Electron Spin Resonance Observation of Bias-Temperature Stress-Induced Interface Defects at NO/N$_{2}$O-Annealed Chemical-Vapor-Deposition SiO$_{2}$/(100) p-Si Substrates

2011 ◽  
Vol 50 ◽  
pp. 114101
Author(s):  
Hiroyuki Mitoh ◽  
Shinichiro Ando ◽  
Hayato Miyagawa ◽  
Shyun Koshiba ◽  
Ziyuan Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Spin Resonance ◽  
Temperature Stress ◽  
Electron Spin ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrates ◽  
Interface Defects ◽  
Spin Resonance ◽  
Bias Temperature Stress

Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-κ Dielectric Layers on Silicon

2003 ◽  
Vol 786 ◽  
Author(s):  
A. L. Stesmans ◽  
V.V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Layers ◽  
Growth Standard ◽  
Spin Resonance ◽  
Dielectric Interfaces ◽  
Standard Quality

ABSTRACTElectron spin resonance (ESR) analysis of (100)Si/SiOx/ZrO2, (100)Si/Al2O3 and Si/HfO2 structures with nm-thin dielectric layers deposited by different chemical vapor deposition procedures reveals, after hydrogen detachment, the presence of the trivalent Si dangling-bond-type centers Pb0, Pb1 as prominent defects in all entities. This Pb0, Pb1 fingerprint, generally unique for the thermal (100)Si/SiO2 interface, indicates that the as-deposited (100)Si/metal oxides interface is basically Si/SiO2-like. Though sensitive to the deposition process, the Pb0 density is found to be substantially larger than in standard (100)Si/SiO2. As probed by the Pb- type center properties, the Si/dielectric interfaces of all structures are under enhanced (unrelaxed) stress, typical for low temperature Si/SiO2 growth. Standard quality thermal Si/SiO2 properties in terms of Pb signature may be approached by appropriate annealing (≥ 650°C) in vacuum in the case of (100)Si/SiOx/ZrO2. Yet, O2 ambient appears required for Si/Al2O3 and Si/HfO2. It appears that Si/high-κ metal oxide structures with device grade quality interfaces can be realized with sub-nm thin SiOx interlayers. The density of fast interface states closely matches the Pb0 density variations, suggesting the center as the dominant fast interface trap. They may be efficiently passivated in H2 at 400 °C.

Synthesis of diamond-like carbon films on Si substrates by photoemission-assisted plasma-enhanced chemical vapor deposition

2012 ◽  
Vol 523 ◽  
pp. 25-28 ◽  
Author(s):  
Meng Yang ◽  
Shuichi Ogawa ◽  
Susumu Takabayashi ◽  
Taiichi Otsuji ◽  
Yuji Takakuwa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Si Substrates

scholarly journals In-plane growth of large ultra-thin SnS2 nanosheets by tellurium-assisted chemical vapor deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (46) ◽  
pp. 29080-29087 ◽  
Author(s):  
Zhigang Wang ◽  
Fei Pang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrates

We successfully synthesized in-plane SnS2 NSs with sizes up to 280 μm on SiO2/Si substrates via Te-assisted CVD.

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