Defects at the Interface of GaAsxP1−x/Gap Grown by Vapor Phase Epitaxy

1989 ◽  
Vol 148 ◽  
Author(s):  
Seiji Takeda ◽  
M. Hirata ◽  
H. Fujita ◽  
T. Sato ◽  
K. Fujii
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystal Growth ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Interface Region ◽  
Compositional Variation ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Epitaxial Crystal Growth

ABSTRACTDefects and microstructures in a ternary GaAsxP−x compound have been studied by transmission electron microscopy. The compound was grown on a (100) GaP substrate by vapor phase epitaxial. Crystal growth striation contrast was detected in a TEM image. This contrast was explained by local compositional variation of As and P. The distribution of misfit dislocations in the interface region was also studied.

Transmission electron microscopy of GaAs permeable base transistor structures grown by vapor phase epitaxy

1983 ◽  
Vol 54 (6) ◽  
pp. 3554-3560 ◽  
Author(s):  
B. A. Vojak ◽  
J. P. Salerno ◽  
D. C. Flanders ◽  
G. D. Alley ◽  
C. O. Bozler ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Transmission Electron

scholarly journals Асимметрия дефектной структуры полуполярного GaN, выращенного на Si(001)

2018 ◽  
Vol 44 (20) ◽  
pp. 53
Author(s):  
А.Е. Калмыков ◽  
А.В. Мясоедов ◽  
Л.М. Сорокин
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gallium Nitride ◽  
Epitaxial Layer ◽  
Vapor Phase ◽  
Defect Structure ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Transmission Electron

AbstractThe defect structure of a thick (~15 μm) semipolar gallium nitride (GaN) layer grown by hydride–chloride vapor phase epitaxy on a Si(001) substrate with buffer layers has been studied by transmission electron microscopy. The asymmetry of the defect structure of GaN epilayer has been revealed and analyzed. The influence of this asymmetry on the rate of decrease in the density of threading dislocations in the growing epitaxial layer is discussed.

scholarly journals Investigation of Misfit Dislocation Configurations in Mbe-Grown InGaAs Layers on Misaligned GaAs (001) Substrates

1992 ◽  
Vol 283 ◽  
Author(s):  
P. Werner ◽  
N. D. Zakharov ◽  
Y. Chen ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Roughness ◽  
Crystal Growth ◽  
Three Dimensional ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
20 Nm ◽  
Thick Layers ◽  
Dimensional Crystal

ABSTRACTThe configurations of misfit dislocations in In0.2Ga0.8As/GaAs(001) hetero structures grown on slightly misoriented substrates was investigated by transmission electron microscopy (TEM). Layers 6 nm, 20 nm and 40 nm thick were grown by MBE. The substrate was tilted in [110], [110], [120], [210] and [010] directions at angles between 0° and 10°. Only in the 40 nm thick layers networks of 60° and 90° dislocations were formed. Misfit dislocations were found at the interface in <110> directions. In the substrate tilting range between 0° and 4° the changes in dislocation density can be explained by the differentcharacter of α and β dislocations. For a substrate tilting above 6° the different dislocation sets show an increased anisotropy. The misfit dislocations at the interface were decorated by In atoms. The influence of three-dimensional crystal growth on increasing surface roughness is discussed.

Influence of doping on crystal growth, structure and optical properties of nanocrystalline CaTiO3: a case study using small-angle neutron scattering

2015 ◽  
Vol 48 (3) ◽  
pp. 836-843 ◽  
Author(s):  
Oindrila Mondal ◽  
Manisha Pal ◽  
Ripandeep Singh ◽  
Debasis Sen ◽  
Subhasish Mazumder ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Properties ◽  
Crystal Growth ◽  
Small Angle Neutron Scattering ◽  
Ionic Radius ◽  
Ionic Radii ◽  
Growth Structure ◽  
Transmission Electron ◽  
The Difference

The effect of dopant size (ionic radius) on the crystal growth, structure and optical properties of nanocrystalline calcium titanate, CaTiO3(CTO), have been studied using small-angle neutron scattering. X-ray diffraction, along with high-resolution transmission electron microscopy, confirms the growth of pure nanocrystalline CTO. Rietveld analysis reveals that the difference of ionic radii between dopant and host ions induces strain within the lattice, which significantly affects the lattice parameters. The induced strain, due to the difference of ionic radii, causes the shrinkage of the optical band gap, which is manifested by the redshift of the absorbance band. Mesoscopic structural analysis using scattering techniques demonstrates that the ionic radius of the dopant influences the agglomeration behaviour and particle size. A high-resolution transmission electron microscopy study reconfirms the formation of pure highly crystalline CTO nanoparticles.

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