Near Infrared Single Photon Detector Using an InGaAs/InP Avalanche Photodiode Operated with a Bipolar Gating Signal

2012 ◽  
Vol 51 ◽  
pp. 034401 ◽  
Author(s):  
Abdessattar Bouzid ◽  
Jun-Bum Park ◽  
Se Min Kim ◽  
Sung Moon
2010 ◽  
Vol 470 (20) ◽  
pp. 1534-1537 ◽  
Author(s):  
T. Seki ◽  
H. Shibata ◽  
H. Takesue ◽  
Y. Tokura ◽  
N. Imoto

2021 ◽  
Vol 8 (1) ◽  
Author(s):  
Elena Anisimova ◽  
Dmitri Nikulov ◽  
Simeng Simone Hu ◽  
Mark Bourgon ◽  
Sebastian Philipp Neumann ◽  
...  

AbstractWe build and test a single-photon detector based on a Si avalanche photodiode Excelitas 30902SH thermoelectrically cooled to −100∘C. Our detector has dark count rate below 1 Hz, $500\ \mu\mathrm{m}$ 500 μ m diameter photosensitive area, photon detection efficiency around 50%, afterpulsing less than 0.35%, and timing jitter under 1 ns. These characteristics make it suitable for long-distance free-space quantum communication links, which we briefly discuss. We also report an improved method that we call long-time afterpulsing analysis, used to determine and visualise long trap lifetimes at different temperatures.


2021 ◽  
Author(s):  
Petro Shpatar ◽  
Oleksandr Hres ◽  
Heorhii Rozorinov ◽  
Andrii Veryha

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