Ion-beam etching technology in the production of optical elements

2002 ◽  
Vol 69 (9) ◽  
pp. 685 ◽  
Author(s):  
V. Yu. Guzhov
Keyword(s):  
Ion Beam ◽  
Optical Elements ◽  
Ion Beam Etching

Ion beam etching of large aperture diffractive optical elements

2012 ◽  
Vol 20 (8) ◽  
pp. 1676-1683
Author(s):  
邱克强 QIU Ke-qiang ◽  
周小为 ZHOU Xiao-wei ◽  
刘颖 LIU Ying ◽  
徐向东 XU Xiang-dong ◽  
刘正坤 LIU Zheng-kun ◽  
...  
Keyword(s):  
Ion Beam ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Ion Beam Etching ◽  
Large Aperture

Binary Optics Microlens Arrays in CdTe.

1990 ◽  
Vol 216 ◽  
Author(s):  
M.B. Stem ◽  
W.F. Delaney ◽  
M. Holz ◽  
K.P. Kunz ◽  
K.R. Maschhoff ◽  
...  
Keyword(s):  
Focal Plane ◽  
Ion Beam ◽  
Spot Size ◽  
Detector Plane ◽  
Optical Elements ◽  
Microlens Arrays ◽  
Ion Beam Etching ◽  
Binary Optics ◽  
Infrared Materials ◽  
First Time

ABSTRACTArrays of miniature focusing optics located at the focal plane can improve the performance of focal plane systems. By more completely collecting the light at the focal plane and concentrating it into a smaller spot size on the detector plane, the photodetector area can be substantially reduced. Increased gamma radiation hardening and noise reduction result from the decrease in photodetector surface area. Binary optics technology, a process for fabricating large arrays of diffractive optical elements, is especially attractive for infrared materials. In this paper, diffractive Fresnel microlens arrays containing over six thousand F/0.9 lenslets are patterned in the surface of CdTe substrates by successive photolithographic and Ar+ ion-beam-etching steps. Results on smaller arrays of monolithically integrated binary-optics lenslets with II-VI detectors, demonstrating enhanced photodetector responsivities, are presented for the first time.

Precision aspherization of the surface of optical elements by ion-beam etching

2015 ◽  
Vol 9 (4) ◽  
pp. 765-770 ◽  
Author(s):  
M. V. Zorina ◽  
I. M. Nefedov ◽  
A. E. Pestov ◽  
N. N. Salashchenko ◽  
S. A. Churin ◽  
...  
Keyword(s):  
Ion Beam ◽  
Optical Elements ◽  
Ion Beam Etching

Enhancement of RIE: etched Diffractive Optical Elements surfaces by using Ion Beam Etching

2015 ◽  
Author(s):  
J. Schmitt ◽  
Ch. Bischoff ◽  
U. Rädel ◽  
M. Grau ◽  
U. Wallrabe ◽  
...  
Keyword(s):  
Ion Beam ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Ion Beam Etching

Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

1975 ◽  
Vol 33 ◽  
pp. 358-359
Author(s):  
M. Spector ◽  
A. C. Brown
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ectodermal Dysplasia ◽  
Ion Beam ◽  
Freeze Fracture ◽  
Ion Current ◽  
Ion Beam Etching ◽  
Pili Torti ◽  
Argon Ion ◽  
Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

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