Epitaxial growth of β–SiC thin films on a 6H–SiC substrate using the chemical solution deposition method

A polyvinylmethylsilane precursor has been used for the epitaxial growth of SiC thin films on 6H–SiC single crystal substrates. The films were prepared by dipping the single crystal 6H–SiC substrates into the precursor polymer solution with subsequent thermal treatments at different temperatures. Transmission electron microscopy (TEM) was used to characterize the microstructure and chemistry of the different SiC films. At 1100 °C, the film was amorphous and contained substantial oxygen. At 1600 °C, an epitaxial, single crystalline β–SiC film was observed.