Modification of The Near-Surface Region Of Al2O3 By Ion Implantation

1983 ◽  
Vol 24 ◽  
Author(s):  
C. W. White ◽  
G. C. Farlow ◽  
H. Naramoto ◽  
C. J. Mchargue ◽  
B. R. Appleton
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Structural Property ◽  
Surface Region ◽  
Impurity Incorporation ◽  
Near Surface ◽  
Implantation Damage ◽  
Property Changes

ABSTRACTPhysical and structural property changes resulting from ion implantation and thermal annealing of α-A12O3 are reviewed. Emphasis is placed on damage production during implantation, damage recovery during thermal annealing, and impurity incorporation during thermal annealing. Physical and structural property changes caused by ion implantation and annealing are correlated with changes in the mechanical properties.

scholarly journals Microstructure and Mechanical Properties of Ti + N Ion Implanted Cronidur30 Steel

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 427 ◽  
Author(s):  
Jie Jin ◽  
Wei Wang ◽  
Xinchun Chen
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Modification ◽  
Surface Region ◽  
Grazing Incidence ◽  
Bearing Steel ◽  
Near Surface ◽  
X Ray ◽  
Ion Implanted

In this study, Ti + N ion implantation was used as a surface modification method for surface hardening and friction-reducing properties of Cronidur30 bearing steel. The structural modification and newly-formed ceramic phases induced by the ion implantation processes were investigated by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and grazing incidence X-ray diffraction (GIXRD). The mechanical properties of the samples were tested by nanoindentation and friction experiments. The surface nanohardness was also improved significantly, changing from ~10.5 GPa (pristine substrate) to ~14.2 GPa (Ti + N implanted sample). The friction coefficient of Ti + N ion implanted samples was greatly reduced before failure, which is less than one third of pristine samples. Furthermore, the TEM analyses confirmed a trilamellar structure at the near-surface region, in which amorphous/ceramic nanocrystalline phases were embedded into the implanted layers. The combined structural modification and hardening ceramic phases played a crucial role in improving surface properties, and the variations in these two factors determined the differences in the mechanical properties of the samples.

scholarly journals Ion Implantation and Annealing of SrTiO3 and CaTiO3

1987 ◽  
Vol 93 ◽  
Author(s):  
C. W. White ◽  
L. A. Boatner ◽  
J. Rankin ◽  
M. J. Aziz
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Surface Region ◽  
Single Crystal Substrate ◽  
Recrystallization Process ◽  
Near Surface ◽  
Ion Channeling ◽  
Implantation Damage ◽  
Crystal Substrate ◽  
Kinetics Of

ABSTRACTIon implantation damage and thermal annealing results are presented for single crystals of SrTiO3 and CaTiO3. The near-surface region of both of these materials can be made amorphous by low doses (∼1015/cm2 ) of heavy ions (Pb at 540 keV). During annealing, the amorphous implanted region crystallizes epitaxially on the underlying single-crystal substrate. The kinetics of this solid-phase epitaxial recrystallization process have been measured by employing ion channeling techniques.

The Effects of Ion Implantation on the Surface Features of Inconel 600

1985 ◽  
Vol 43 ◽  
pp. 288-289
Author(s):  
John D. Rubio
Keyword(s):  
Grain Boundary ◽  
Ion Implantation ◽  
Nuclear Power ◽  
Power Plants ◽  
Surface Region ◽  
Selective Dissolution ◽  
Boundary Region ◽  
Near Surface ◽  
Inconel 600 ◽  
Steam Generator Tubing

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.

Analytical Electron Microscopy of Ion-Implanted Metals

1985 ◽  
Vol 43 ◽  
pp. 282-285
Author(s):  
D.I. Potter ◽  
M. Ahmed ◽  
K. Ruffing
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Friction And Wear ◽  
Analytical Electron Microscopy ◽  
Chemical Compositions ◽  
Surface Chemical ◽  
Near Surface ◽  
The Past ◽  
Analytical Electron ◽  
Property Changes

Ion implantation, used extensively for the past decade in fabricating semiconductor devices, now provides a unique means for altering the near-surface chemical compositions and microstructures of metals. These alterations often significantly improve physical properties that depend on the surface of the material; for example, catalysis, corrosion, oxidation, hardness, friction and wear. Frequently the mechanisms causing these beneficial alterations and property changes remain obscure and much of the current research in the area of ion implantation metallurgy is aimed at identifying such mechanisms. Investigators thus confront two immediate questions: To what extent is the chemical composition changed by implantation? What is the resulting microstructure? These two questions can be investigated very fruitfully with analytical electron microscopy (AEM), as described below.

Ion Implantation Damage and Annealing in GaSb

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Iyer ◽  
R. Parakkat ◽  
B. Patnaik ◽  
N. Parikh ◽  
S. Hegde
Keyword(s):  
Ion Implantation ◽  
Surface Damage ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Layer ◽  
Implantation Technique ◽  
Near Surface ◽  
Projected Range ◽  
Implantation Damage ◽  
Pb Ions ◽  
Better Than

ABSTRACTIon implantation technique is being investigated as an alternate technique for doping GaSb. Hence an understanding of the production and removal of the damage is essential. In this paper, we report on the damages produced by implantation of Te, Er, Hg and Pb ions into undoped (100) GaSb single crystals and their recovery by Rutherford backscattering (RBS)/channeling. The implantations of 1013 to 1013 ions/cm2 in GaSb were done at liquid nitrogen temperature at energies corresponding to the same projected range of 447Å. A comparison of the damage produced by the different ions and their recovery was made by RBS/channeling along <100> axis of GaSb. Near surface damage equivalent to that of an amorphous layer was observed even at lower doses. Upon annealing at 600°C for 30 sec., the Te implanted samples showed best recovery compared to others (Xmin = 11%), the value of Xmin being better than those normally observed in unimplanted Te-doped substrates.

Evaluating Micromechanical Properties at Surfaces Using Nanoindentation With Finite-Element Modeling

2002 ◽  
Author(s):  
J. A. Knapp ◽  
D. M. Follstaedt ◽  
S. M. Myers
Keyword(s):  
Mechanical Properties ◽  
Finite Element ◽  
Finite Element Modeling ◽  
Mechanical Damage ◽  
Surface Region ◽  
Small Scale ◽  
Surface Layers ◽  
Near Surface ◽  
Element Modeling ◽  
Surface Modified

Detailed finite-element modeling of nanoindentation data is used to obtain accurate mechanical properties of very thin films or surface-modified layers independently of the properties of the underlying substrates. These procedures accurately deduce the yield strength, elastic modulus, and layer hardness, and greatly increase the usefulness of indentation testing with very thin surface layers. Moreover, extraction of the effective Young’s modulus in the near surface region should enable mechanical damage studies on a small scale. This paper presents a brief overview of the procedures involved and illustrates them with He-implanted Ni.

Effects of Silicon Ion Implantation upon Thin Gate Oxide Integrity

1992 ◽  
Vol 262 ◽  
Author(s):  
G. -S. Lee ◽  
J. -G. Park ◽  
S. -P. Choi ◽  
C. -H. Shin ◽  
Y. -B. Sun ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dielectric Breakdown ◽  
Defect Density ◽  
Surface Region ◽  
Gate Oxide ◽  
Near Surface ◽  
Time Dependent Dielectric Breakdown ◽  
Thin Gate Oxide ◽  
Si Ion Implantation ◽  
Gate Oxide Integrity

ABSTRACTIn this study, using oxide breakdown voltage and time-dependent-dielectric breakdown measurements, thermal wave modulated reflectance and chemical etching/optical microscopy, we investigated effects of Si ion implantation upon formation of D-defects and thin gate oxide integrity. Our data show that addition of Si ion implantation with a dose of up to 1013 ions/cm2 improves oxide integrity if the implantation is done at a certain step just before sacrificial oxidation in the Mb DRAM process. However, no improvement in oxide integrity is observed when the same implantation is done on the virgin wafer surfaces at the start of the same Mb DRAM process. We discuss our hypothesis that the improvement in oxide integrity is due to a reduction in the D-defect density in the near-surface region of the wafer.

scholarly journals Nanophase Composites Produced by Ion Implantation: Properties, Problems, and Potential

2000 ◽  
Vol 650 ◽  
Author(s):  
A. Meldrum ◽  
L. A. Boatner ◽  
C. W. White ◽  
R. F. Haglund
Keyword(s):  
Ion Implantation ◽  
Surface Region ◽  
Nanocomposite Materials ◽  
Future Research ◽  
Materials Synthesis ◽  
Research Directions ◽  
Near Surface ◽  
Nanophase Materials ◽  
Future Research Directions ◽  
The Many

ABSTRACTIon implantation has become a versatile and powerful technique for synthesizing nanometer-scale clusters and crystals embedded in the near-surface region of a variety of hosts. The resulting nanocomposite materials often show unique optical, magnetic, and electronic properties. Here we review some of the principal features of this nanophase materials synthesis technique and discuss the outstanding experimental difficulties that currently hamper the development of devices based on the many unique properties of these nanocomposite materials. Possible solutions to these problems and future research directions are discussed.

scholarly journals Nanophase Composites Produced by Ion Implantation: Properties, Problems, and Potential

2000 ◽  
Vol 647 ◽  
Author(s):  
A. Meldrum ◽  
L. A. Boatner ◽  
C. W. White ◽  
R. F. Haglund
Keyword(s):  
Ion Implantation ◽  
Surface Region ◽  
Nanocomposite Materials ◽  
Future Research ◽  
Materials Synthesis ◽  
Research Directions ◽  
Near Surface ◽  
Nanophase Materials ◽  
Future Research Directions ◽  
The Many

AbstractIon implantation has become a versatile and powerful technique for synthesizing nanometer-scale clusters and crystals embedded in the near-surface region of a variety of hosts. The resulting nanocomposite materials often show unique optical, magnetic, and electronic properties. Here we review some of the principal features of this nanophase materials synthesis technique and discuss the outstanding experimental difficulties that currently hamper the development of devices based on the many unique properties of these nanocomposite materials. Possible solutions to these problems and future research directions are discussed.

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