Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation

2012 ◽  
Vol 51 ◽  
pp. 028006 ◽  
Author(s):  
Masashi Kato ◽  
Yoshinori Matsushita ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima
2012 ◽  
Vol 51 (2R) ◽  
pp. 028006 ◽  
Author(s):  
Masashi Kato ◽  
Yoshinori Matsushita ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima

2016 ◽  
Vol 44 (1) ◽  
pp. 85-92 ◽  
Author(s):  
Chenyang Liu ◽  
Ying Zheng ◽  
Pei Yang ◽  
Xiaoquan Zheng ◽  
Ying Li ◽  
...  

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