Electric-field modulation of a Bi-Sr-Ca-Cu-O film with a polymer film as an insulator

AbstractWe fabricated the multi layered structure with Au gate electrode/polymer film/Bi-Sr-Ca-Cu-O film to study the electric-field control of high Tc superconductor. A Bi-Sr-Ca-Cu-O(BSCCO) film was fabricated using an ion beam sputtering technique. The plasma polymerization using trif luoroethane gas was used to make the gate insulator. The patterning of the BSCCO film was carried out using an ion beam etching technique. The supercurrent of the structure decreased when the gate voltage was applied to the gate electrode.

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Elecitrical Properties of Ion Beam Sputtering Grown Epitaxial Yttria Stabilized Zirconia FIlms on Silicon

MRS Proceedings ◽

10.1557/proc-198-577 ◽

1990 ◽

Vol 198 ◽

Author(s):

P. Hesto ◽

C. Pellet ◽

C. Schwebel ◽

E. Dupont-Nivet ◽

A.Le Noxaic

Keyword(s):

Electric Field ◽

Ion Beam ◽

Dielectric Strength ◽

Yttria Stabilized Zirconia ◽

Flat Band ◽

Ion Beam Sputtering ◽

Stabilized Zirconia ◽

Large Area ◽

Beam Sputtering ◽

Valence Bands

ABSTRACTYttria stabilized zirconia (YSZ) films have been characterized. The refractive index measured by ellipsometry is about 2.1. The breakdown electric field is greater than 4MV/cm for small area capacitors with a decrease for large area capacitors. This dielectric strength is weakly dependent on the film thickness within the range 0.2-1.lμm. The analysis of the 1MHz C(V) curves by the Terman method leads to a density of interface states of the order of 1012cm−2eV−1 in the middle of the bandgap with an increase near the conduction and the valence bands. The sensitivity of zirconia to the irradiations has been characterized by analysing 1MHz C(V). With or without electric field applied during the irradiations, the Flat-Band voltage shifts are lower for YSZ films than for thermal silicon dioxide films (2 times smaller).

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Etching of red blood cells by means of ion beam sputtering

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010008105x ◽

1978 ◽

Vol 36 (2) ◽

pp. 38-39

Author(s):

Kiichi Hojou ◽

Hiroshi Fujita ◽

Masamichi Ito ◽

Tetsuyuki Hirahata ◽

Koichi Kanaya

Keyword(s):

Red Blood Cells ◽

Blood Cells ◽

Ion Beam ◽

Cell Structure ◽

Rf Sputtering ◽

Etching Process ◽

Ion Beam Sputtering ◽

Ion Etching ◽

Ion Beam Etching ◽

Beam Sputtering

Ion etching techniques have recently been utilized in attempts to reveal subsurface cell structure in the scanning electro microscope. There has, however,been some difficulties indistingushing infracellar structure from artifacts and comtamination produced by the ion etching process.In order to avoid thermal defects caused by conventional etching processes of DC- or rf-sputtering ion beam etching can be used to study biological specimens. In this case, and in addition to using an ion beam which is well- collimated and highly accelerated, the specimen must be both cooled and rotated during processing. Using this procedure on red blood cells examined by SEM, details of their structure were revealed. However, the cone-like structures reported by several previous investigators were not consistantly observed.It is concluded that this procedure for etching may be more informative than those obtained by other ion etching processes.

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In-Situ Transmission Electron Microscopy for Analysis of Ion-Beam-Growth Processes

MRS Proceedings ◽

10.1557/proc-388-405 ◽

1995 ◽

Vol 388 ◽

Author(s):

Vladimir V. Pankov ◽

Nikolai E. Levchuk ◽

Anatoly P. Dostanko

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Transmission Electron Microscopy Analysis ◽

Ion Beam Etching ◽

Transmission Electron ◽

Beam Sputtering ◽

Electron Microscopy Analysis

AbstractTwo types of systems for in situ transmission electron microscopy analysis of ion-beam etching, ion-beam sputtering and ion-beam assisted deposition are reported. their design, operational features and some applications are presented. Radiation-stimulated diffusion in Mo-Si heterostructure, early growth of ion-beam sputtered in-Sn, in-Sn-O, ZnS:Mn films and recrystallization of ln-Sn-O films during vacuum post-annealing are studied.

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Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071053 ◽

1973 ◽

Vol 31 ◽

pp. 122-123

Author(s):

J. S. Maa ◽

Thos. E. Hutchinson

Keyword(s):

Epitaxial Growth ◽

Film Growth ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Microscopy Technique ◽

Direct Observations ◽

In Situ Electron Microscopy ◽

Beam Sputtering ◽

The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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TEM Study of Co/Pd and Co/Au Multilayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100151015 ◽

1993 ◽

Vol 51 ◽

pp. 1036-1037

Author(s):

A.E.M. De Veirman ◽

F.J.G. Hakkens ◽

W.M.J. Coene ◽

F.J.A. den Broeder

Keyword(s):

Magnetic Anisotropy ◽

Ion Beam ◽

Perpendicular Magnetic Anisotropy ◽

Optical Recording ◽

Magnetic Multilayer ◽

Ion Beam Sputtering ◽

Cross Sectional ◽

Transmission Electron ◽

Beam Sputtering ◽

Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

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Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

MRS Proceedings ◽

10.1557/proc-762-a7.3 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

Z.B. Zhou ◽

G.M. Hadi ◽

R.Q. Cui ◽

Z.M. Ding ◽

G. Li

Keyword(s):

Solar Cell ◽

Ion Beam ◽

Nanocrystalline Silicon ◽

Silicon Films ◽

Chamber Pressure ◽

Ion Beam Sputtering ◽

High Hydrogen ◽

Beam Sputtering ◽

Si Films ◽

Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

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Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

MRS Proceedings ◽

10.1557/proc-775-p9.57 ◽

2003 ◽

Vol 775 ◽

Author(s):

Suk-Ho Choi ◽

Jun Sung Bae ◽

Kyung Jung Kim ◽

Dae Won Moon

Keyword(s):

Quantum Confinement ◽

Radiative Recombination ◽

Ion Beam ◽

Quantum Confinement Effect ◽

Visible Range ◽

Ion Beam Sputtering ◽

Transmission Electron ◽

Si Nanocrystals ◽

Beam Sputtering ◽

Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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