High Performance N-type Organic Thin-Film Transistors with Inert Contact Metals

2009 ◽  
Vol 1154 ◽  
Author(s):  
Sarah Schols ◽  
Lucas Van Willigenburg ◽  
Robert Müller ◽  
Dieter Bode ◽  
Maarten Debucquoy ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Film Growth ◽  
High Vacuum ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Deposition Fluxes ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

AbstractThin film growth by high vacuum evaporation of the n-type organic semiconductor 5, 5″′-diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2″′-quaterthiophene (DFHCO-4T) on poly-(α-methylstyrene)-coated n++-Si/SiO2 substrates is investigated at various deposition fluxes and substrate temperatures. Film characterization by atomic force microscopy reveals typical Stransky-Krastanov growth. Transistors with Au source-drain top contacts and optimized DFHCO-4T deposition conditions attain an apparent saturation mobility of 4.6 cm2/Vs, whereas this parameter is 100× lower for similar transistors with LiF/Al top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor injection properties resulting from a redox reaction between Al and DFHCO-4T.

Characterization of Step-Edge Barriers in Organic Thin-Film Growth

Science ◽  
2008 ◽  
Vol 321 (5885) ◽  
pp. 108-111 ◽  
Author(s):  
G. Hlawacek ◽  
P. Puschnig ◽  
P. Frank ◽  
A. Winkler ◽  
C. Ambrosch-Draxl ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Step Edge ◽  
Organic Thin Film

scholarly journals Low Temperature Epitaxial Barium Titanate Thin Film Growth in High Vacuum CVD

2017 ◽  
Vol 4 (18) ◽  
pp. 1700116 ◽  
Author(s):  
Michael Reinke ◽  
Yury Kuzminykh ◽  
Felix Eltes ◽  
Stefan Abel ◽  
Thomas LaGrange ◽  
...  
Keyword(s):  
Thin Film ◽  
Barium Titanate ◽  
Low Temperature ◽  
Film Growth ◽  
High Vacuum ◽  
Thin Film Growth ◽  
Barium Titanate Thin Film ◽  
Titanate Thin Film

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

scholarly journals An STM study of molecular exchange processes in organic thin film growth

2014 ◽  
Vol 50 (69) ◽  
pp. 9954-9957 ◽  
Author(s):  
José M. Gallego ◽  
David Ecija ◽  
Nazario Martín ◽  
Roberto Otero ◽  
Rodolfo Miranda
Keyword(s):  
Thin Film ◽  
Surface Diffusion ◽  
Outer Surface ◽  
Film Growth ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Exchange Processes

PCBM molecules deposited on an exTTF layer grown on Au(111) exchange places with the exTTF molecules, expelling them to the outer surface, even at 150 K, when the surface diffusion of the exTTF molecules is completely frozen.

Prospects of High-Performance Computational Experiments on Thin Film Growth

2016 ◽  
Author(s):  
Fedor V. Grigoriev ◽  
Alexei Sulimov ◽  
Igor Kochikov ◽  
Olga Kondakova ◽  
Vladimir Sulimov ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Film Growth ◽  
Thin Film Growth ◽  
Computational Experiments

scholarly journals Coverage dependent adsorption dynamics in hyperthermal organic thin film growth

2009 ◽  
Vol 130 (12) ◽  
pp. 124701 ◽  
Author(s):  
A. Amassian ◽  
T. V. Desai ◽  
S. Kowarik ◽  
S. Hong ◽  
A. R. Woll ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Adsorption Dynamics

scholarly journals Optimizing Pentacene Growth in Low-Voltage Organic Thin-Film Transistors Prepared by Dry Fabrication Techniques

2012 ◽  
Vol 1435 ◽  
Author(s):  
S. Gupta ◽  
K. C. Chinnam ◽  
M. Zelzer ◽  
R. Ulijn ◽  
H. Gleskova
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Evaporation Rate ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Transistor Channel ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTWe have studied the effect of pentacene purity and evaporation rate on low-voltage organic thin-film transistors (OTFTs) prepared solely by dry fabrication techniques. The maximum field-effect mobility of 0.07 cm2/Vs was achieved for the highest pentacene evaporation rate of 0.32 Å/s and four-time purified pentacene. Four-time purified pentacene also led to the lowest threshold voltage of -1.1 V and inverse subthreshold slope of ∼100 mV/decade. In addition, pentacene surface was imaged using atomic force microscopy, and the transistor channel and contact resistances for various pentacene evaporation rates were extracted and compared to field-effect mobilities.

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