2002 ◽

Vol 89 (1-3) ◽

pp. 296-302 ◽

Author(s):

J.-M Baribeau ◽

D.J Lockwood ◽

J Balle ◽

S.J Rolfe ◽

G.I Sproule

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.1450255 ◽

2002 ◽

Vol 80 (6) ◽

pp. 968-970 ◽

Author(s):

Tokuo Yodo ◽

Hiroaki Yona ◽

Hironori Ando ◽

Daiki Nosei ◽

Yoshiyuki Harada

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Band Edge ◽

Si Substrates ◽

Strong Band ◽

Edge Luminescence ◽

Band Edge Luminescence

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Photoluminescence of Undoped GaN Grown on c-Plane $\bf Al_{2}O_{3}$ by Electron Cyclotron Resonance Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l1575 ◽

1995 ◽

Vol 34 (Part 2, No. 12A) ◽

pp. L1575-L1578 ◽

Author(s):

Sung Hwan Cho ◽

Takahiro Maruyama ◽

Katsuhiro Akimoto

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron

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Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment

Review of Scientific Instruments ◽

10.1063/1.1141371 ◽

1990 ◽

Vol 61 (9) ◽

pp. 2407-2411 ◽

Author(s):

Z. Sitar ◽

M. J. Paisley ◽

D. K. Smith ◽

R. F. Davis

Keyword(s):

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Plasma Source ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

And Performance ◽

Resonance Plasma

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Electrical properties of GaAs selectively grown by electron cyclotron resonance plasma‐excited molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.105221 ◽

1991 ◽

Vol 58 (6) ◽

pp. 604-606 ◽

Author(s):

Norio Yamamoto ◽

Naoto Kondo ◽

Yasushi Nanishi

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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