Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4Substrates by Pulsed-Laser Deposition

2006 ◽  
Vol 45 (No. 17) ◽  
pp. L457-L459 ◽  
Author(s):  
Guoqiang Li ◽  
Jitsuo Ohta ◽  
Koichiro Okamoto ◽  
Atsushi Kobayashi ◽  
Hiroshi Fujioka
2013 ◽  
Vol 48 (5) ◽  
pp. 308-313 ◽  
Author(s):  
Yen-Teng Ho ◽  
Kuo-Shu Chang ◽  
Kou-Chen Liu ◽  
Li-Zen Hsieh ◽  
Mei-Hui Liang

2002 ◽  
Vol 237-239 ◽  
pp. 591-595 ◽  
Author(s):  
Yoshiharu Kakehi ◽  
Satoru Nakao ◽  
Kazuo Satoh ◽  
Tadaoki Kusaka

2006 ◽  
Vol 89 (11) ◽  
pp. 111918 ◽  
Author(s):  
Atsushi Kobayashi ◽  
Jitsuo Ohta ◽  
Yuji Kawaguchi ◽  
Hiroshi Fujioka

2014 ◽  
Vol 1633 ◽  
pp. 19-24
Author(s):  
T. Hanawa ◽  
N. Kikuchi ◽  
K. Nishio ◽  
K. Tonooka ◽  
R. Wang ◽  
...  

ABSTRACTLead-free, piezoelectric (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were epitaxially grown onto (100) SrTiO3 substrate via pulsed laser deposition. The effects of post-annealing temperature on the crystal phases, mosaic spread, and chemical composition of the deposited (Na,K)NbO3 and (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were analyzed. Results indicate the epitaxial growth of (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at an oxygen pressure (PO2) of ≥40 Pa and substrate temperature (Ts) of 800°C. The alkaline-deficiency could be suppressed in the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at PO2 ≥ 70 Pa. AFM profile of the (Na,K)NbO3 post-annealed at 1000°C indicates the epitaxial growth of film with atomically flat step-terrace structure, while that of the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 film post-annealed at 1200°C shows relatively smooth surface with step-terrace structure and several cubic crystals. It was also found that the preferential evaporation of alkaline components could be suppressed by annealing under covered substrate condition.


Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 131
Author(s):  
Tingting Xiao ◽  
Qi Yang ◽  
Jian Yu ◽  
Zhengwei Xiong ◽  
Weidong Wu

FePt nanoparticles (NPs) were embedded into a single-crystal MgO host by pulsed laser deposition (PLD). It was found that its phase, microstructures and physical properties were strongly dependent on annealing conditions. Annealing induced a remarkable morphology variation in order to decrease its total free energy. H2/Ar (95% Ar + 5% H2) significantly improved the L10 ordering of FePt NPs, making magnetic coercivity reach 37 KOe at room temperature. However, the samples annealing at H2/Ar, O2, and vacuum all showed the presence of iron oxide even with the coverage of MgO. MgO matrix could restrain the particles’ coalescence effectively but can hardly avoid the oxidation of Fe since it is extremely sensitive to oxygen under the high-temperature annealing process. This study demonstrated that it is essential to anneal FePt in a high-purity reducing or ultra-high vacuum atmosphere in order to eliminate the influence of oxygen.


2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.


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