Hole-Proton Mixed Conduction of Perovskite-Oxide Thin Film with Oxygen Vacancies and Lattice Distortion for SOFC Electrode

An estimation method of the influence of interfaces on properties in perovskite-type oxide thin-film capacitors is presented. We proposed a modified Schottky model that can be employed to explain the electric properties of metal/perovskite-type oxide junctions. The modified model considers the electric field dependence of permittivity and the flow of electrons from metal to defect states located in the band gap of the perovskite oxide. The simulation based on this model could successfully describe the results of capacitance-voltage measurements of junctions between metals (Pt, Au, and Ag) and Nb-doped SrTiO3, which were not explained by the conventional Schottky model. Additionally, a simulation for a thin-film capacitor with hysteretic behavior could depict an asymmetric capacitance-voltage curve.

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Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors

Applied Physics Letters ◽

10.1063/1.4890579 ◽

2014 ◽

Vol 105 (2) ◽

pp. 023509 ◽

Cited By ~ 37

Author(s):

Li-Chih Liu ◽

Jen-Sue Chen ◽

Jiann-Shing Jeng

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxygen Vacancies ◽

Oxide Thin Film ◽

Solution Processed ◽

Stability Of Solution ◽

Zinc Tin Oxide

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Defect engineering in perovskite oxide thin films

Chemical Communications ◽

10.1039/d1cc02276h ◽

2021 ◽

Author(s):

Yunlong Sun ◽

Jack Yang ◽

Danyang Wang ◽

Sean Li

Keyword(s):

Thin Film ◽

Thin Films ◽

Perovskite Oxide ◽

Oxide Thin Film ◽

Multifunctional Materials ◽

Defect Engineering ◽

Oxide Thin Films ◽

Photovoltaic Properties ◽

Microelectronic Devices ◽

Perovskite Oxide Thin Films

Perovskite oxide thin film is a category of multifunctional materials that have intriguing electrical, magnetic, and photovoltaic properties that can be harnessed combinatorially in future microelectronic devices. However, the inevitable...

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Characterization of Crystalline Structure and Morphology of Ga2O3 Thin Film Grown by MOCVD Technique

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.721.253 ◽

2016 ◽

Vol 721 ◽

pp. 253-257

Author(s):

Alvars Kjapsna ◽

Lauris Dimitrocenko ◽

Ivars Tale ◽

Anatoly Trukhin ◽

Reinis Ignatans ◽

...

Keyword(s):

Thin Film ◽

Gallium Oxide ◽

Growth Process ◽

Oxygen Vacancies ◽

Oxide Thin Film ◽

Structure And Morphology ◽

Carrier Gases ◽

Compositional Properties ◽

Mocvd Technique

Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.

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Unpatterned Ferroelectric Thin Film Measurements for Optimization of Perovskite Oxide Thin Film Based Microwave Devices

Ferroelectrics ◽

10.1080/00150190600946229 ◽

2006 ◽

Vol 342 (1) ◽

pp. 83-88 ◽

Cited By ~ 1

Author(s):

M. W. Cole ◽

R. G. Geyer ◽

W. D. Nothwang

Keyword(s):

Thin Film ◽

Ferroelectric Thin Film ◽

Perovskite Oxide ◽

Oxide Thin Film ◽

Microwave Devices

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Perovskite Oxide Thin Film Heterostructures for IR Detector

International Journal of Modern Physics B ◽

10.1142/s0217979298002696 ◽

1998 ◽

Vol 12 (29n31) ◽

pp. 3381-3384

Author(s):

N. J. Wu ◽

A. Ignatiev ◽

Y. S. Chen

Keyword(s):

Thin Film ◽

Thin Films ◽

Infrared Detectors ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition ◽

Perovskite Oxide ◽

Oxide Thin Film ◽

Deposition Technique ◽

Ir Detector

Mn and Sb-doped PbZrTiO 3 (PMSZT) ferroelectric thin films were integrated to high-T c superconducting YB2Cu3O 7-x (YBCO) thin films on LaAlO 3 (100) and YSZ/Si (100) substrates by the pulsed laser deposition technique. The PZT/YBCO and PM-SZT/YBCO infrared detectors were fabricated and examined as to their photovoltage and photocurrent in response to IR source temperature, and IR wavelength. The detector has relatively high IR sensitivity with a detectivity of ~ 108 cm · Hz 1/2/ W in the wavelength range of 3–16 μm.

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