High-Growth-Rate Chemical Vapor Deposition of Silicon: an Experimental and Modeling Approach

2005 ◽  
Vol 219 (5-2005) ◽  
pp. 649-664 ◽  
Author(s):  
Burak Atakan ◽  
Michael Hofstätter ◽  
Katharina Kohse-Höinghaus
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
Modeling Approach

Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

2004 ◽  
Vol 43 (No. 7B) ◽  
pp. L969-L971 ◽  
Author(s):  
Katsunori Danno ◽  
Koichi Hashimoto ◽  
Hiroaki Saitoh ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
Low Concentration ◽  
Deep Traps

Nitrogen and Bias Effect on Homoepitaxial Diamond Growth by Hot-Filament Chemical Vapor Deposition

2010 ◽  
Vol 443 ◽  
pp. 510-515 ◽  
Author(s):  
Hung Yin Tsai ◽  
Chih Cheng Chang ◽  
Chih Wei Wu
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Hot Filament

The development of homoepitaxial films for advanced device applications has been studied, but high growth rate and diamond film quality have not yet been explored. In the current study, high quality homoepitaxial diamond films were grown on type Ib (100) HPHT synthetic diamond substrate by hot-filament chemical vapor deposition. The reactant gases were mixed by CH4 and H2 with small amounts of N2 (500 to 3000 ppm). Besides, a bias system was used to assist diamond film deposition. The pyramidal crystals on diamond surface can be suppressed and high quality diamond film of FWHM (Full Width at Half Maximum) = 10.76 cm-1 with high growth rate of 8.78 ± 0.2 μm/ hr was obtained at the condition of adding 1000 ppm nitrogen. At the bias voltage of -150 V, the pyramidal crystals can also be suppressed and high quality diamond film of FWHM = 10.19 cm-1 was obtained. With nitrogen addition above 2000 ppm, diamond film was partly doped and some sp2 structures appeared. These homoepitaxial diamond films were characterized by optical microscopy and micro-Raman spectroscopy.

Modeling of Halide Chemical Vapor Deposition of SiC

2006 ◽  
Author(s):  
Rong Wang ◽  
Ronghui Ma ◽  
Govindhan Dhanaraj ◽  
Yi Chen ◽  
Michael Dudley
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transport Model ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
Gaseous Species ◽  
Gas Field

Halide chemical vapor deposition is used to grow thick SiC epilayers at high growth rate. In this paper we present simulation of HCVD process in a horizontal hot wall reactor. A reaction mechanism for Si-C-Cl-H system is proposed for deposition of SiC using SiCl4/C3H8/H2 mixture. A model for transport of momentum and energy is developed to determine the gas field velocity and temperature distribution. Chemical reactions in the gas phase and on the substrate surface are incorporated into the transport model for predicting gas species transport and deposition. The effects of graphite etching are also accounted for in the model. Numerical simulation is performed to predict growth rate of the film as a function of temperature and gaseous species flow rates.

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