Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD)

Vincent S. Chang; Y.T. Hou; P.F. Hsu; P.S. Lim; L.G. Yao; F.Y. Yen; C.L. Hung; H.J. Lin; J.C. Jiang; Y. Jin; C.C. Chen; H.J. Tao; S.C. Chen; S.M. Jang; Mong-Song Liang

doi:10.1149/1.2209336

Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD)

ECS Transactions ◽

10.1149/1.2209336 ◽

2019 ◽

Vol 1 (10) ◽

pp. 113-123 ◽

Cited By ~ 3

Author(s):

Vincent S. Chang ◽

Y.T. Hou ◽

P.F. Hsu ◽

P.S. Lim ◽

L.G. Yao ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Hafnium Silicate ◽

Layer Deposition

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Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD)

ECS Meeting Abstracts ◽

10.1149/ma2005-02/12/483 ◽

2005 ◽

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Hafnium Silicate ◽

Layer Deposition

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Electrical properties of 0.5 nm thick Hf-silicate top‐layer∕HfO2 gate dielectrics by atomic layer deposition

Applied Physics Letters ◽

10.1063/1.1941455 ◽

2005 ◽

Vol 86 (22) ◽

pp. 222904 ◽

Cited By ~ 20

Author(s):

Satoshi Kamiyama ◽

Takayoshi Miura ◽

Yasuo Nara ◽

Tsunetoshi Arikado

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Layer Deposition

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Atomic layer deposition of ZrO2as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Applied Physics Letters ◽

10.1063/1.4824445 ◽

2013 ◽

Vol 103 (14) ◽

pp. 142109 ◽

Cited By ~ 45

Author(s):

G. Ye ◽

H. Wang ◽

S. Arulkumaran ◽

G. I. Ng ◽

R. Hofstetter ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition

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PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF ULTRATHIN Ga2O3-TiO2 GATE DIELECTRICS ON Si (001) Substrates

Integrated Ferroelectrics ◽

10.1080/10584580500414200 ◽

2005 ◽

Vol 74 (1) ◽

pp. 181-187 ◽

Cited By ~ 4

Author(s):

NAK-JIN SEONG ◽

EUI-TAE KIM ◽

SOON-GIL YOON

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Layer Deposition

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Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

Journal of Applied Physics ◽

10.1063/1.2030407 ◽

2005 ◽

Vol 98 (5) ◽

pp. 054104 ◽

Cited By ~ 65

Author(s):

D. H. Triyoso ◽

R. I. Hegde ◽

S. Zollner ◽

M. E. Ramon ◽

S. Kalpat ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Titanium Addition ◽

Layer Deposition ◽

Film Characteristics

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Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process

Applied Physics Letters ◽

10.1063/1.1762977 ◽

2004 ◽

Vol 84 (25) ◽

pp. 5097-5099 ◽

Cited By ~ 12

Author(s):

Y. Xuan ◽

D. Hojo ◽

T. Yasuda

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Deposition Process ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hafnium Silicate ◽

Layer Deposition ◽

Metal Oxide Semiconductor Capacitor ◽

Deposition Mode

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Cited By ~ 12

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Batch process for atomic layer deposition of hafnium silicate thin films on 300-mm-diameter silicon substrates

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1887231 ◽

2005 ◽

Vol 23 (3) ◽

pp. L1-L3 ◽

Cited By ~ 12

Author(s):

Yoshi Okuyama ◽

Carl Barelli ◽

Christopher Tousseau ◽

Seung Park ◽

Yoshihide Senzaki

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Batch Process ◽

Silicon Substrates ◽

Hafnium Silicate ◽

Layer Deposition

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High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition

Applied Physics Letters ◽

10.1063/1.2188379 ◽

2006 ◽

Vol 88 (12) ◽

pp. 123509 ◽

Cited By ~ 231

Author(s):

P. F. Carcia ◽

R. S. McLean ◽

M. H. Reilly

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

High Performance ◽

Gate Dielectrics ◽

Atomic Layer ◽

Zno Thin Film ◽

Layer Deposition

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Electrical Properties of CeO$_{2}$/La$_{2}$O$_{3}$ Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.121101 ◽

2012 ◽

Vol 51 ◽

pp. 121101 ◽

Cited By ~ 1

Author(s):

Miyuki Kouda ◽

Takuya Suzuki ◽

Kuniyuki Kakushima ◽

Parhat Ahmet ◽

Hiroshi Iwai ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Atomic Layer Deposition ◽

Vapor Deposition ◽

Gate Dielectrics ◽

Chemical Vapor ◽

Atomic Layer ◽

Layer Deposition

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