High‐Tc Undoped and Pb‐Doped BI‐SR‐CA‐CU‐O thin Films Prepared by Organometallic Chemical Vapor Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
J. M. Zhang ◽  
H. O Marcy ◽  
L .M. Tonge ◽  
B. W. Wessels ◽  
T. J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Tc ◽  
Metal Organic ◽  
Organic Precursors ◽  
Organometallic Chemical Vapor Deposition

AbstractFilms of the high‐Tc undoped and Pb‐doped Bi‐Sr‐Ca‐Cu‐O (BSCCO) superconductors have been prepared by low pressure organometallic chemical vapor deposition (OMCVD) using the volatile metal‐organic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, and triphenyl bismuth. Factors which influence texture and morphology of the OMCVD‐derived films have been investigated, including the effects of annealing, doping, and substrates.

Organometallic Chemical Vapor Deposition of Strontium Titanate thin Films

1989 ◽  
Vol 168 ◽  
Author(s):  
W. A. Feil ◽  
B. W. Wessels ◽  
L. M. Tonge ◽  
T. J. Marks
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Dielectric Constants ◽  
Silicon Substrates ◽  
Metal Organic ◽  
Organic Precursors ◽  
Organometallic Chemical Vapor Deposition

AbstractSrTiO3 thin films were deposited by low pressure organometallic chemical vapor deposition on silicon substrates using the volatile metal-organic precursors titanium isopropoxide and Sr(dipivaloylmethanate)2. Oxygen and water vapor were used as reactant gases and argon was used as a carrier gas. Growth rates ranging from 0.6–2.1 μm/hr were obtained at 650–800°C. Polycrystalline films were obtained at growth temperatures of 650–750°C, and amorphous films above 750°C. SrTiO3 films deposited on silicon substrates exhibited resistivities greater than 109 Ω-cm and dielectric constants up to 100.

Deposition of high-Tc superconducting Y-Ba-Cu-O thin films at low temperatures using a plasma-enhanced organometallic chemical vapor deposition approach

1990 ◽  
Vol 74 (10) ◽  
pp. 1091-1094 ◽  
Author(s):  
Jing Zhao ◽  
Henry O. Marcy ◽  
Lauren M. Tonge ◽  
Bruce W. Wessels ◽  
Tobin J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
High Tc ◽  
Organometallic Chemical Vapor Deposition

Low pressure organometallic chemical vapor deposition of high-Tc superconducting YBa2Cu3O7−δ films

1989 ◽  
Vol 69 (2) ◽  
pp. 187-189 ◽  
Author(s):  
Jing Zhao ◽  
Klaus-Hermann Dahmen ◽  
Henry O. Marcy ◽  
Lauren M. Tonge ◽  
Bruce W. Wessels ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Tc ◽  
Organometallic Chemical Vapor Deposition

scholarly journals Routes to High‐Tc Superconducting Tl‐Ba‐Ca‐Cu‐O Films Using Organometallic Chemical Vapor Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
Darrin S. Richesonw ◽  
Lauren M. Tonge ◽  
Jing Zhao ◽  
Jiming Zhang ◽  
Henry O. Marcy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Tc ◽  
Metal Organic ◽  
Zero Resistance ◽  
Water Saturated ◽  
Saturated Oxygen ◽  
Organometallic Chemical Vapor Deposition

AbstractFilms of the Tl‐Ba‐Ca‐Cu‐O high‐Tc superconductor can be prepared by several organometallic chemical vapor deposition routes. Two of these involve Ba‐Ca‐Cu‐0 films that are first prepared using the volatile metal‐organic precursors Ba(heptafluorodimethyloctanedionate)2, Ca(dipivaloylmethanate)2, and Cu(acetylacetonate)2‐ Deposition is carried out at a pressure of 5 Torr with argon as the carrier gas and water vapor as the reactant gas. Thallium is next incorporated into these films either by organometallic chemical vapor deposition using Tl(cyclopentadienide) as the source, or by vapor diffusion using bulk Tl‐Ba‐Ca‐Cu‐O as the source. Thallium deposition is carried out at atmospheric pressure with an argon carrier and water‐saturated oxygen reactant gas, followed by rapid thermal annealing. Both procedures yield films that consist primarily of the TlBa2Ca2Cu3Ox phase, have preferential orientation of the Cu‐O planes parallel to the substrate surface, and exhibit onset of superconductivity at ∼125 K with zero resistance by 100 K.

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection
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