Room Temperature Ferromagnetism in Al-doped/Al2O3-doped ZnO Film

2009 ◽  
Vol 1201 ◽  
Author(s):  
Yuwei Ma ◽  
Jun Ding ◽  
Min Ran ◽  
Xue Lian Huang ◽  
Chee Mang Ng
Keyword(s):  
Magnetic Property ◽  
Charge Transfer ◽  
Saturation Magnetization ◽  
Amorphous Phase ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Films ◽  
Zno Film ◽  
Zno Nanocrystals ◽  
Doped Zno

AbstractIn this manuscript, we study the magnetic property of Al-doped/Al2O3-doped ZnO films. We found that metallic Al-doped ZnO film shows room temperature ferromagnetism (RTFM). RTFM is correlated with the interaction of Al metallic clusters and ZnO matrix. The charge transfer has been observed between metallic Al and ZnO matrix. Therefore, RTFM in metallic Al doped ZnO may be highly probable due to charge transfer between metallic Al clusters and ZnO matrix. For Al2O3-doped ZnO film (denoted as (Zn1-x, Alx)O), RTFM was found in (Zn1-x, Alx)O film with a certain Al concentration range (16 mol%<x<50 mol%). The saturation magnetization is maximized in (Zn0.70, Al0.30)O film. The mechanism of RTFM can be explained as the interaction of ZnO nanocrystals (NCs) embedded in the amorphous phase and defects surrounding them.

Effect of defects on room-temperature ferromagnetism of Cr-doped ZnO films

2009 ◽  
Vol 60 (4) ◽  
pp. 214-217 ◽  
Author(s):  
L.J. Zhuge ◽  
X.M. Wu ◽  
Z.F. Wu ◽  
X.M. Chen ◽  
Y.D. Meng
Keyword(s):  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Films ◽  
Doped Zno

Room Temperature Ferromagnetism and Photoluminescence of Fe Doped ZnO Nanocrystals

2011 ◽  
Vol 115 (48) ◽  
pp. 23671-23676 ◽  
Author(s):  
Darshana Y. Inamdar ◽  
Arjun K. Pathak ◽  
Igor Dubenko ◽  
Naushad Ali ◽  
Shailaja Mahamuni
Keyword(s):  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Nanocrystals ◽  
Doped Zno

The Structural, Electrical, Magnetic Properties of (Cu, Co) Co-Doped ZnO Thin Film

2014 ◽  
Vol 556-562 ◽  
pp. 429-432
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu
Keyword(s):  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Sol Gel ◽  
Hall Effect Measurement ◽  
Ferromagnetic Semiconductors ◽  
Zno Thin Film ◽  
Zno Film ◽  
Co Doping ◽  
Doped Zno ◽  
Co Doped

Successful synthesis of room-temperature ferromagnetic semiconductors, (Cu, Co) co-doped ZnO film is obtained by sol-gel method. It is found that the essential ingredient in achieving room-temperature ferromagnetism is Cu co-doping. By Hall-effect measurement ap-type conductivity was observed for the Cu co-doped films, which induced the room-temperature ferromagnetism.

Room Temperature Ferromagnetism and Band Gap Engineering in Mg Doped ZnO RF/DC Sputtered Films

2013 ◽  
Vol 1577 ◽  
Author(s):  
Sreekanth K. Mahadeva ◽  
Zhi-Yong Quan ◽  
Jin-Cheng Fan ◽  
Hasan B. Albargi ◽  
Gillian A Gehring ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Ambient Conditions ◽  
Zno Film ◽  
Band Gap Engineering ◽  
Sputtered Films ◽  
Doped Zno ◽  
Mg Doped ◽  
Comprehensive Study

ABSTRACTMg doped ZnO thin films were prepared by DC/RF magnetron co-sputtering in (Ar+O2) ambient conditions using metallic Mg and Zn targets. We present a comprehensive study of the effects of film thickness on the structural, optical and magnetic properties. Room temperature ferromagnetism was observed in the films and the saturation magnetization (MS) increases at first as the film’s thickness increases and then decreases. The MS value as high as ∼15.76 emu/cm3 was achieved for the Mg-doped ZnO film of thickness 120 nm. The optical band gap of the films determined to be in the range 3.42 to 3.52 eV.

Ferromagnetic and Optical Properties of Partially Cu-Doped ZnO Films

2009 ◽  
Vol 64 (11) ◽  
pp. 765-768 ◽  
Author(s):  
Fan-Yong Ran ◽  
Masaki Tanemura ◽  
Yasuhiko Hayashi ◽  
Norihiro Ide ◽  
Masao Imaoka ◽  
...  
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Room Temperature Ferromagnetism ◽  
Intrinsic Property ◽  
Zno Films ◽  
Cu Doping ◽  
Partial Area ◽  
Doped Zno

Wurtzite structure ZnO films (3×3 mm2) with a partial-area Cu doping were successfully prepared using a micro-area Ar+-ion beam (~ 380 μm in diameter) and a simultaneous Cu supply at room temperature. A Cu2O phase was formed in the ZnO films by Cu doping. The partially Cu-doped ZnO films exhibited room-temperature ferromagnetism (RTFM) with a saturation magnetization of 1.6×10−5 emu and a coercive field of 40 Oe. Since Zn, Cu, and their compounds are not ferromagnetic, the observed RTFMis attributed to the intrinsic property of Cu-doped ZnO films. As confirmed by the low temperature photoluminescence (PL) spectra, no serious optical damage was recognized in the region without Ar+-ion irradiation. Thus, it was believed that the micro-area Ar+-ion irradiation with a simultaneous Cu supply was promising to integrate the magnetic and optical properties of ZnO-based materials.

Room-temperature ferromagnetism of Cu-doped ZnO films deposited by helicon magnetron sputtering

2009 ◽  
Vol 246 (6) ◽  
pp. 1243-1247 ◽  
Author(s):  
Fan-Yong Ran ◽  
Masao Imaoka ◽  
Masaki Tanemura ◽  
Yasuhiko Hayashi ◽  
Tun-Seng Herng ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Films ◽  
Doped Zno
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