Mn-incorporated ZnSe and CdSe 1-dimensional Nanostructures

2006 ◽  
Vol 963 ◽  
Author(s):  
Seonoh Hwang ◽  
Jinyoung Lee ◽  
Hyunju Lee ◽  
Sangwon Yoon ◽  
Jeunghee Park
Keyword(s):  
Chemical Vapor ◽  
Wurtzite Structure ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Mn Content ◽  
Mn Doped ◽  
Microscopy Images

ABSTRACTNovel Mn-incorporated ZnSe and CdSe 1-dimensionl nanostructures; straight nanowires, zigzagged nanobelts, and nanohooks, were first synthesized using chemical vapor deposition method. The Mn content reaches up to 40%. They all consisted of single-crystalline wurtzite structure for all Mn content. The structure has been thoroughly investigated by high-resolution transmission electron microscopy images as well as energy-dispersive X-ray fluorescence spectroscopy. The X-ray diffraction pattern confirms the formation of the wurtzite structure, even for 40% Mn incorporation. The lattice constants of Mn-doped ZnSe and CdSe 1-D nanostructures are expanded and reduced, respectively, by the Mn doping. The Mn2+ emission at 2.1 eV, originating from the d-d (4T1 → 6A1) transition, confirms the effective paramagnetic Mn2+ doping at tetrahedral coordinate sites. These Mn-incorporated nanostructures exhibit a paramagnetic behavior.

Synthesis of Crystalline C3N4 films and the new C-N Phases

1996 ◽  
Vol 441 ◽  
Author(s):  
Yan Chen ◽  
D. J. Johnson ◽  
R. H. Prince ◽  
Liping Guo ◽  
E. G. Wang
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Monoclinic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Hot Filament

AbstractCrystalline C-N films composed of α- and β-C3N4, as well as other C-N phases, have been synthesized via bias-assisted hot-filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy(SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the films. Lattice constants of the α- and β-C3N4 phases obtained coincide very well with the theoretical values. In addition to these phases, two new C-N phases in the films have been identified by TEM and XRD; one having a tetragonal structure with a = 5.65 Å, c = 2.75Å, and the second having a monoclinic structure with a = 5.065 Å, b= 11.5 Å, c = 2.801 Å and β = 96°. Their stoichiometric values and atomic arrangements have not yet been identified. Furthermore, variation in growth parameters, for example methane concentration, bias voltage, etc., can yield preferred growth of different C-N phases.

scholarly journals Fabrication of CaO Insulator Coatings by MOCVD for Application in Fusion Reactor Blankets

2001 ◽  
Vol 697 ◽  
Author(s):  
Z. Zeng ◽  
K. Natesan
Keyword(s):  
Chemical Vapor ◽  
Liquid Lithium ◽  
Chemical Vapor Deposition Method ◽  
Fusion Reactors ◽  
X Ray Diffraction ◽  
Electrical Insulator ◽  
X Ray ◽  
Coating Composition ◽  
Microscopy Images ◽  
Lithium Blanket

AbstractThe liquid lithium blanket for fusion reactors requires an electrically insulating coating on the duct to minimize the magnetohydrodynamic pressure drop that occurs during the flow of liquid metal in a magnetic field. Calcium oxide (CaO) is a good candidate for the coating material because it is an excellent electrical insulator and it is stable in a liquid lithium environment. In this paper, details are presented on metalorganic chemical-vapor deposition method that was used to fabricate the CaO coating. Composition and phase analyses of the coating were performed by energy dispersive X-ray analysis and X-ray diffraction. Scanning electron microscopy images show that the coating did not crack after several thermal cycles from room temperature to 715°C. The resistance of the coating is high enough for an insulating coating on the liquid lithium blanket of fusion reactors.

Growth and Photoluminescence of β-SiC Nanowires on Porous Silicon Array

2013 ◽  
Vol 662 ◽  
pp. 11-15
Author(s):  
Hai Yan Wang ◽  
Li Ping Kang ◽  
Yong Qiang Wang ◽  
Zi Jiong Li
Keyword(s):  
Electron Microscopy ◽  
Porous Silicon ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Fluorescent Light ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sic Nanowires ◽  
Quantum Confinement Effects ◽  
Transmission Electron

Nonaligned and curly β-SiC nanowires (nw-SiC) were grown on porous silicon array (PSA) by a chemical vapor deposition method with nickel as the catalyst. The morphology, structure and the composition of the nw-SiC/PSA and the SiC-SiO2core-shell fibers which is the semi-product were characterized by scanning electron microscopy, transmission electron microscopy and X-ray diffraction. Based on the experimental results a possible growth mechanism of nw-SiC was explained. Two broad photoluminescence peaks located around ~409 and ~494 nm were observed in nw-SiC/PSA in the PL measurement when utilizing 300 nm ultraviolet fluorescent light excited at room temperature. The excellent luminescent performances are ascribed to the quantum confinement effects in nw-SiC. The optical merits of nw-SiC/PSA made it a promising material in the fields of ultraviolet-blue emitting devices.

SYNTHESIS OF HIGH QUALITY CRYSTALLINE C-N FILMS ON SILICON

1996 ◽  
Vol 10 (12) ◽  
pp. 567-571 ◽  
Author(s):  
YAN CHEN ◽  
E.G. WANG ◽  
FENG CHEN ◽  
LIPING GUO
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Interfacial Layer ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Transmission Electron ◽  
Hot Filament ◽  
Microscopy Images

High quality crystalline C–N films have been synthesized via hot filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy images show that a high density of crystalline clusters has been achieved. The clusters are composed of small columnar crystals (20–200 nm across) with hexagonal facets. Energy dispersive X ray analysis indicates a relative nitrogen:carbon composition of 1.30–2.5. X ray diffraction results indicate the films composed of β- and α- C 3 N 4 phases. Together with transmission electron microscopy analyses, we suggest that an interfacial layer C 3−x Si x N 4 is formed between the silicon substrate and the crystalline carbonnitride films.

scholarly journals Fabrication and Physical Properties of Single-Crystalline Βeta-FeSi2 Nanowires

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Chih-Yung Yang ◽  
Shu-Meng Yang ◽  
Yu-Yang Chen ◽  
Kuo-Chang Lu
Keyword(s):  
Electron Microscopy ◽  
Physical Properties ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Ferromagnetic Behavior ◽  
X Ray Diffraction ◽  
Field Emitters ◽  
Transmission Electron ◽  
Single Source Precursor ◽  
Carrier Gases

Abstract In this study, self-catalyzed β-FeSi2 nanowires, having been wanted but seldom achieved in a furnace, were synthesized via chemical vapor deposition method where the fabrication of β-FeSi2 nanowires occurred on Si (100) substrates through the decomposition of the single-source precursor of anhydrous FeCl3 powders at 750–950 °C. We carefully varied temperatures, duration time, and the flow rates of carrier gases to control and investigate the growth of the nanowires. The morphology of the β-FeSi2 nanowires was observed with scanning electron microscopy (SEM), while the structure of them was analyzed with X-ray diffraction (XRD) and transmission electron microscopy (TEM). The growth mechanism has been proposed and the physical properties of the iron disilicide nanowires were measured as well. In terms of the magnetization of β-FeSi2, nanowires were found to be different from bulk and thin film; additionally, longer β-FeSi2 nanowires possessed better magnetic properties, showing the room-temperature ferromagnetic behavior. Field emission measurements demonstrate that β-FeSi2 nanowires can be applied in field emitters.

Control of Morphology and Growth Direction of Gallium Nitride Nanostructures

2003 ◽  
Vol 789 ◽  
Author(s):  
Seung Yong Bae ◽  
Hee Won Seo ◽  
Jeunghee Park
Keyword(s):  
Electron Microscopy ◽  
Gallium Nitride ◽  
Large Scale ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Oxide Mixture ◽  
Temperature Range ◽  
Transmission Electron

ABSTRACTVarious shaped single-crystalline gallium nitride (GaN) nanostructures were produced by chemical vapor deposition method in the temperature range of 900–1200 °C. Scanning electron microscopy, transmission electron microscopy, electron diffraction, x-ray diffraction, electron energy loss spectroscopy, Raman spectroscopy, and photoluminescence were used to investigate the structural and optical properties of the GaN nanostructures. We controlled the GaN nanostructures by the catalyst and temperature. The cylindrical and triangular shaped nanowires were synthesized using iron and gold nanoparticles as catalysts, respectively, in the temperature range of 900 – 1000 °C. We synthesized the nanobelts, nanosaws, and porous nanowires using gallium source/ boron oxide mixture. When the temperature of source was 1100 °C, the nanobelts having a triangle tip were grown. At the temperature higher up to 1200 °C the nanosaws and porous nanowires were formed with a large scale. The cylindrical nanowires have random growth direction, while the triangular nanowires have uniform growth direction [010]. The growth direction of the nanobelts is perpendicular to the [010]. Interestingly, the nanosaws and porous nanowires exhibit the same growth direction [011]. The shift of Raman, XRD, and PL bands from those of bulk was correlated with the strains of the GaN nanostructures.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Facile Refluxing Synthesis of Hydroxyapatite Nanoparticles

2015 ◽  
Vol 68 (8) ◽  
pp. 1293 ◽  
Author(s):  
Pakvipar Chaopanich ◽  
Punnama Siriphannon
Keyword(s):  
Crystallite Size ◽  
Reaction Times ◽  
Single Step ◽  
Hydroxyapatite Nanoparticles ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Aqueous Mixture ◽  
Diffraction Patterns ◽  
Microscopy Images

Hydroxyapatite (HAp) nanoparticles were successfully synthesized from an aqueous mixture of Ca(NO3)2·4H2O and (NH4)2HPO4 by a facile single-step refluxing method using polystyrene sulfonate (PSS) as a template. The effects of reaction times, pH, and PSS concentration on the HAp formation were investigated. It was found that the crystalline HAp was obtained under all conditions after refluxing the precursors for 3 and 6 h. The longer refluxing time, the greater the crystallinity and the larger the crystallite size of the HAp nanoparticles. The HAp with poor crystallinity was obtained at pH 8.5; however, the well-crystallized HAp was obtained when reaction pH was increased to 9.5 and 10.5. In addition, the X-ray diffraction patterns revealed that the presence of PSS template caused the reduction of HAp crystallite size along the (002) plane from 52.6 nm of non-template HAp to 43.4 nm and 41.4 nm of HAp with 0.05 and 0.2 wt-% PSS template, respectively. Transmission electron microscopy images of the synthesized HAp revealed the rod-shaped crystals of all samples. The synthesized HAp nanoparticles were modified by l-aspartic acid (Asp) and l-arginine (Arg), having negative and positive charges, respectively. It was found that the zeta potential of HAp was significantly changed from +5.46 to –24.70 mV after modification with Asp, whereas it was +4.72 mV in the Arg-modified HAp. These results suggested that the negatively charged amino acid was preferentially adsorbed onto the synthesized HAp surface.

Microstructures of two-phase Ti–Cr alloys containing the TiCr2 Laves phase intermetallic

1997 ◽  
Vol 12 (6) ◽  
pp. 1472-1480 ◽  
Author(s):  
Katherine C. Chen ◽  
Samuel M. Allen ◽  
James D. Livingston
Keyword(s):  
Laves Phase ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
Phase Growth ◽  
Two Phase ◽  
X Ray ◽  
Lattice Constants ◽  
Annealing Temperatures ◽  
Transmission Electron ◽  
Phase Intermetallic

Microstructures of two-phase Ti–Cr alloys (Ti-rich bcc + TiCr2 and Cr-rich bcc + TiCr2) are analyzed. A variety of TiCr2 precipitate morphologies is encountered with different nominal alloy compositions and annealing temperatures. Lattice constants and crystal structures are determined by x-ray diffraction (XRD) and transmission electron microscopy (TEM). Orientation relationships between the beta bcc solid solution and C15 TiCr2 Laves phase are understood in terms of geometrical packing, and are consistent with a Laves phase growth mechanism involving twinning.

Understanding the Growth Mechanisms of Tin Oxide Nanowires by Chemical Vapor Deposition

2021 ◽  
Vol 21 (4) ◽  
pp. 2538-2544
Author(s):  
Nguyen Minh Hieu ◽  
Nguyen Hoang Hai ◽  
Mai Anh Tuan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Mapping ◽  
X Ray Diffraction ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Scanning Transmission

Tin oxides nanowires were prepared by chemical vapor deposition using shadow mask. X-ray diffraction indicated that the products were tetragonal having crystalline structure with lattice constants a = 0.474 nm and c = 0.318 nm. The high-resolution transmission electron microscopy revealed that inter planar spacing is 0.25 nm. The results chemical mapping in scanning transmission electron microscopy so that the two elements of Oxygen and Tin are distributed very homogeneously in nanowires and exhibit no apparent elements separation. A bottom-up mechanism for SnO2 growth process has been proposed to explain the morphology of SnO2 nanowires.

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