AbstractSmooth titanium silicide films have been deposited using a Low Pressure Chemical Vapor Deposition (LPCVD) process. A system has been designed and built for the LPCVD of titanium silicide. It is a cold wall reactor with the wafer being heated externally by infrared lamps. Sequential deposition of polycrystalline silicon (polysilicon) and titanium silicide films, and in-situ annealing of these films, if required, can be performed in this system. A turbomolecular pump is used to provide a contaminant free environment with a base pressure of <10−7 torr. SiH4 and TiCl4 are used as silicon and titanium sources, respectively.Tithnium silicide films with resistivities ranging from 22 to 39 μΩ-cm have been obtained. At low deposition rates, these films have surface roughnesses ranging from 50 to 250 Å. From X-ray diffractometry, it was determined that the as-deposited titanium silicide films were polycrystalline, and TiSi2 was the predominant phase. Si/Ti ratios of 1.8 to 2.3 were obtained frog Rutherford Backscattering Spectroscopy (RBS). Auger analyses did not show any impurities such as oxygen, carbon or chlorine in these films.