(Invited) ALD Grown Functional Oxide Layers for Nonvolatile Resistive Switching Memory Applications

2013 ◽  
Vol 50 (4) ◽  
pp. 9-14
Author(s):  
S. Hoffmann-Eifert ◽  
M. Reiners ◽  
R. Waser
Keyword(s):  
Resistive Switching ◽  
Oxide Layers ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory

Hydrothermal synthesis of nanoporous lead selenide thin films: photoelectrochemical and resistive switching memory applications

2019 ◽  
Vol 30 (19) ◽  
pp. 17725-17734 ◽  
Author(s):  
Tejasvinee S. Bhat ◽  
Archana S. Kalekar ◽  
Dhanaji S. Dalavi ◽  
Chetan C. Revadekar ◽  
Atul C. Khot ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrothermal Synthesis ◽  
Resistive Switching ◽  
Lead Selenide ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850023 ◽  
Author(s):  
Pingping Zheng ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Shuangsuo Mao ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Ratio ◽  
Resistive Switching Memory ◽  
Non Volatile Memory ◽  
Doped Zno ◽  
Volatile Memory ◽  
Memory Applications ◽  
First Time ◽  
Switching Memory

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

Atomic Layer Deposition of TiOx/Al2O3Bilayer Structures for Resistive Switching Memory Applications

2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 282-290 ◽  
Author(s):  
Hehe Zhang ◽  
Nabeel Aslam ◽  
Marcel Reiners ◽  
Rainer Waser ◽  
Susanne Hoffmann-Eifert
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Memory Applications ◽  
Switching Memory

Ab initio study of ceria films for resistive switching memory applications

2017 ◽  
Vol 4 (10) ◽  
pp. 106301 ◽  
Author(s):  
Mehreen Firdos ◽  
Fayyaz Hussain ◽  
Muhammad Imran ◽  
Muhammad Ismail ◽  
A M Rana ◽  
...  
Keyword(s):  
Ab Initio ◽  
Resistive Switching ◽  
Ab Initio Study ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory

High-κ Al2O3/WOxBilayer Dielectrics for Low-Power Resistive Switching Memory Applications

2011 ◽  
Vol 50 (10S) ◽  
pp. 10PH01 ◽  
Author(s):  
Writam Banerjee ◽  
Sheikh Ziaur Rahaman ◽  
Amit Prakash ◽  
Siddheswar Maikap
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory
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