Synthesis of thin films of polycrystalline ferroelectric BiNbO4 on Si by pulsed laser ablation

1998 ◽  
Vol 13 (5) ◽  
pp. 1113-1116 ◽  
Author(s):  
Soma Chattopadhyay ◽  
Pushan Ayyub ◽  
R. Pinto ◽  
M. S. Multani
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Polycrystalline Thin Films ◽  
Ambient Oxygen

The stibiotantalite (ABO4) family includes a number of ferroelectrics and antiferroelectrics with excellent potential for applications. We report the deposition of phase-pure, polycrystalline thin films of BiNbO4 on Si(100) substrates using pulsed laser ablation. The deposition conditions were optimized with respect to substrate temperature, laser parameters, and the ambient oxygen pressure. The films were characterized by x-ray diffraction, energy dispersive x-ray analysis, and Raman spectroscopy, while their microstructure was studied by atomic force microscopy and scanning electron microscopy. Dielectric hysteresis studies indicated that films with a thickness below ≈250 nm are ferroelectric, while thicker ones are antiferroelectric.

Characterization of BaTiO3 Thin Films Deposited by Pulsed-Laser Ablation

1990 ◽  
Vol 201 ◽  
Author(s):  
Christopher Scarfone ◽  
M. Grant Norton ◽  
C. Barry Carter ◽  
Jian Li ◽  
James W. Mayer
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Film Surface ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Very High

AbstractThin films of barium titanate (BaTiOs) have been deposited by pulsed-laser ablation onto (001)-oriented MgO substrates. The films were epitactic as evidenced by both x-ray diffraction and ion-channeling techniques. The film surface appeared smooth and contained a low density of particulates. This latter feature is believed to be due to the formation of target pellets having a very high density.

Thin Films of SrFeO2.5+x - Effect of Preferred Orientation on Oxygen Uptake

1994 ◽  
Vol 343 ◽  
Author(s):  
Brian W. Sanders ◽  
Jianhua Yao ◽  
Michael L. Post
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Oxygen Uptake ◽  
Growth Temperature ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oriented Films

ABSTRACTPulsed laser ablation has been used to deposit thin films of SrFeO25+x (x = 0 to ≈0.5). Previous work has shown that the orientation of the films, determined by powder x-ray diffraction depended strongly upon the deposition temperature. Films grown below 770 K showed little or no orientation. A growth temperature of 900 K resulted in films oriented (200). Growth temperatures of > 1000 K produced films oriented predominantly (110). At 673 K in an oxygen atmosphere, oriented films readily converted from the oxygen deficient brownmillerite form (x=0) to the oxygen rich cubic (or distorted cubic) perovskite form (x≈0.3). Films which exhibited no initial orientation did not react with oxygen under these conditions. Cycling non-oriented films between 230 and 800 ppm of oxygen in 101.3 kPa of nitrogen at 673 K resulted in weak (110) orientation. Once oriented, the films reacted readily with oxygen and exhibited measurable resistance changes. The conversion from oxygen deficient to oxygen rich form was monitored by x-ray diffraction and the DC resistance of the films.

The Structural and Morphology of (La0.7Sr0.3)MnO3 Thin Films Prepared by Pulsed Laser Deposition

2010 ◽  
Vol 150-151 ◽  
pp. 908-911 ◽  
Author(s):  
Wei Rao ◽  
Jun Yu
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

(La0.7Sr0.3)MnO3 (LSMO) thin films were prepared on Si (100) substrate by pulsed laser deposition (PLD). Both structure and surface morphology of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The results indicate that the films grown on Si (100) substrates have a single pseudo cubic perovskite phase structure with a high (100) orientation. The XPS results show that La, Sr and Mn exist mainly in the forms of perovskite structure and a SrO layer was found on outermost surface.

CARBON ION IRRADIATION EFFECTS ON PULSED LASER DEPOSITED TITANIUM NITRIDE THIN FILMS

2015 ◽  
Vol 22 (02) ◽  
pp. 1550020 ◽  
Author(s):  
KHALIQ MAHMOOD ◽  
SHAZIA BASHIR ◽  
MAHREEN AKRAM ◽  
ASMA HAYAT ◽  
FAIZAN-Ul-HAQ ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Irradiation Effects ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis ◽  
Higher Doses

Pulse laser deposited thin films of TiN are irradiated by 1 MeV carbon (C+) ions beam for various doses ranging 0.4 to 2.8 × 1014 ions/cm2. Atomic force microscopy (AFM) analysis reveals the formation of hillocks like structures after ion irradiation. X-ray diffraction (XRD) investigations show that the film crystallinity increases for lower doses ranging from 0.4 to 1.2 × 1014 ions/cm2 and decreases for higher doses (2 to 2.8 × 1014 ions/cm2) of ions. No new bands are identified from Raman spectroscopy. However, a noticeable change in microhardness has been observed. The hillock densities as well as hardness are strongly dependent upon ion dose.

X-Ray Photoelectron Spectroscopy of (La0.7Sr0.3)MnO3Thin Films Prepared by Pulsed Laser Deposition

2011 ◽  
Vol 284-286 ◽  
pp. 2191-2197 ◽  
Author(s):  
Hui Fang Xiong ◽  
Tie Dong Cheng ◽  
X.G. Tang ◽  
Jian Chen ◽  
Qiu Xiang Liu
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

(La0.7Sr0.3)MnO3 (LSMO) thin films were grown on Si (100) substrate by using pulsed laser deposition (PLD) process. Both structure and surface morphology of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. From XRD, the results indicate that the films grown on Si (100) substrates have a single pseudocubic perovskite phase structure with a high (100) orientation. The XPS results show that La, Sr and Mn exist mainly in the forms of perovskite structure and a SrO layer was found on outermost surface. The films resistivity emeasured under room temperature is 6.4´10-4 W×cm.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Pile Up ◽  
Average Modulus

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

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