Fabrication of Zinc Oxide Resistive Random-Access Memory on a Flexible Substrate with Different Thicknesses

2021 ◽  
Author(s):  
Mei-Hui Tsai ◽  
Hsin-Chiang You ◽  
Yuan-Nan Tsai ◽  
Cheng-Yen Wu ◽  
Hong-Kai Wu
Keyword(s):  
Zinc Oxide ◽  
Flexible Substrate ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Low switching-threshold-voltage zinc oxide nanowire array resistive random access memory

2016 ◽  
Vol 618 ◽  
pp. 90-94 ◽  
Author(s):  
Guan-Hung Shen ◽  
Andrew Ronaldi Tandio ◽  
Mei-Yu Lin ◽  
Gao-Feng Lin ◽  
Kai-Huang Chen ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Threshold Voltage ◽  
Nanowire Array ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Threshold ◽  
Zinc Oxide Nanowire ◽  
Switching Threshold Voltage

Amorphous ZnO based resistive random access memory

RSC Advances ◽  
2016 ◽  
Vol 6 (22) ◽  
pp. 17867-17872 ◽  
Author(s):  
Yong Huang ◽  
Zihan Shen ◽  
Ye Wu ◽  
Xiaoqiu Wang ◽  
Shufang Zhang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Characteristics

Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated.

scholarly journals Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

2015 ◽  
Vol 51 (44) ◽  
pp. 9173-9176 ◽  
Author(s):  
Sung Pyo Park ◽  
Doo Hyun Yoon ◽  
Young Jun Tak ◽  
Heesoo Lee ◽  
Hyun Jae Kim
Keyword(s):  
Phase Transition ◽  
Hydrogen Peroxide ◽  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Switching Characteristics

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnOx) resistive random access memory (RRAM) devices using hydrogen peroxide.

Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

2020 ◽  
Vol 41 (3) ◽  
pp. 357-360 ◽  
Author(s):  
Pei-Yu Wu ◽  
Hao-Xuan Zheng ◽  
Chih-Cheng Shih ◽  
Ting-Chang Chang ◽  
Wei-Jang Chen ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Characteristics

scholarly journals Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory

Nanomaterials ◽  
2016 ◽  
Vol 6 (1) ◽  
pp. 16 ◽  
Author(s):  
Yunfeng Lai ◽  
Wenbiao Qiu ◽  
Zecun Zeng ◽  
Shuying Cheng ◽  
Jinling Yu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Zinc Oxide Nanowires ◽  
Access Memory ◽  
Oxide Nanowires

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature
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