Optical Properties of Thin Films of Haycockite

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2023-2033
Author(s):  
Barys Korzun ◽  
Marin Rusu ◽  
Thomas Dittrich ◽  
Anatoly Galyas ◽  
Andrey Gavrilenko
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Composition ◽  
Energy Band ◽  
Surface Photovoltage ◽  
Second Phase ◽  
Energy Band Gap ◽  
Flash Evaporation ◽  
Glass Substrates ◽  
Evaporation Technique

ABSTRACTThin films of haycockite Cu4Fe5S8 on glass substrates were deposited by flash evaporation technique from powders of this compound. The composition of thin films correspond to the atomic content of Cu, Fe, and S of 24.13, 27.90, and 47.97 at.% with the Cu/ Fe and S/ (Cu + Fe) atomic ratios of 0.87 and 0.92 respectively, whereas the corresponding theoretical values for this material amount to 0.80 and 0.89. The as-prepared thin films of haycockite consist of a set of separate fractions of approximately identical areas of about 400 - 600 μm2. It can be assumed that this structure evolved during cooling down of thin films since it completely covers the surface of thin films. A small inclusion of a second phase with the chemical composition close to talnakhite Cu9Fe8S16 is also observed. Haycockite Cu4Fe5S8 is found to be a direct gap semiconductor with the energy band gap Eg equal to 1.26 eV as determined using both transmission and surface photovoltage methods.

Structural and optical properties of Sn1−xFexO2 thin films prepared by flash evaporation technique

2014 ◽  
Author(s):  
M. Kuppan ◽  
S. Kaleemulla ◽  
N. Madhusudhana Rao ◽  
N. Sai Krishna ◽  
M. Rigana Begam
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Flash Evaporation ◽  
Structural And Optical Properties ◽  
Evaporation Technique

Structural and electrical study of BLT thin film deposited on different substrates by electron gun evaporation

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
B. Abdallah ◽  
F. Nasrallah ◽  
W. Tabbky
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Ferroelectric Properties ◽  
Electron Gun ◽  
High Deposition Rate ◽  
Content Type ◽  
Glass Substrates ◽  
Evaporation Technique

Purpose The purpose of this study was to deposit Bi4Ti3O12 films by electron gun evaporation technique starting from Bi3.25La0.75Ti3O12 as a target without annealing. The films have been deposited on Si(100), on thin film buffer layer of Pt and glass substrates. X-ray diffraction (XRD) was used to analyze structure of the films, which possesses a good structure with (0010) preferred orientation. Electronic behavior of the samples has been studied. Design/methodology/approach The dependence of both the structure and quality of the BLT thin films on different substrates is studied using XRD. The electrical characteristics were determined using capacitance–voltage (C–V) and current–voltage (I–V) measurements at the frequency of 1 MHz. Optical properties of the grown films deposited on glass substrates were characterized by optical transmittance measurements (UV-Vis). Findings The XRD analysis approved the crystallographer structure of the prepared Bi4Ti3O12 films. The optical properties of deposited film (transmittance and the band gap value) are extracted by UV-Vis spectrum. Originality/value High crystalline quality Bi4Ti3O12 films have been obtained using different substrates at room temperature by means of electron gun deposition. The electrical and ferroelectric properties of thin films were studied using I–V and C–V measurements. The band gap has been found to be about 3.62 eV for the studied film deposited on glass substrate. Electron beam evaporation technique is the most interesting methods, once considering many advantages; such as its stability, reproducibility, high deposition rate and the compositions of the films are controlled.

scholarly journals Study of the Influence of Annealing Temperature on the Structural and Optical Properties of ZnTe Prepared by Vacuum Thermal Evaporation Technique

2018 ◽  
Vol 31 (1) ◽  
pp. 50
Author(s):  
Sarmad M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
High Smoothness ◽  
Evaporation Technique ◽  
20 Nm

   The ZnTe alloy was prepared as  deposited thin films on the glass substrates at a thickness of 400±20 nm using vacuum evaporation technique at pressure (1 × 10-5) mbar and room temperature. Then the thin films under vacuum (2 × 10-3 mbar) were annealing at (RT,100 and 300) °C for one hour. The structural properties were studied by using X-ray diffraction and AFM, the results show that the thin films had approached the single crystalline in the direction (111) as preferred orientation of the structure zinc-blende for cubic type, with small peaks of tellurium (Te) element for all prepared thin films. The calculated crystallite size (Cs) decreased with the increase in the annealing temperature, from (25) nm before the annealing to (21) nm after the annealing. The images of atomic force microscopy of all thin films appeared a homogenous structure and high smoothness through roughness values ​​that increased slightly from (1.4) nm to (3.4) nm. The optical properties of the ZnTe at (RT,100 and 300) °C were studied transmittance and absorbance spectrum as a function of the wavelength. The energy gap was found about (2.4) eV for the thin films before the annealing and increased slightly to (2.5) eV after annealing at 300 °C  

Optical Properties Of Tantalum Oxide Films Deposited On BK7 Substrates By Excimer Laser Ablation

2000 ◽  
Vol 617 ◽  
Author(s):  
S. Boughaba ◽  
M. U. Islam
Keyword(s):  
Optical Properties ◽  
Laser Ablation ◽  
Band Gap ◽  
Energy Band ◽  
Tantalum Oxide ◽  
Energy Band Gap ◽  
Optical Energy ◽  
Extinction Coefficients ◽  
Glass Substrates ◽  
Optical Energy Band Gap

AbstractThin amorphous films of tantalum oxide were grown on borosilicate crown glass substrates by KrF excimer pulsed laser ablation of a Ta2O5 target, in an oxygen environment. The deposition was performed at a temperature of 250 or 400 °C, while the oxygen pressure was set in the range 5 to 30 mTorr. The optical properties of the tantalum oxide coatings, as evaluated by reflectance/transmittance spectrophotometry, were found to be dependent on the oxygen gas pressure. At a pressure of 5 mTorr, absorbing films were obtained, with extinction coefficients above 10−2 (at λ=633 nm), along with an optical energy band-gap as low as 0.7 eV. At a pressure of 10 mTorr and above, the coatings had refractive indices up to 2.25 (at λ=633 nm), extinction coefficients below 10−4 (for λ>390 nm), and an optical energy band-gap in the range 3.9 to 4.0 eV.

scholarly journals Study of Composition and Optical Properties of Chemically Deposited Pd-xSb2S3 Thin Films

2017 ◽  
Vol 7 (3) ◽  
Author(s):  
Patrick Akata Nwofe
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Energy Band ◽  
Bath Temperature ◽  
Morphological Properties ◽  
Optical Absorption Coefficient ◽  
Complexing Agents ◽  
Energy Band Gap ◽  
Rutherford Back Scattering

The study reports on the effects of different concentration of palladium impurities on the compositional and optical properties of Palladium Doped Antimony Sulphide (Pd-xSb2S3) thin films grown by the chemical bath deposition method. The films were grown at room temperature and other deposition conditions such as the bath temperature, pH, complexing agents were kept constant. The concentration of the dopants were varied between 0.1 M to 0.3 M. The films were annealed at an annealing temperature of 200  oC  for 1 hour. The films were characterised using the Rutherford Back Scattering (RBS) techniques and optical spectroscopy (transmittance versus wavelength, absorbance versus wavelength) to investigate the composition, and optical constants (optical absorption coefficient, energy band gap, and extinction coefficient) respectively. X-ray diffractometry and Scanning electron microscopy were also used to investigate the structural and morphological properties of the layers. The results show that the transmittances of the doped layers were higher compared to the as-deposited layers. The energy band gap was direct, and were found to be decreased for the doped layers, compared to the as-grown films. The values of the energy band gap were typically ≤ 2.30 eV for the former and 2.48 eV for the latter. These values strongly suggest the use of these films in optoelectronic applications especially in solar cell devices.

Optical and valence band studies of ZnP2 thin films

1989 ◽  
Vol 4 (1) ◽  
pp. 185-188 ◽  
Author(s):  
V. Samuel ◽  
V. J. Rao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Binding Energy ◽  
X Ray Diffraction ◽  
Flash Evaporation ◽  
X Ray ◽  
Direct Band Gap ◽  
Direct Band ◽  
Evaporation Technique

Conditions have been developed for the preparation of ZnP2 and deposition of its stoichiometric thin films, using the flash evaporation technique. Structural properties of the ZnP2 obtained have been studied using x-ray diffraction, and chemical composition has been established by the polarography technique. Optical absorption of thin films of β–ZnP2 has been investigated over the range 1.2–3.2 eV. Analysis of thin film data showed that β–ZnP2 is a direct band gap material. The XPS and UPS of β–ZnP2 show a shift in binding energy (BE), which is due to transfer of electrons from zinc to phosphorus.

Influence of Source - Substrate Distance of Cu4SnS4 Thin Films Grown by Co-Evaporation

2013 ◽  
Vol 768 ◽  
pp. 103-108 ◽  
Author(s):  
Vummadi Prapulla Geetha Vani ◽  
Minnam Reddy Vasudeva Reddy ◽  
K. T. Ramakrishna Reddy
Keyword(s):  
Thin Films ◽  
Optical Transmittance ◽  
Sem Analysis ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Evaporation Technique

Copper tin sulphide (Cu4SnS4) thin films were prepared on glass substrates by the thermal co-evaporation technique by varying the source - substrate distance (SSD) in the range, 10 25 cm at a constant substrate temperature of 400°C. The influence of SSD on the chemical as well as physical properties of as-grown Cu4SnS4films was investigated. The EDS analysis revealed that the evaporated films are stoichiometric at a SSD of 20 cm. X-ray diffraction analysis confirmed the presence of Cu4SnS4phase in the layers following the orthorhombic crystal structure. The films showed a strong (311) peak as the preferred orientation. The evaluated crystallite size of the films decreased with the increase of SSD. From the SEM analysis, it was observed that needle like grains were distributed on the surface of the substrate and its size decreased with increasing SSD. The energy band gap was estimated using the optical transmittance data that varied in the range, 1.25 1.34 eV with the change of SSD.

scholarly journals The Effects of ? – Rays on The Optical Constants of ZnS Thin Films

2010 ◽  
Vol 7 (3) ◽  
pp. 1232-1236
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Flash Evaporation ◽  
Glass Substrates ◽  
Evaporation Technique

ZnS thin films were grown onto glass substrates by flash evaporation technique, the effects of ? – rays on the optical constants of ZnS these films were studied. It was found that ? – rays affected all the parameters under investigation.

scholarly journals Characterization of silver polyaniline nanocomposite thin films prepared by microwave induced plasma

2019 ◽  
Vol 13 (28) ◽  
pp. 1-9
Author(s):  
Ahmad S. Wassfi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Ag Nanoparticles ◽  
Energy Band ◽  
Average Particle ◽  
Energy Band Gap ◽  
Optical Energy ◽  
Microwave Induced Plasma ◽  
Nanocomposite Thin Films

Polyaniline (PANI) and Ag/PANI nanocomposite thin films have prepared by microwave induced plasma. The Ag powder of average particle size of 50 nm, were used to prepare Ag/PANI nanocomposite thin films. The Ag/PANI nanocomposite thin films prepared by polymerization in plasma and characterized by UV-VIS, FTIR, AFM and SEM to study the effect of silver nanoparticles on the optical properties, morphology and structure of the thin films. The optical properties studies showed that the energy band gap of the Ag/PANI (5%wt silver) decreased from 3.6 to 3.2 eV, where the substrate location varied from 4.4 to 3.4 cm from the axis of the cylindrical plasma chamber. Also the optical energy gap decreased systematically from 3.3 to 3 eV with increasing Ag nanoparticles, where Ag concentration increased from 5% to 11%wt. The FTIR measurement showed a shifting in the FTIR absorption peaks with Ag concentration. AFM and SEM images indicate that there are a few clusters of Ag and there is a uniform distribution of the Ag nanoparticles in the PANI matrix. It can be concluded that Ag/PANI nanocomposite thin films with controlled optical energy band gap can be prepared by microwave induced plasma technique.

scholarly journals Structural and optical properties of Co and Ni doped ZnO thin films prepared by RF magnetron sputtering

2017 ◽  
Vol 18 (3) ◽  
pp. 302-308 ◽  
Author(s):  
I.D. Stolyarchuk ◽  
G.I. Kleto ◽  
A. Dziedzic
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optical Absorption ◽  
Surface Morphology ◽  
Band Gap ◽  
Energy Band ◽  
Zno Thin Films ◽  
Optical Absorption Spectra ◽  
Energy Band Gap ◽  
Structural And Optical Properties

We have reported the effect of Co and Ni doping on structural and optical properties of ZnO thin films prepared by RF reactive sputtering technique. The composite targets were formed by mixing and pressing of ZnO, Mn3O4, CoO and NiO powders. The thin films were deposited on sapphire, quartz and glass substrates. The structure study confirms the formation of the hexagonal wurtzite ZnO without any secondary phase in transition metal (Co, Ni) - doped samples. Cross-sectional TEM images of all studied samples show a denseand uniformly textured structure composed of column-like structure along the growth direction. The surface morphology of the thin films was studied using atomic force microscopy (AFM). Different surface morphology (AFM) images were obtained depending on the film composition and growth conditions. Optical absorption spectra suggest of substitution Zn2+ ions in ZnO lattice by transition metal atoms. The shift of the absorption edge due to decrease the energy band gap with increasing cobalt content and complex dependence of the energy band gap on content of nickel was observed in optical absorption spectra of the studied films. The room temperature photoluminescence peaks are attributed to near band gap emission and vacancy or defect states.

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