Liquid Phase Epitaxial Growth of Semi-Insulating Aigalnas by Fe Doping
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ABSTRACTFe-doped semi-insulating AlGalnAs grown by liquid phase epitaxy has been studied and compared to Fe-doped GalnAsP. It has been found that semiinsulating AlGalnAs is easier to obtain than semi-insulating GalnAsP, because of its high iron distribution coeficient. The high resistivity of 1×109 ohm-cm has been obtained for Al0.481n0.52 As grown at 750°C. The activation energy of the Fe acceptor level in the AlGalnAs system has also been studied.
1980 ◽
Vol 63
(11)
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pp. 109-117
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1982 ◽
Vol 43
(C5)
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pp. C5-3-C5-10
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1972 ◽
Vol 1
(4)
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pp. 437-457
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1984 ◽
Vol 70
(1-2)
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pp. 162-168
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1978 ◽
Vol 14
(5)
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pp. 421-423
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1977 ◽
Vol 42
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pp. 334-342
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