Knight Shift in the V3Ga Compound at High Temperatures

1984 ◽  
Vol 39 (2) ◽  
pp. 201-202
Author(s):  
R. Rünger ◽  
D. Ploumbidis

The temperature dependence of the Knight shift of both 51V and 71Ga in the V3Ga compound has been measured over the entire range from 300 K to 1300 K. The results are discussed using a model based on the assumption that the core polarization contribution to the total Knight shift is the temperature dependent term.

1984 ◽  
Vol 39 (2) ◽  
pp. 145-147
Author(s):  
R. Rünger ◽  
D. Ploumbidis

Measurements of both the 51V and 195Pt Knight shift in the V3Pt compound are reported for temperatures ranging from 300 K to about 1300 K. The temperature coefficients of the Knight shift and the NMR linewidth have been determined. An interpretation of the observations is given in the frame of a model which is based on the temperature dependence of the core polarization contribution to the total Knight shift.


1979 ◽  
Vol 34 (4) ◽  
pp. 523-524 ◽  
Author(s):  
R. Krieger ◽  
J. Voitländer

The direct and core-polarization contributions to the Knight shift in palladium metal have been calculated taking an enhancement factor of 10 for d- and 1.28 for s-electrons. We found a large negative contribution of - 3.88% for the core electrons and a comparatively small direct contribution of 0.18% for s-electrons on the Fermi surface. Together with an estimated contribution of 0.36% for conduction electrons in s-orbitals, but not on the Fermi surface, the calculated total amount of - 3.34% is in good agreement with the experimental value of - 4% obtained by the Jaccarino plot for palladium at 0 K


1982 ◽  
Vol 37 (11) ◽  
pp. 1235-1240
Author(s):  
G. Fritsch ◽  
J. Wilier ◽  
E. Lüscher

Using the Ziman-formulation a model is derived which describes the pressure dependence of the electrical resistivity of d-electron amorphous alloys. It is shown how the volume dependence of the scattering-potential, electron-gas-properties and the Grüneisenparameter determine the P-dependence of a constant and a temperature dependent term in the resistivity. The absolute value of the resistivity is discussed.


1966 ◽  
Vol 141 (2) ◽  
pp. 603-615 ◽  
Author(s):  
Wei-Mei Shyu ◽  
G. D. Gaspari ◽  
T. P. Das

1973 ◽  
Vol 51 (21) ◽  
pp. 2275-2282 ◽  
Author(s):  
A. M. Jopko ◽  
Donald W. L. Sprung

A numerical calculation of the core polarization of the effective interaction between nucléons outside the 40Ca closed shell has been carried out, taking account of several higher order processes suggested by Kirson. These are a systematic inclusion of particle–hole scattering, self-screening of phonons, and modification of the one-particle to two-particle, one-hole vertex. These processes have the same effect as in the earlier calculation for 16O; namely, the final result is a very small net core polarization contribution to the effective interaction, which cannot explain the low-lying spectra.


1986 ◽  
Vol 41 (1-2) ◽  
pp. 171-174 ◽  
Author(s):  
M. Frank ◽  
F. Gubitz ◽  
W. Ittner ◽  
W. Kreische ◽  
A. Labahn ◽  
...  

The 19F quadrupole coupling constants in CF4, CHF3, CClF3 and CHClF2 are reported. The measurements were carried out temperature dependent using the time differential perturbed angular distribution method (TDPAD). The temperature dependence can be satisfactorily described in the framework of the Bayer-Kushida theory. A simple model is used to explain the appearance of H-F and Cl-F coupling constants in CHF3/CHClF2 and CClF3, respectively.


2001 ◽  
Vol 679 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Oded Rabin ◽  
Marcie R. Black ◽  
Gene Dresselhaus ◽  
...  

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.


1987 ◽  
Vol 65 (4) ◽  
pp. 395-402 ◽  
Author(s):  
R. Manka ◽  
J. Sladkowski

The variational approach to the Glashow–Weinberg–Salam model, based on canonical quantization, is presented. It is shown that taking into consideration the Becchi–Rouet–Stora symmetry leads to the correct, temperature-dependent, effective potential. This generalization of the Weinberg–Coleman potential leads to a phase transition of the first kind.


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