Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: I .

1992 ◽  
Vol 139 (3) ◽  
pp. 872-880 ◽  
Author(s):  
W. L. Warren ◽  
E. H. Poindexter ◽  
M. Offenberg ◽  
W. Müller‐Warmuth
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Amorphous Silicon Nitride ◽  
Amorphous Silicon Dioxide

scholarly journals Сравнительный фотолюминесцентный анализ точечных дефектов в SiO-=SUB=-2-=/SUB=-, индуцированных имплантацией ионов Ar-=SUP=-+-=/SUP=- и облучением нейтронами

2019 ◽  
Vol 45 (5) ◽  
pp. 24
Author(s):  
И.П. Щербаков ◽  
А.Е. Чмель
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Photoluminescence Spectrum ◽  
Thermal Neutrons ◽  
Optical Transitions ◽  
Atomic Collisions ◽  
Amorphous Silicon Dioxide ◽  
Spectral Bands ◽  
Atomic Nuclei

AbstractThe introduction of Si^+ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO_2 has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar^+ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).

Diffusion in Isotope Heterostructures Investigated by Neutron Reflectometry

2009 ◽  
Vol 289-292 ◽  
pp. 697-703 ◽  
Author(s):  
Erwin Hüger ◽  
Jochen Stahn ◽  
Udo Geckle ◽  
Michael Bruns ◽  
Harald Schmidt
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Model System ◽  
Neutron Reflectometry ◽  
Diffusion In Solids ◽  
Amorphous Silicon Nitride ◽  
Self Diffusion

Studies of self-diffusion in solids are presented, which are based on neutron reflectometry. For the application of this technique the samples under investigation are prepared in form of isotope heterostructures. These are nanometer sized thin films, which are chemically completely homogenous, but isotope modulated. Using this method, diffusion lengths in the order of 1 nm and below can be detected which allows to determine ultra low diffusivities in the order of 10-25 m2/s. For the model system amorphous silicon nitride we demonstrate how the structure of the isotope hetrostructures (triple layers or multilayers) influences the efficiency of diffusivity determination.

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

2011 ◽  
Vol 131 (7) ◽  
pp. 1305-1311 ◽  
Author(s):  
Mustafa Anutgan ◽  
Tamila (Aliyeva) Anutgan ◽  
Ismail Atilgan ◽  
Bayram Katircioglu
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Nitride ◽  
Hydrogenated Amorphous
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