Effect of Design and Rare-Earth Doping of the Structural, Optical, Electrical and Light Emitting Properties of Si-Based Superlattices Developed for Photonic Application

Abstract:Ultraviolet light-emitting diodes (UVLEDs) with phosphor materials have considerable advantages over traditional illumination devices. Doping with rare earth ions can modify the optical spectrum of phosphor materials, but rare earths are very expensive. Thus, replacing rare earths with a common material would provide a great potential for the wide application in the future. In this study, we discovered that a novel type of semiconductor nanometre powder, namely manganese cobalt nickel copper oxide (MCNC), is able to emit blue-green wavelength spectrum when exited by 365-400nmUVLED. In addition, MCNC shows less attenuation of luminescence efficiency than other UVLED phosphor materials doped with rare earths with temperature increase. It is thus concluded that MCNC is a promising low-cost material to replace rare earths to adjust the optical spectrum wavelength of UVLED. This is the first time that nano-scale MCNC is reported to possess the property to change the optical spectrum wavelength of UVLED. This provides a new mechanical and nanometer phosphor material without rare earth doping to shift the wavelength spectrum.

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Rare-Earth Doping in SiC for Light-Emitting Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.6566 ◽

1996 ◽

Vol 35 (Part 1, No. 12B) ◽

pp. 6566-6569 ◽

Cited By ~ 6

Author(s):

Walter Pietsch ◽

Takeo Aramaki ◽

Teruaki Motooka

Keyword(s):

Rare Earth ◽

Rare Earth Doping ◽

Light Emitting ◽

Light Emitting Devices

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Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO2 Layers

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.131-133.595 ◽

2007 ◽

Vol 131-133 ◽

pp. 595-600

Author(s):

S. Prucnal ◽

L. Rebohle ◽

Wolfgang Skorupa

Keyword(s):

Rare Earth ◽

Light Emitting Diode ◽

Operating Time ◽

Impact Excitation ◽

Electron Impact Excitation ◽

Hot Electron ◽

Light Emitting ◽

Hot Electron Injection ◽

Quenching Process ◽

Quenching Mechanisms

The temperature quenching mechanisms of the electroluminescence (EL) and the reactivation of the rare earth luminescent centres by the flash lamp annealing (FLA) made after hot electron injection into the SiO2 layer implanted by Tb and Gd was investigated. An increase of the temperature from room temperature up to 150oC reduces the gate voltage of about 3 V and increases the rate of the EL quenching process and the degradation of the Metal-Oxide-Silicon Light Emitting Diode (MOSLED) structure by a of factor of three. On the other hand, the post-injection FLA reactivates the RE centres switched off by electrons trapped around them during hot electron impact excitation, increasing the operating time of the MOSLEDs devices.

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Rare Earth Ion Implantation for Silicon Based Light Emission

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.108-109.755 ◽

2005 ◽

Vol 108-109 ◽

pp. 755-760 ◽

Cited By ~ 7

Author(s):

Wolfgang Skorupa ◽

J.M. Sun ◽

S. Prucnal ◽

L. Rebohle ◽

T. Gebel ◽

...

Keyword(s):

Rare Earth ◽

Ion Implantation ◽

Indium Tin Oxide ◽

Light Emission ◽

Charge Trapping ◽

Electrical Performance ◽

Rare Earth Ion ◽

Light Emitting ◽

Silicon Based ◽

Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

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Erbium Tris(Amide) Compounds as Source Molecules FOR Rare Earth Doping of Semiconducting Materials

MRS Proceedings ◽

10.1557/proc-415-111 ◽

1995 ◽

Vol 415 ◽

Cited By ~ 1

Author(s):

Oliver Just ◽

Anton C. Greenwald ◽

William S. Rees

Keyword(s):

Rare Earth ◽

Solid State ◽

Earth Element ◽

Optoelectronic Devices ◽

Analytical Techniques ◽

Optically Active ◽

Rare Earth Doping ◽

Semiconducting Materials ◽

Host Materials ◽

Erbium Doped

ABSTRACTThe homoleptic compound erbium{tris[bis (trimethylsilyl)]amide} displays high doping ability for incorporation of the rare earth element into epitaxially grown semiconducting host materials for fabrication of temperature-independent, monochromatic solid state optoelectronic devices. Electronic characteristics derived from erbium doped semiconducting films have been obtained. Several more volatile and lower melting representatives of this class of compounds have been synthesized, characterized by various analytical techniques and examined for their suitability to incorporate optically-active erbium centers into a semiconducting environment.

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