Electronic structure and phase stability of In-free photovoltaic semiconductors, Cu2ZnSnSe4 and Cu2ZnSnS4 by first-principles calculation

2009 ◽  
Vol 1165 ◽  
Author(s):  
Tsuyoshi Maeda ◽  
Satoshi Nakamura ◽  
Takahiro Wada
Keyword(s):  
Electronic Structure ◽  
Plane Wave ◽  
Phase Stability ◽  
First Principles ◽  
Density Functional ◽  
Formation Enthalpy ◽  
First Principles Calculation ◽  
Enthalpies Of Formation ◽  
Functional Formalism ◽  
The Difference

AbstractWe have theoretically evaluated the phase stability and electronic structure of Cu2ZnSnSe4 (CZTSe) and Cu2ZnSnS4 (CZTS). The enthalpies of formation for kesterite, stannite and wurtz-stannite phases of CZTSe and CZTS were calculated using a plane-wave pseudopotential method within the density functional formalism. For CZTSe, the calculated formation enthalpy (ΔH) of the kesterite phase (−312.7 kJ/mol) is a little smaller than that of the stannite phase (−311.3 kJ/mol) and much smaller than that of the wurtz-stannite phase (−305.7 kJ/mol). For CZTS, the ΔH of the kesterite phase (−361.9 kJ/mol) is smaller than that of the stannite phase (−359.9 kJ/mol) and much smaller than that of the wurtz-stannite phase (−354.6 kJ/mol). The difference of ΔH between the kesterite and stannite phases for CZTS is greater than that for CZTSe. This indicates the kesterite phase is more stable than the stannite phase in CZTS compared with CZTSe. The valence band maximums (VBMs) of both the kesterite- and stannite-type CZTSe(CZTS) are antibonding orbitals of Cu 3d and Se 4p (S 3p). The conduction band minimums (CBMs) are antibonding orbitals of Sn 5s and Se 4p (S 3p). The Zn atom does not affect the VBM or the CBM in either CZTSe(CZTS). The theoretical band gap of the kesterite phase calculated with sX-LDA in both CZTSe and CZTS is a little wider than that of the wurtz-stannite phase and much wider than that of the stannite phase.

Magnetic Properties of Embedded Rh Clusters in Ni Matrix

1995 ◽  
Vol 384 ◽  
Author(s):  
Zhi-Qiang Li ◽  
Yuichi Hashi ◽  
Jing-Zhi Yu ◽  
Kaoru Ohno ◽  
Yoshiyuki Kawazoe
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
First Principles ◽  
Density Functional ◽  
Local Density ◽  
Magnetic Moments ◽  
Functional Formalism ◽  
Rhodium Clusters ◽  
Spin Polarized ◽  
Local Density Functional

ABSTRACTThe electronic structure and magnetic properties of rhodium clusters with sizes of 1 - 43 atoms embedded in the nickel host are studied by the first-principles spin-polarized calculations within the local density functional formalism. Single Rh atom in Ni matrix is found to have magnetic moment of 0.45μB. Rh13 and Rhl 9 clusters in Ni matrix have lower magnetic moments compared with the free ones. The most interesting finding is tha.t Rh43 cluster, which is bulk-like nonmagnetic in vacuum, becomes ferromagnetic when embedded in the nickel host.

Effect of Alloying Elements V, Cr and Ni on the Electronic Structure and Mechanical Properties of FeAl from First-Principles Calculation

2014 ◽  
Vol 887-888 ◽  
pp. 378-383 ◽  
Author(s):  
Yu Chen ◽  
Zheng Jun Yao ◽  
Ping Ze Zhang ◽  
Dong Bo Wei ◽  
Xi Xi Luo ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Electronic Structure ◽  
Elastic Constants ◽  
First Principles ◽  
Density Functional ◽  
Valence Bond ◽  
Ternary Alloys ◽  
First Principles Calculation ◽  
Structure Stability ◽  
Alloying Element

The structure stability, mechanical properties and electronic structures of B2 phase FeAl intermetallic compounds and FeAl ternary alloys containing V, Cr or Ni were investigated using first-principles density functional theory calculations. Several models are established. The total energies, cohesive energies, lattice constants, elastic constants, density of states, and the charge densities of Fe8Al8 and Fe8XAl7 ( X=V, Cr, Ni ) are calculated. The stable crystal structures of alloy systems are determined due to the cohesive energy results. The calculated lattice contants of Fe-Al-X ( X= V, Cr, Ni) were found to be related to the atomic radii of the alloy elements. The calculation and analysis of the elastic constants showed that ductility of FeAl alloys was improved by the addition of V, Cr or Ni, the improvement was the highest when Cr was used. The order of the ductility was as follows: Fe8CrAl7 > Fe8NiAl7 > Fe8VAl7 > Fe8Al8. The results of electronic structure analysis showed that FeAl were brittle, mainly due to the orbital hybridization of the s, p and d state electron of Fe and the s and p state electrons of Al, showing typical characteristics of a valence bond. Micro-mechanism for improving ductility of FeAl is that d orbital electron of alloying element is maily involved in hybridization of FeAl, alloying element V, Cr and Ni decrease the directional property in bonding of FeAl.

First-Principles Study on Elastic Anomalies in Ag/Al Multilayers

2007 ◽  
Vol 345-346 ◽  
pp. 959-962
Author(s):  
Yusuke Kinoshita ◽  
Yoshitaka Umeno ◽  
Takayuki Kitamura
Keyword(s):  
Electronic Structure ◽  
Elastic Constant ◽  
First Principles ◽  
Electronic Structures ◽  
Interplanar Spacing ◽  
First Principles Calculation ◽  
Mixing Rule ◽  
Modulation Period ◽  
The Difference ◽  
Elastic Anomalies

Using the first-principles calculation, the elastic constant C44 of Ag/Al multilayers with different modulation periods from 0.43 nm to 2.27 nm has been evaluated in order to examine the effect of atomic and electronic structures on it. With increasing modulation period, C44 decreases and becomes close to that obtained by the conventional mixing rule, however, the difference of 8 % still remains at the modulation period of 2.27 nm. As C44 correlates with the average interplanar spacing, the decrease of C44 can be explained by the decrease of the charge density in the stacking direction due to the increase of the average interplanar spacing. The difference in the electronic structure is included in the effect of atomic structure.

scholarly journals The Influence of Electronic Structure Modelling and Junction Structure on First-Principles Chiral Induced Spin Selectivity

2020 ◽  
Author(s):  
Martin Sebastian Zöllner ◽  
Vladimiro Mujica ◽  
Carmen Herrmann
Keyword(s):  
Electronic Structure ◽  
First Principles ◽  
Density Functional ◽  
Orbit Coupling ◽  
First Principles Calculation ◽  
Physical Parameters ◽  
Theory Approach ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Junction Structure

<br>We have carried out a comprehensive study of the influence of electronic structure modeling and junction structure description on the first-principles calculation of the spin polarization in molecular junctions caused by the chiral induced spin selectivity (CISS) effect. We explore the limits and the sensitivity to modelling decisions of a Landauer / Green’s function / density functional theory approach to CISS. We find that although the CISS effect is entirely attributed in the literature to molecular spin filtering, spin-orbit coupling being partially inherited from the metal electrodes plays an important role in our calculations, even though this effect cannot explain the experi- mental conductance results. Also, an important dependence on the specific description of exchange interaction and spin–orbit coupling is manifest in our approach. This is important because the interplay between exchange effects and spin-orbit coupling may play an important role in the description of the junction magnetic response. Our calculations are relevant for the whole field of spin-polarized electron transport and electron transfer because there is still an open discussion in the literature about the detailed underlying mechanism and the magnitude of relevant physical parameters that need to be included to achieve a consistent description of the CISS effect<br>

scholarly journals Effects of Doped Elements (Si, Cr, W and Nb) on the Stability, Mechanical Properties and Electronic Structures of MoAlB Phase by the First-Principles Calculation

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4221
Author(s):  
Yongxin Jian ◽  
Zhifu Huang ◽  
Yu Wang ◽  
Jiandong Xing
Keyword(s):  
Mechanical Properties ◽  
Chemical Bonding ◽  
First Principles ◽  
Electronic Structures ◽  
Density Functional ◽  
Formation Enthalpy ◽  
First Principles Calculation ◽  
Elemental Doping ◽  
The Stability ◽  
W Doping

First-principles calculations based on density functional theory (DFT) have been performed to explore the effects of Si, Cr, W, and Nb elements on the stability, mechanical properties, and electronic structures of MoAlB ternary boride. The five crystals, with the formulas of Mo4Al4B4, Mo4Al3SiB4, Mo3CrAl4B4, Mo3WAl4B4, and Mo3NbAl4B4, have been respectively established. All the calculated crystals are thermodynamically stable, according to the negative cohesive energy and formation enthalpy. By the calculation of elastic constants, the mechanical moduli and ductility evolutions of MoAlB with elemental doping can be further estimated, with the aid of B/G and Poisson’s ratios. Si and W doping cannot only enhance the Young’s modulus of MoAlB, but also improve the ductility to some degree. Simultaneously, the elastic moduli of MoAlB are supposed to become more isotropic after Si and W addition. However, Cr and Nb doping plays a negative role in ameliorating the mechanical properties. Through the analysis of electronic structures and chemical bonding, the evolutions of chemical bondings can be disclosed with the addition of dopant. The enhancement of B-B, Al/Si-B, and Al/Si-Mo bondings takes place after Si substitution, and W addition apparently intensifies the bonding with B and Al. In this case, the strengthening of chemical bonding after Si and W doping exactly accounts for the improvement of mechanical properties of MoAlB. Additionally, Si doping can also improve the Debye temperature and melting point of the MoAlB crystal. Overall, Si element is predicted to be the optimized dopant to ameliorate the mechanical properties of MoAlB.

scholarly journals Electronic structure and optical properties of CsI under high pressure: a first-principles study

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52449-52455 ◽  
Author(s):  
Qiang Zhao ◽  
Zheng Zhang ◽  
Xiaoping Ouyang
Keyword(s):  
Density Functional Theory ◽  
High Pressure ◽  
Optical Properties ◽  
Electronic Structure ◽  
First Principles ◽  
Calculation Method ◽  
Density Functional ◽  
First Principles Calculation ◽  
Functional Theory ◽  
First Principles Study

We investigated the effects of high pressure on the electronic structure and optical properties of a CsI crystal through a first-principles calculation method based on density functional theory.

Electronic Structure and Ground State Properties of A4[Ag4O4] (A=Na, K and Rb): A First-Principles Study

2013 ◽  
Vol 665 ◽  
pp. 43-48
Author(s):  
Rajagopalan Umamaheswari ◽  
M. Yogeswari ◽  
G. Kalpana
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Ground State ◽  
First Principles ◽  
Density Functional ◽  
Electronic Band Structure ◽  
First Principles Calculation ◽  
Partial Density ◽  
Electronic Band ◽  
Ground State Properties

The first-principles calculation within density functional theory is used to study in detail the electronic structure and ground state properties of alkali-metal oxoargenates A4[Ag4O4] (A= Na, K and Rb). The total energies calculated within the atomic sphere approximation (ASA) were used to determine the ground state properties such as equilibrium lattice parameter, c/a ratio, bulk modulus and cohesive energy. The theoretically calculated equilibrium lattice constants values are in well agreement with the available experimental values. The electronic band structures, total and partial density of states are calculated. The result of electronic band structure shows that the KAgO and RbAgO are direct band gap semiconductors with their gap lying between the Γ-Γ points, whereas NaAgO is found to be an indirect band gap semiconductor with its gap lying between Z-Γ points.

First Principles Calculations Study of Lithium-Montmorillonite for Humidity Sensor Application

2016 ◽  
Vol 1 ◽  
Author(s):  
Triati Dewi Kencana Wungu
Keyword(s):  
Electronic Structure ◽  
Water Molecule ◽  
First Principles ◽  
Density Functional ◽  
Humidity Sensor ◽  
Point Of View ◽  
First Principles Calculation ◽  
Repulsive Interaction ◽  
Hydrogen Atoms ◽  
Sensor Application

In this study, we performed calculations on the water molecule adsorbed on lithium montmorillonite using first principles-calculation by means of electronic-structure calculation, with emphasis on approaches based on Density Functional Theory (DFT). The mechanism of water molecule adsorption on the surface of lithium-montmorillonite was investigated from the electronic structure point of view to seek the possibility of using montmorillonite as humidity sensor. The effects of the Van der Waals force to the electronic properties of water molecule on the surface of montmorillonite was also considered and obtained that the structure is more stable energetically. The interaction of water molecule with surface of montmorillonite yields the rotation of the hydrogen atoms of water molecule due to the occurrence of repulsive interaction between two positive ions of hydrogen of water molecule and lithium. From the calculations, lithium-montmorillonite can be considered as a good material for humidity sensor application since there is an electrical change observed even though it is a relatively small that is 0.657 eV.

Cs ADSORPTION ON GaAS(001) As-RICH β2 (2×4) AND Ga-RICH (4×2) RECONSTRUCTION PHASES: A FIRST-PRINCIPLES RESEARCH

2020 ◽  
pp. 2150007
Author(s):  
XIAOHUA YU ◽  
HUIXIA SUN ◽  
GUIRONG SHAO
Keyword(s):  
Density Functional Theory ◽  
Electronic Structure ◽  
Dipole Moment ◽  
Plane Wave ◽  
First Principles ◽  
Density Functional ◽  
Density Of State ◽  
Functional Theory ◽  
Text Reconstruction ◽  
The Stability

Using plane-wave ultrasoft pseudopotential method based on first-principles density functional theory (DFT), the adsorption of Cs atom on As-rich GaAs(001)[Formula: see text]([Formula: see text]) reconstruction phase and Ga-rich GaAs(001)([Formula: see text]) reconstruction phase are investigated. The adsorption energy, work function, dipole moment, ionicity, band structure and density of state (DOS) of Cs adsorbed GaAs [Formula: see text]([Formula: see text]) and ([Formula: see text]) models are calculated. The stability and electronic structure of Cs adsorbed GaAs [Formula: see text]([Formula: see text]) and ([Formula: see text]) models are compared. Result shows that [Formula: see text]([Formula: see text]) phase is stable than the ([Formula: see text]) phase and after that Cs adsorption [Formula: see text]([Formula: see text]) phase is more beneficial for photoemission.

Hydrogen Storage of Platinum Atoms Adsorbed on Graphene: First-Principles Plane Wave Calculations

2012 ◽  
Vol 246-247 ◽  
pp. 1057-1060 ◽  
Author(s):  
Ye Lu He ◽  
Shu Xia Wang
Keyword(s):  
Plane Wave ◽  
Hydrogen Storage ◽  
Molecular Orbital ◽  
First Principles ◽  
Density Functional ◽  
Generalized Gradient ◽  
Geometrical Structures ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
The Difference

The geometrical structures of platinum atoms adsorbed on graphene were optimized using plane wave pseudopotential method with generalized gradient approximation based upon the density functional theory. Adsorption energies of both intrinsic graphene and platinum atoms adsorbed on graphene were calculated theoretically. The results show that: Compared with the intrinsic, H2 molecules are strongly adsorbed onto the platinum atoms adsorbed on graphene with higher adsorbed energy. The difference between the highest hydrogen molecule occupied molecular orbital and the 1owest unoccupied molecular orbital is significantly reduced. Between hydrogen and other atoms, the charge transfers are apparent increased. All are help for hydrogen storage.

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