Spin Waves in Magnetic Metal-Insulator Hybrid Nanostructures

2019 ◽  
pp. 105-120
Author(s):  
Chuanpu Liu ◽  
Jilei Chen ◽  
Haiming Yu
Keyword(s):  
Spin Waves ◽  
Hybrid Nanostructures ◽  
Metal Insulator ◽  
Magnetic Metal

scholarly journals Strong Interlayer Magnon-Magnon Coupling in Magnetic Metal-Insulator Hybrid Nanostructures

2018 ◽  
Vol 120 (21) ◽  
Author(s):  
Jilei Chen ◽  
Chuanpu Liu ◽  
Tao Liu ◽  
Yang Xiao ◽  
Ke Xia ◽  
...  
Keyword(s):  
Hybrid Nanostructures ◽  
Metal Insulator ◽  
Magnetic Metal

scholarly journals Robust antiferromagnetic spin waves across the metal-insulator transition in hole-doped BaMn2As2

2017 ◽  
Vol 95 (22) ◽  
Author(s):  
M. Ramazanoglu ◽  
A. Sapkota ◽  
Abhishek Pandey ◽  
J. Lamsal ◽  
D. L. Abernathy ◽  
...  
Keyword(s):  
Spin Waves ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Antiferromagnetic Spin

scholarly journals Manipulation of Coupling and Magnon Transport in Magnetic Metal-Insulator Hybrid Structures

2020 ◽  
Vol 13 (6) ◽  
Author(s):  
Yabin Fan ◽  
P. Quarterman ◽  
Joseph Finley ◽  
Jiahao Han ◽  
Pengxiang Zhang ◽  
...  
Keyword(s):  
Hybrid Structures ◽  
Metal Insulator ◽  
Magnetic Metal

Hrem Characterization of Magnetic Tunnel Junctions and Discontinuous Multilayers

1998 ◽  
Vol 4 (S2) ◽  
pp. 798-799
Author(s):  
David J. Smith ◽  
Fuding Ge ◽  
C.L. Piatt ◽  
S. Sankar ◽  
A.E. Berkowitz
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Cross Sectional ◽  
Metal Insulator ◽  
Magnetic Layers ◽  
Magnetic Metal ◽  
Oxide Barrier ◽  
Metal Layers

There is much current interest in the magnetotransport properties of systems consisting of two (or more) magnetic metal layers separated by thin insulating layers. Traditional magnetic tunnel junctions (MTJs) are comprised of simple ferromagnet-insulator-ferromagnet trilayer structures and the conductance depends on the relative alignments of the magnetizations in the two ferromagnets. In the case of discontinuous metal/insulator multilayers, negative magnetoresistance (MR) results from spindependent tunneling. In both types of systems, the tunneling phenomena are strongly influenced by the microstructure of the films, particularly the metal/insulator interfaces and the nature and uniformity of the thin oxide barrier layers. In this study, we have used cross-sectional HREM to characterize a variety of magnetic tunnel junctions and discontinuous multilayers.The MTJs were prepared by rf and dc magnetron sputtering onto thermally oxidized (100) silicon wafers at room temperature. The magnetic layers consisted of thin films of Co, Fe and/or CoFe alloys with thicknesses ∼ 30-50nm, and the barriers included MgO, HfO2, CoO, SiO2 as well as Al2O3 (thicknesses in the range 2-10nm).

Sign in / Sign up

Export Citation Format

Share Document