scholarly journals FinFET Based Tunable Analog Circuit: Design and Analysis at 45 nm Technology

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Ravindra Singh Kushwah ◽  
Shyam Akashe

We included a designing of low power tunable analog circuits built using independently driven FinFETs devices, where the controlling of the back gate provide the output on the front gate. We show that this could be an effective solution to conveniently tune the output of bulk CMOS analog circuits particularly for Schmitt trigger and operational transconductance amplifier circuits. FinFET devices can be used to increase the performance by reducing the leakage current and power dissipation, because front and back gates both are independently controlled. FinFET device has a higher controllability, resulting relatively high Ion/Ioff ratio. In this paper, we proposed a tunable analog circuit such as CMOS amplifier circuit, Schmitt trigger circuit, and operational transconductance amplifier circuit, these circuit blocks are necessary for low noise high performance ICs for analog applications. Gain, phase, group delay, and output response of analog tunable circuits have been discussed in this paper. The proposed FinFET based analog tunable circuits have been designed using Cadence Virtuoso tool at 45 nm.

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000083-000088
Author(s):  
C. Su ◽  
B. J. Blalock ◽  
S. K. Islam ◽  
L. Zuo ◽  
L. M. Tolbert

The rapid growth of the hybrid electric vehicles (HEVs) has been driving the demand of high temperature automotive electronics target for the engine compartment, power train, and brakes where the ambient temperature normally exceeds 150°C. An operational transconductance amplifier (OTA) is an essential building block of various analog circuits such as data converters, instrumentation systems, linear regulators, etc. This work presents a high temperature folded cascode operational transconductance amplifier designed and fabricated in a commercially available 0.8-μm BCD-on-SOI process. SOI processes offer several orders of magnitude smaller junction leakage current than bulk-CMOS processes at temperatures beyond 150°C. This amplifier is designed for a high temperature linear voltage regulator; the higher open-loop gain of this amplifier will enhance the overall performance of a linear regulator. In addition, the lower current consumption of the OTA is critical for improving the current efficiency of the linear regulator and reducing the power dissipation at elevated temperature. A PMOS input pair folded cascode OTA topology had been selected in this work, PMOS input pair offers wider ICMR (input common-mode range) and empirically lower flicker noise compared to its NMOS counterpart. By cascoding current mirror load at the output node, the folded cascode OTA obtains higher voltage gain than the symmetrical OTA topology. The PSRR (power supply rejection ratio) is also improved. A on-chip temperature stable current reference is employed to bias the amplifier. The amplifier consumes less than 65μA bias current at 175°C. The core layout area of the amplifier is 0.16mm2 (400 μm × 400 μm).


A vast number of diverse analog circuit blocks have been arosed in the past few decades. A various active devices are Operational Amplifier (Op-Amp), Current Conveyor (CC), Operational Transconductance Amplifier (OTA), Differential Difference Current Conveyor (DDCC), Differential Difference Current Conveyor Transconductnace Amplifier (DDCCTA), Z-Copy Current Differencing Transconductance Amplifier (ZC-CDTA), Voltage Difference Transconductance Amplifier (VDTA) and so on. A review on Schmitt trigger circuits by using different active devices are presented in this paper since Schmitt trigger circuits are widely used in numerous applications such as in waveform generators, wave-shaping circuits, comparators, Bio-medical applications, analog processing systems, communication and instrumentation systems.


1995 ◽  
Vol 391 ◽  
Author(s):  
Rajeeva Lahri ◽  
Hung-Sheng Chen ◽  
Ji Zhao ◽  
Kamesh Gadepally ◽  
C.S. Teng

AbstractIn a Mixed-Signal IC, both digital and analog circuits exist on the same chip. Analog circuit blocks require technology attributes like precise device matching, low parametric drifts and low noise. These requirements raise additional reliability issues, over and above the reliability concerns associated with digital circuits. CMOS device reliability for mixed-signal technologies can be enhanced by modifying device architecture and improving gate oxide integrity. Interconnect metallurgy plays an important role in determining electromigration related contact/via resistance change which may impact matching of devices and resistor pairs. Appropriate source/drain engineering, device design and utilizing nitrided gate oxide has been shown to produce extremely stable devices. This article will cover process architecture and material issues related with device stability and interconnect metallurgy issues related with contact/via stability, especially with W-Plugs.


Author(s):  
P. John Paul ◽  
Raj N

In this paper, non-conventional circuit design techniques has been reviewed. The techniques discussed are widely used for realizing low voltage low power analog circuits. The discussed techniques in this paper are: Bulk Driven, Floating and Quasi-floating Gate followed by operating of Bulk Driven MOSFET in Floating and Quasi-floating Gate mode. In all the approach, the threshold voltage restriction is removed or reduced from the input signal path thereby reducing the power consumption. However, the adverse effect lies is terms of reduced performance parameters of MOSFET compared to conventional gate driven MOSFET parameters as shown in this paper through simulation results. The comparative analysis of MOSFET parameters results in encouragement of two approaches: Quasi-floating Gate and Bulk Driven Quasi-floating Gate MOSFET. Each of these approaches has its advantage in specific domains. Further in this paper, an Operational Transconductance Amplifier is proposed which use the Bulk Driven Quasi-floating Gate MOSFET technique and the same is amplifier under similar conditions is also realized using Bulk Driven MOSFET so as to highlight the advantage of Bulk Driven  Quasi-floating Gate MOSFET over Bulk Driven MOSFET. All the performances metrics are achieved with the help of HSpice simulator using MOSFET models of 180nm technology provided by UMC.


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