A Comparison of O3 and H2O as Oxygen Sources for Atomic Layer Deposition Processing of HfAlOx Thin Films for High-k Dielectric Nanocapacitor Applications

2010 ◽  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

Atomic Layer Deposition of Rare-earth Oxide Thin Films for High-k Dielectric Applications

2019 ◽  
Vol 19 (2) ◽  
pp. 525-536 ◽  
Author(s):  
Nathan A. Stafford ◽  
Rajesh Katamreddy ◽  
Laurie Guerin ◽  
Ben Feist ◽  
Christian Dussarrat ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Atomic Layer Deposition ◽  
Rare Earth Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

High-k ZrO2 dielectric thin films on GaAs semiconductor with reduced regrowth of native oxides by atomic layer deposition

2013 ◽  
Vol 583 ◽  
pp. 74-79 ◽  
Author(s):  
R.B. Konda ◽  
C. White ◽  
J. Smak ◽  
R. Mundle ◽  
M. Bahoura ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dielectric Thin Films ◽  
Native Oxides ◽  
Layer Deposition ◽  
High K

scholarly journals Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1085 ◽  
Author(s):  
Kemelbay ◽  
Tikhonov ◽  
Aloni ◽  
Kuykendall
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Ambient Conditions ◽  
Nucleation Layer ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

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