Investigation of the Low-Frequency Noise Behavior and Its Correlation with the Subgap Density of States and Bias-Induced Instabilities in Amorphous InGaZnO Thin-Film Transistors with Various Oxygen Flow Rates

2012 ◽  
Vol 51 ◽  
pp. 100206
Author(s):  
Chan-Yong Jeong ◽  
Ick-Joon Park ◽  
In-Tak Cho ◽  
Jong-Ho Lee ◽  
Euo-Sik Cho ◽  
...  
2013 ◽  
Vol 34 (11) ◽  
pp. 1403-1405 ◽  
Author(s):  
Andreas Tsormpatzoglou ◽  
Nikolaos A. Hastas ◽  
Forough Mahmoudabadi ◽  
Nackbong Choi ◽  
Miltiadis K. Hatalis ◽  
...  

2014 ◽  
Vol 3 (10) ◽  
pp. Q55-Q58 ◽  
Author(s):  
T. H. Chang ◽  
C. J. Chiu ◽  
S. J. Chang ◽  
T. H. Yang ◽  
S. L. Wu ◽  
...  

2015 ◽  
Vol 36 (12) ◽  
pp. 1332-1335 ◽  
Author(s):  
Chan-Yong Jeong ◽  
Jong In Kim ◽  
Jong-Ho Lee ◽  
Jae-Gwang Um ◽  
Jin Jang ◽  
...  

2011 ◽  
Vol 378-379 ◽  
pp. 642-645
Author(s):  
Kyunghwan Lee ◽  
Younghwan Son ◽  
Jaeho Lee ◽  
Jae Hong Lee ◽  
Seunghyun Jang ◽  
...  

Density of states in the channel bulk area of a-Si:H thin-film transistors (TFTs) was extracted by using low-frequency noise analysis. The drain current noise power spectral density shows 1/ƒγ behavior at relatively high frequencies (ƒ > 1 kHz), which is due to the exponential distribution of tail states. For the analysis, the modified number fluctuation model which is correlated with mobility fluctuation was used. From the relationship (γ=1- kT/Et ) between exponent γ and the slope of exponential distribution Et of band tail states, the distribution of the band tail near conduction band was extracted.


2010 ◽  
Vol 49 (10) ◽  
pp. 100205 ◽  
Author(s):  
Jae Chul Park ◽  
Sun Il Kim ◽  
Chang Jung Kim ◽  
Sungchul Kim ◽  
Dae Hwan Kim ◽  
...  

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park

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