Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal–Oxide–Semiconductor Field-Effect-Transistor Approach

2010 ◽  
Vol 49 (4) ◽  
pp. 040209 ◽  
Author(s):  
Shuu'ichirou Yamamoto ◽  
Yusuke Shuto ◽  
Satoshi Sugahara
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Random Access ◽  
Random Access Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Effect Transistor

Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage

2020 ◽  
Vol 20 (11) ◽  
pp. 6596-6602
Author(s):  
Won Douk Jang ◽  
Young Jun Yoon ◽  
Min Su Cho ◽  
Jun Hyeok Jung ◽  
Sang Ho Lee ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Field Effect Transistor ◽  
Random Access ◽  
Random Access Memory ◽  
Metal Oxide Semiconductor ◽  
Dynamic Random Access Memory ◽  
Oxide Semiconductor ◽  
Access Memory ◽  
Polysilicon Layer ◽  
Effect Transistor

In this work, a capacitorless one-transistor embedded dynamic random-access memory based on a metal-oxide-semiconductor field-effect transistor with a double-polysilicon layer structure has been proposed and investigated using technology computer-aided design simulation. By using the grain boundary for hole storage, a higher sensing margin of 4.35 /μA//μm is achieved compared to that without using the grain boundary. Furthermore, the proposed device achieves a superior retention time of 555.77 /μs, which is reasonable from the viewpoint of its application in embedded systems (>100 /μs), even at a high temperature of 358 K. For higher device reliability, the effect of the grain boundary on the capacitorless one-transistor embedded dynamic random-access memory is analyzed with different trap distributions. The proposed capacitorless one-transistor embedded dynamic random-access memory cell exhibited superior reliability in terms of retention time (>100 /μs).

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