Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 µm Technology

Jung-Chun Lin; Shuang-Yuan Chen; Hung-Wen Chen; Ze-Wei Jhou; Hung-Chuan Lin; Sam Chou; Joe Ko; Tien-Fu Lei; Heng-Sheng Haung

doi:10.1143/jjap.45.3144

Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 µm Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3144 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3144-3146 ◽

Cited By ~ 5

Author(s):

Jung-Chun Lin ◽

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Ze-Wei Jhou ◽

Hung-Chuan Lin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Elevated Temperatures ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Effect Transistor ◽

Hot Carrier Degradation

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Research on correlation of 1/fγ noise and hot carrier degradation in metal oxide semiconductor field effect transistor

Acta Physica Sinica ◽

10.7498/aps.57.2468 ◽

2008 ◽

Vol 57 (4) ◽

pp. 2468

Author(s):

Liu Yu-An ◽

Du Lei ◽

Bao Jun-Lin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Effect Transistor ◽

Hot Carrier Degradation

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Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n-channel metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.4891847 ◽

2014 ◽

Vol 105 (4) ◽

pp. 043506 ◽

Cited By ~ 2

Author(s):

G. Gruber ◽

P. Hadley ◽

M. Koch ◽

T. Aichinger

Keyword(s):

Magnetic Resonance ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Magnetic Resonance Study ◽

Hot Carrier ◽

Electrically Detected Magnetic Resonance ◽

Effect Transistor

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STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR

Acta Physica Sinica ◽

10.7498/aps.49.1241 ◽

2000 ◽

Vol 49 (7) ◽

pp. 1241

Author(s):

REN HONG-XIA ◽

HAO YUE ◽

XU DONG-GANG

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Carrier Effect ◽

Effect Transistor ◽

Hot Carrier Effect

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Hot Carrier Relief of Metal Oxide Semiconductor Field Effect Transistor by Using Work-Function Engineering

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l2286 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2286-L2288 ◽

Cited By ~ 4

Author(s):

Udo Schwalke ◽

Wilfried Hänsch ◽

Arnulf Lill

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Effect Transistor

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Effects of Nitride Lightly-Doped-Drain Spacers on Inter-Metal-Dielectrics-Induced Metal Oxide Semiconductor Field Effect Transistor Degradation under Hot Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.l28 ◽

2000 ◽

Vol 39 (Part 2, No. 1A/B) ◽

pp. L28-L30

Author(s):

Jengping Lin ◽

Willie Liu ◽

Chi-Hui Lin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

Effect Transistor ◽

Lightly Doped Drain

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Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal-oxide-semiconductor field effect transistor

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581022 ◽

1998 ◽

Vol 16 (2) ◽

pp. 855-859 ◽

Cited By ~ 2

Author(s):

W. S. Kwan ◽

M. J. Deen

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scattering Parameters ◽

Hot Carrier ◽

Effect Transistor ◽

Hot Carrier Effects ◽

Lightly Doped Drain

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Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 µm Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.1527 ◽

2008 ◽

Vol 47 (3) ◽

pp. 1527-1531 ◽

Cited By ~ 7

Author(s):

Shuang-Yuan Chen ◽

Chia-Hao Tu ◽

Jung-Chun Lin ◽

Mu-Chun Wang ◽

Po-Wei Kao ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Elevated Temperatures ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Degradation

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Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.5889 ◽

2005 ◽

Vol 44 (8) ◽

pp. 5889-5892 ◽

Cited By ~ 2

Author(s):

Yukiharu Uraoka ◽

Hiroyuki Honda ◽

Takashi Fuyuki ◽

Takaoki Sasaki ◽

Mitsuo Yasuhira

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Carrier Effect ◽

Effect Transistor ◽

Hot Carrier Effect

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Hot-Carrier-Induced Degradation on 0.1 µm Partially Depleted Silicon-On-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.1993 ◽

2003 ◽

Vol 42 (Part 1, No. 4B) ◽

pp. 1993-1998

Author(s):

Wen-Kuan Yeh ◽

Wen-Han Wang ◽

Yean-Kuen Fang ◽

Fu-Liang Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Effect Transistor

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Charging and discharging properties of electron traps created by hot‐carrier injections in gate oxide ofn‐channel metal oxide semiconductor field effect transistor

Journal of Applied Physics ◽

10.1063/1.353065 ◽

1993 ◽

Vol 73 (5) ◽

pp. 2559-2563 ◽

Cited By ~ 28

Author(s):

Dominique Vuillaume ◽

Alain Bravaix

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Traps ◽

Hot Carrier ◽

Effect Transistor

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