Analysis of Operation Mechanism of Field Effect Transistor Composed of Network of High-Quality Single Wall Carbon Nanotubes by Scanning Gate Microscopy

2012 ◽  
Vol 51 ◽  
pp. 04DN05 ◽  
Author(s):  
Xiaojun Wei ◽  
Nobuyuki Aoki ◽  
Tatsurou Yahagi ◽  
Kenji Maeda ◽  
Jonathan P. Bird ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Wall Carbon Nanotubes ◽  
High Quality ◽  
Single Wall Carbon ◽  
Operation Mechanism ◽  
Scanning Gate Microscopy ◽  
Scanning Gate ◽  
Effect Transistor

Ambipolar field-effect transistor on as-grown single-wall carbon nanotubes

2003 ◽  
Vol 14 (2) ◽  
pp. 327-331 ◽  
Author(s):  
Bakir Babi  ◽  
Mahdi Iqbal ◽  
Christian Sch nenberger
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Effect Transistor

A Method Study on Assembly of Single-Wall Carbon Nanotube Field Effect Transistor Using Dielectrophoresis

2010 ◽  
Vol 139-141 ◽  
pp. 1550-1553 ◽  
Author(s):  
Ke Xu ◽  
Cheng Dong Wu ◽  
Xiao Jun Tian ◽  
Ying Zhang ◽  
Zai Li Dong
Keyword(s):  
Carbon Nanotube ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Building Blocks ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Nanoscale Electronics ◽  
Experimental Parameters ◽  
Effect Transistor

Single-wall carbon nanotubes are candidates for a number of building blocks in nanoscale electronics. With respect to the assembly of carbon nanotube field effect transistor, the dielectrophoresis technology is adopted, which assembles SWCNTs between the micro-electrodes, SWCNTs are affected by the electrophoretic force which is carried out by the related theoretical analysis in a nonuniform electric field. The driving electric field of dielectrophoresis is simulated by the comsol software. According to the simulation results, a number of the experiments are done. It turns out that the required experimental parameters of the efficient assembly of SWCNT were obtained. AFM scanning and electrical properties of SWCNTs show that the method can achieve the effective assembly of carbon nanotube field effect transistor. SWCNTs are driven in the microelectrode gap, having a good arrangement of uniform orientation and assembly results, and proportional to the arrangement density along the electrode width direction and the duration of DEP. Meanwhile, it also provides an effective method of assembly and manufacture for other one-dimensional nanomaterials assembly of nanoelectronic devices.

High-Quality, Highly Concentrated Semiconducting Single-Wall Carbon Nanotubes for Use in Field Effect Transistors and Biosensors

ACS Nano ◽  
2013 ◽  
Vol 7 (8) ◽  
pp. 6831-6839 ◽  
Author(s):  
Wen-Shan Li ◽  
Peng-Xiang Hou ◽  
Chang Liu ◽  
Dong-Ming Sun ◽  
Jiangtan Yuan ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Wall Carbon Nanotubes ◽  
High Quality ◽  
Single Wall Carbon

scholarly journals High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

2011 ◽  
Vol 120 (6A) ◽  
pp. A-22-A-24 ◽  
Author(s):  
A. Taube ◽  
R. Kruszka ◽  
M. Borysiewicz ◽  
S. Gierałtowska ◽  
E. Kamińska ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
High Quality ◽  
Enhancement Mode ◽  
Mode Field ◽  
Effect Transistor
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