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Application of Advanced Atomic Layer Deposition for Understanding and Control of VTH and EOT in Metal/High-k Gate Stacks
ECS Transactions
◽
10.1149/1.2979982
◽
2019
◽
Vol 16
(4)
◽
pp. 69-75
Author(s):
Akira Toriumi
◽
Toshihide Nabatame
◽
Hiroyuki Ota
Keyword(s):
Atomic Layer Deposition
◽
Atomic Layer
◽
Gate Stacks
◽
Layer Deposition
◽
High K
◽
And Control
Download Full-text
Related Documents
Cited By
References
Application of Advanced Atomic Layer Deposition for Understanding and Control of VTH and EOT in Metal/High-k Gate Stacks
ECS Meeting Abstracts
◽
10.1149/ma2008-02/24/1884
◽
2008
◽
Keyword(s):
Atomic Layer Deposition
◽
Atomic Layer
◽
Gate Stacks
◽
Layer Deposition
◽
High K
◽
And Control
Download Full-text
Oxygen-Terminated Si Surface for Atomic Layer Deposition and its Impact on Interfacial Electrical Quality of sub-nm-EOT high-k Gate Stacks
10.7567/ssdm.2009.b-2-3
◽
2009
◽
Author(s):
Y. Morita
◽
S. Migita
◽
N. Taoka
◽
W. Mizubayashi
◽
H. Ota
Keyword(s):
Atomic Layer Deposition
◽
Atomic Layer
◽
Gate Stacks
◽
Layer Deposition
◽
High K
Download Full-text
Atomic layer deposition-based interface engineering for high-k/metal gate stacks
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology
◽
10.1109/icsict.2012.6467643
◽
2012
◽
Cited By ~ 1
Author(s):
M. Ostling
◽
C. Henkel
◽
E. Dentoni Litta
◽
G. B. Malm
◽
P.-E. Hellstrom
◽
...
Keyword(s):
Atomic Layer Deposition
◽
Atomic Layer
◽
Interface Engineering
◽
Gate Stacks
◽
Metal Gate
◽
Layer Deposition
◽
High K
Download Full-text
Extremely Scaled Equivalent Oxide Thickness of High-k (k=40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Ti Cap Anneal
Hyomen Kagaku
◽
10.1380/jsssj.33.610
◽
2012
◽
Vol 33
(11)
◽
pp. 610-615
Author(s):
Yukinori MORITA
◽
Shinji MIGITA
◽
Wataru MIZUBAYASHI
◽
Hiroyuki OTA
Keyword(s):
Atomic Layer Deposition
◽
Atomic Layer
◽
Oxide Thickness
◽
Equivalent Oxide Thickness
◽
Gate Stacks
◽
Layer Deposition
◽
High K
Download Full-text
Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices
10.1063/1.2062940
◽
2005
◽
Cited By ~ 4
Author(s):
Yoshihide Senzaki
Keyword(s):
Atomic Layer Deposition
◽
Atomic Layer
◽
Gate Stacks
◽
Metal Gate
◽
Mos Devices
◽
Layer Deposition
◽
High K
◽
High K Dielectric
Download Full-text
Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks
Applied Physics Letters
◽
10.1063/1.3075609
◽
2009
◽
Vol 94
(5)
◽
pp. 053504
◽
Cited By ~ 32
Author(s):
D. Tsoutsou
◽
L. Lamagna
◽
S. N. Volkos
◽
A. Molle
◽
S. Baldovino
◽
...
Keyword(s):
Atomic Layer Deposition
◽
Atomic Layer
◽
Gate Stacks
◽
Layer Deposition
◽
High K
Download Full-text
Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
ECS Transactions
◽
10.1149/1.3485243
◽
2019
◽
Vol 33
(2)
◽
pp. 69-82
◽
Cited By ~ 5
Author(s):
Aileen O'Mahony
◽
Scott Monaghan
◽
Rosario Chiodo
◽
Ian Povey
◽
Karim Cherkaoui
◽
...
Keyword(s):
Atomic Layer Deposition
◽
Atomic Layer
◽
Gate Stacks
◽
Interface Control
◽
Layer Deposition
◽
High K
◽
Electrical Analysis
Download Full-text
Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks
Applied Physics Letters
◽
10.1063/1.3400213
◽
2010
◽
Vol 96
(18)
◽
pp. 182901
◽
Cited By ~ 30
Author(s):
C. Wiemer
◽
L. Lamagna
◽
S. Baldovino
◽
M. Perego
◽
S. Schamm-Chardon
◽
...
Keyword(s):
Dielectric Properties
◽
Atomic Layer Deposition
◽
Atomic Layer
◽
Gate Stacks
◽
Layer Deposition
◽
Er Doped
Download Full-text
Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor
Journal of Nanoscience and Nanotechnology
◽
10.1166/jnn.2015.8329
◽
2015
◽
Vol 15
(1)
◽
pp. 382-385
Author(s):
Jun Hee Cho
◽
Sang-Ick Lee
◽
Jong Hyun Kim
◽
Sang Jun Yim
◽
Hyung Soo Shin
◽
...
Keyword(s):
Atomic Layer Deposition
◽
Atomic Layer
◽
Gate Oxide
◽
Metal Gate
◽
Layer Deposition
◽
High K
Download Full-text
TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer
Electrochemical and Solid-State Letters
◽
10.1149/1.3559770
◽
2011
◽
Vol 14
(5)
◽
pp. G27
◽
Cited By ~ 12
Author(s):
Qi Xie
◽
Jan Musschoot
◽
Marc Schaekers
◽
Matty Caymax
◽
Annelies Delabie
◽
...
Keyword(s):
Atomic Layer Deposition
◽
Metal Oxide
◽
Semiconductor Devices
◽
Atomic Layer
◽
Metal Oxide Semiconductor
◽
Passivation Layer
◽
Oxide Semiconductor
◽
Gate Stacks
◽
Layer Deposition
Download Full-text
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