Identification of Radiation-Induced Defects in Si:Al

MRS Proceedings ◽

10.1557/proc-163-277 ◽

1989 ◽

Vol 163 ◽

Cited By ~ 1

Author(s):

Ya.I. Latushko ◽

V.V. Petrov

Keyword(s):

Energy Level ◽

Spectral Range ◽

Infrared Absorption ◽

Uniaxial Stress ◽

Migration Energy ◽

Stress Measurements ◽

Type Defect ◽

Radiation Induced ◽

Induced Defects

AbstractRadiation-induced defects (RD) in Si.:Al have been investigated by means of infrared absorption (IRA) and photoluminescence (PL) methods. It has been found that the main Al containing RD in electron-irradiated Si is an interstitial Al atom (Al1). In the process of annealing at about 225 °C the production of Al1-Al1 pairs takes place. The activatin energy of this RD production is 0.95 eV, which corresponds to Al1 migration energy along hexagonal interstitials. Al1 is shown to be a two - charge donor with the energy level E(+/++) = Ev + 0.20 eV. Besides the above mentioned defect as well as acceptor type defect with Ev + 0.21 eV level a number of other defects has been revealed in neutron-irradiated Si:Al. These centers give rise to a great number of IRA and PL lines in the spectral range from 0.1 to 1.2 eV. The classification of the observed defects has been done on the basis of the annealing results and uniaxial stress measurements.

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Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.131-133.363 ◽

2007 ◽

Vol 131-133 ◽

pp. 363-368 ◽

Cited By ~ 10

Author(s):

Vladimir P. Markevich ◽

Anthony R. Peaker ◽

I.F. Medvedeva ◽

Vasilii E. Gusakov ◽

L.I. Murin ◽

...

Keyword(s):

Energy Level ◽

Deep Level ◽

Stable Configuration ◽

Annealing Behaviour ◽

Chemical Modelling ◽

Radiation Induced ◽

Defect Reactions ◽

Annealing Study ◽

Transient Spectroscopy ◽

Induced Defects

The influence of Cu contamination on radiation-induced defect reactions in n-type Czochralski-grown silicon (Cz-Si) crystals has been studied by means of the Hall effect technique, deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS with supporting theoretical modeling of defects. It is found that the contamination of Cz-Si samples with Cu does not influence significantly the energy spectrum and introduction rates of the principal electrically active defects induced by electron irradiation. The vacancy-oxygen (VO) centre, divacancy (V2) and a complex consisting of a silicon self-interstitial with the oxygen dimer (IO2) are found to be the dominant radiation-induced defects in Cu-contaminated samples as well as in uncontaminated ones. An isochronal annealing study has shown that the presence of Cu affects the annealing behaviour of the vacancy-related defects. In Cu-doped samples the VO centre disappears upon annealing at significantly lower temperatures (175-250°C) compared to those of the VO disappearance in the uncontaminated samples (300-375°C). The disappearance of the VO centres in the Cu-doped samples occurs simultaneously with an anti-correlated introduction of a defect with an energy level at about Ec- 0.60 eV. It is suggested that this defect is formed by the interaction of a mobile Cu atom with the VO complex. According to results of quantum-chemical modelling, in the most stable configuration of the Cu-VO defect a Cu atom occupies a tetrahedral interstitial position nearest to the elongated Si-Si bond of the VO centre. The presence of the Cu atom is found to result in the further elongation of the Si-Si bond and a shift of the VO acceptor level to the middle of the gap. The annealing behaviour of V2 has also been found to be different in the irradiated Cu-doped samples compared to that in the uncontaminated ones. The most probable reason for this difference is an interaction of mobile Cu atoms with di-vacancies. An energy level at about Ec-0.17 eV has been tentatively assigned to a complex consisting of a Cu atom and a di-vacancy.

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Midfacial Reconstruction and Radiation: Case Report and Review of the Literature

Craniomaxillofacial Trauma & Reconstruction ◽

10.1055/s-0030-1262956 ◽

2010 ◽

Vol 3 (3) ◽

pp. 137-140

Author(s):

Gregory R.D. Evans ◽

Ara Salibian ◽

Thomas Scholz

Keyword(s):

Free Tissue Transfer ◽

Local Flaps ◽

Review Of The Literature ◽

Aesthetic Outcome ◽

Tissue Healing ◽

Microvascular Flap ◽

Radiation Induced ◽

Effects Of Radiation ◽

Induced Defects

Midfacial radiation-induced defects usually involve the bony structures and require composite reconstruction. A 36-year-old male patient with a midfacial defect due to radiation and failure of local flaps was referred to us and treated successfully with a microvascular flap. This case is reported in correspondence with a literature review of the classification of midfacial defects, choice of treatments, and outcomes of different reconstructive options. The deleterious effects of radiation on tissue healing and the functional and aesthetic outcome of reconstruction are discussed. Midfacial defects that are refractory to treatment with local flaps are best treated with microvascular free tissue transfer.

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Spectral hole burning and uniaxial stress study of radiation‐induced defects in diamond

Journal of Applied Physics ◽

10.1063/1.362469 ◽

1996 ◽

Vol 79 (11) ◽

pp. 8290-8293 ◽

Cited By ~ 7

Author(s):

A. Osvet ◽

V. Palm ◽

I. Sildos

Keyword(s):

Uniaxial Stress ◽

Hole Burning ◽

Spectral Hole Burning ◽

Spectral Hole ◽

Stress Study ◽

Radiation Induced ◽

Induced Defects

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Implantation of Deuterium and Helium Ions into a Tungsten-Coated Composite Structures

Ukrainian Journal of Physics ◽

10.15407/ujpe65.1.61 ◽

2020 ◽

Vol 65 (1) ◽

pp. 61

Author(s):

V. V. Bobkov ◽

L. P. Tishchenko ◽

Yu. I. Kovtunenko ◽

R. I. Starovoytov ◽

Yu. E. Logachev ◽

...

Keyword(s):

Thermal Desorption ◽

Composite Structures ◽

Heating Temperature ◽

Thermal Desorption Spectroscopy ◽

Irradiation Condition ◽

Helium Ions ◽

Radiation Induced ◽

Induced Defects ◽

Post Implantation

The capture, retention, and thermal desorption of deuterium and helium ions with medium energies implanted into tungsten-coated multilayer functional structures and the formation of corresponding radiation-induced damages in the crystal lattice of the tungsten coatings of those structures have been studied making use of the thermal desorption spectroscopy and electron microscopy methods. The behavior of deuterium and helium in the examined materials and its dependence on the post-implantation heating temperature, the dose of irradiation with D+ and He+ ions, and the irradiation condition – separate (making use of ions of only one kind) or sequential (making use of ions of both kinds) – are analyzed. A classification of radiation-induced defects and mechanisms of their annealing are proposed.

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Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173595 ◽

1990 ◽

Vol 48 (4) ◽

pp. 92-93

Author(s):

H. Watanabe ◽

B. Kabius ◽

B. Roas ◽

K. Urban

Keyword(s):

Defect Formation ◽

Ion Irradiation ◽

High Resolution Electron Microscopy ◽

Structural Disorder ◽

Flux Lines ◽

Pinning Effect ◽

Magnetic Flux Lines ◽

Resolution Electron ◽

Radiation Induced ◽

Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

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