Temperature-Stable 25-Gbps Direct-Modulation in 1.3-μm InAs/GaAs Quantum Dot Lasers

2012 ◽  
Author(s):  
Mitsuru Ishida ◽  
Manabu Matsuda ◽  
Yu Tanaka ◽  
Kan Takada ◽  
Mitsuru Ekawa ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Direct Modulation ◽  
Gaas Quantum Dot

scholarly journals Sub‐1100 nm lasing from post‐growth intermixed InAs/GaAs quantum‐dot lasers

2015 ◽  
Vol 51 (18) ◽  
pp. 1444-1445 ◽  
Author(s):  
H.H. Alhashim ◽  
M.Z.M. Khan ◽  
M.A. Majid ◽  
T.K. Ng ◽  
B.S. Ooi
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

scholarly journals Optimisation of 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates

2015 ◽  
Vol 619 ◽  
pp. 012011 ◽  
Author(s):  
Mingchu Tang ◽  
Siming Chen ◽  
Jiang Wu ◽  
Qi Jiang ◽  
Dongyoung Kim ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Si Substrates ◽  
Gaas Quantum Dot

Doping effect on two-state lasing in 1.3µm InAs/GaAs quantum dot lasers

2010 ◽  
Author(s):  
Rui Wang ◽  
Soon Fatt Yoon ◽  
Han Xue Zhao ◽  
Cun Zhu Tong ◽  
Chong Yang Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Doping Effect ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates

2013 ◽  
Vol 19 (4) ◽  
pp. 1901107-1901107 ◽  
Author(s):  
A. D. Lee ◽  
Qi Jiang ◽  
Mingchu Tang ◽  
Yunyan Zhang ◽  
A. J. Seeds ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Si Substrates ◽  
Gaas Quantum Dot

Optimization of 1.3 µm InAs/GaAs quantum dot lasers epitaxially grown on silicon: taking the optical loss of metamorphic epilayers into account

Laser Physics ◽  
2018 ◽  
Vol 28 (12) ◽  
pp. 126206
Author(s):  
Jun Wang ◽  
Yiming Bai ◽  
Huiyun Liu ◽  
Zhuo Cheng ◽  
Mingchu Tang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Loss ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot
Sign in / Sign up

Export Citation Format

Share Document