Solvent-induced damage in polyimide thin films

Solvent induced crazes formed in strained polyimide thin films on different substrates have been studied. A fracture mechanics approach has been used to simulate craze evolution. The experiments and simulations have identified a critical prestrain below which craze formation does not occur. This strain decreases with increase in solvent exposure time, but also exhibits a threshold. Diffusion of the solvent into the film is considered to be responsible for the time-dependent nature of damage formation.

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Progressive Debonding of Multilayer Interconnect Structures

MRS Proceedings ◽

10.1557/proc-473-21 ◽

1997 ◽

Vol 473 ◽

Cited By ~ 9

Author(s):

Michael Lane ◽

Robert Ware ◽

Steven Voss ◽

Qing Ma ◽

Harry Fujimoto ◽

...

Keyword(s):

Thin Films ◽

Crack Growth ◽

Driving Force ◽

Adhesion Energy ◽

Time Dependent ◽

Multilayer Thin Films ◽

Processing Conditions ◽

Interface Morphology ◽

Entire Sample ◽

Crack Growth Velocity

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.

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Laser Induced Oxidation Effects in Bismuth Thin Films

MRS Proceedings ◽

10.1557/opl.2012.1720 ◽

2012 ◽

Vol 1477 ◽

Cited By ~ 3

Author(s):

Marco A. Zepeda ◽

Michel Picquart ◽

Emmanuel Haro-Poniatowski

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Laser Irradiation ◽

Raman Spectra ◽

Exposure Time ◽

Oxidation Process ◽

Energy Dispersion Spectroscopy ◽

Irradiation Power ◽

Pure Bismuth ◽

532 Nm

ABSTRACTThe Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).

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Time-Dependent Field Effect in Three-Dimensional Lead-Halide Perovskite Semiconductor Thin Films

ACS Applied Energy Materials ◽

10.1021/acsaem.1c01558 ◽

2021 ◽

Author(s):

Anil Reddy Pininti ◽

James M. Ball ◽

Munirah D. Albaqami ◽

Annamaria Petrozza ◽

Mario Caironi

Keyword(s):

Thin Films ◽

Field Effect ◽

Three Dimensional ◽

Time Dependent ◽

Semiconductor Thin Films ◽

Halide Perovskite ◽

Lead Halide ◽

Dependent Field

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Solvent-Induced Damage in Polyimide Thin Films

MRS Proceedings ◽

10.1557/proc-167-153 ◽

1989 ◽

Vol 167 ◽

Author(s):

M. S. Hu

Keyword(s):

Thin Films ◽

Film Thickness ◽

Exposure Time ◽

Critical Strain ◽

Threshold Value ◽

Weak Dependence ◽

Polyimide Films ◽

Band Formation ◽

Enhanced Diffusion ◽

Wide Range

AbstractSolvent induced damage bands formed in residually strained polyimide thin films on different substrates have been studied. Microscopy studies have shown that these bands resemble crazes. A mechanics approach Is taken to understand the band formation phenomenon.The critical strain for damage formation has been identified. This strain decreases with increase in exposure time, but always exhibits a threshold value. In contrast to the cracking of brittle films, the critical strain has only a weak dependence on the film thickness over a wide range. This behavior obtains because the crazing of the polyimide films is nucleation controlled. Strain-enhanced diffusion of solvent into the films is considered to be responsible for the property degradation that leads to damage formation.

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