Noise Performance of Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Wide Head T-Shaped Gate Recessed by Electron Cyclotron Resonance Plasma Etching

1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 654-657 ◽  
Author(s):  
Jin-Hee Lee ◽  
Hyung-Sup Yoon ◽  
Byung-Sun Park ◽  
Sung-Jae Meang ◽  
Chul-Wook Lee ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Electron Mobility ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Noise Performance ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Resonance Plasma

Effects of Surface Passivation and Deposition Methods on the 1/ $f$ Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

2015 ◽  
Vol 36 (4) ◽  
pp. 315-317 ◽  
Author(s):  
Thanh Ngoc Thi Do ◽  
Anna Malmros ◽  
Piero Gamarra ◽  
Cedric Lacam ◽  
Marie-Antoinette Di Forte-Poisson ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Surface Passivation ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Noise Performance ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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