Effect of Growth Conditions on Optical Response of GaAs Grown at Low Substrate Temperature by MBE

ABSTRACTThe effect of growth conditions on the properties of GaAs grown by molecular beam epitaxy at low substrate temperatures has been studied. It has been found that the response time to 100 fsec 830nm light pulses is a function of substrate temperature and arsenic flux. The reason for variation of optical response with growth conditions is related to the nature of the incorporation of excess arsenic. A recent model proposed by Warren and others is invoked to explain the change in optical response with growth conditions. Further substantiation of this model comes from experiments on the annealing of low substrate temperature GaAs which has been doped with silicon.

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On the substrate temperature dependence of the properties of In0.52Al0.48As/InP structures grown by molecular beam epitaxy

Journal of Materials Research ◽

10.1557/jmr.1996.0275 ◽

1996 ◽

Vol 11 (9) ◽

pp. 2158-2162 ◽

Cited By ~ 1

Author(s):

S.F. Yoon ◽

Y. B. Miao ◽

K. Radhakrishnan ◽

S. Swaminathan

Keyword(s):

Molecular Beam Epitaxy ◽

Substrate Temperature ◽

Molecular Beam ◽

Lattice Mismatch ◽

Strong Dependence ◽

X Ray Diffraction ◽

Lattice Constants ◽

Wide Range ◽

Energy Peak ◽

Substrate Temperatures

Growth of In0.52Al0.48As epilayers on InP(100) substrates by molecular beam epitaxy at a wide range of substrate temperatures (470–550 °C) is carried out. Low temperature photoluminescence (PL) and double-axis x-ray diffraction (XRD) measurements showed a strong dependence of the PL and XRD linewidths and lattice mismatch on the substrate temperature. Minimum PL and XRD linewidths and lattice mismatch were found to occur at substrate temperatures of between ≈500 and 520 °C under the beam fluxes used in this study. The XRD intensity ratios (Iepi/Isub) were generally higher within the same substrate temperature range at which the lattice mismatch was the lowest. XRD rocking curves of samples grown at low temperatures showed the main epilayer peak to be composed of smaller discrete peaks, suggesting the presence of regions with different lattice constants in the material. PL spectra taken at increasing temperatures showed the quenching of the main emission peak followed by the evolution of a distinct lower energy peak which is possibly associated with deep lying centers.

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MBE Growth of InSb Based Device Structures onto InSb(111)A,(111)B and InGaSb(111)A Substrates

MRS Proceedings ◽

10.1557/proc-450-103 ◽

1996 ◽

Vol 450 ◽

Author(s):

A D Johnson ◽

R Jefferies ◽

G J Pryce ◽

J A Beswick ◽

T Ashley ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Substrate Temperature ◽

Molecular Beam ◽

Growth Conditions ◽

Optimum Growth ◽

Mbe Growth ◽

Light Emitting ◽

Dopant Incorporation ◽

Device Structures ◽

Lattice Matched

ABSTRACTWe report on the optimum growth conditions for Molecular Beam Epitaxy (MBE) growth of InSb onto InSb (111)A and (111)B substrates. It was found that for (111)A substrates the optimum epilayer morphology was obtained for growth temperatures above 385°C and with a Sb:In ratio of 1.5:1. In contrast, for the (111)B surface, best morphology was found for growth temperatures above 385°C but with V:III ratio of ∼7.0:1. In both cases the dopant incorporation was found to be the same as the (100) surface and did not particularly depend either on V:III ratio or substrate temperature. We also describe the device characteristics of InAlSb light emitting diodes (LEDs) grown lattice matched onto ternary InGaSb(111)A substrates using the optimized growth conditions obtained.

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Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300002386 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 155-160

Author(s):

Yuichi Hiroyama ◽

Masao Tamura

Keyword(s):

Substrate Temperature ◽

Molecular Beam ◽

Growth Conditions ◽

Photoluminescence Intensity ◽

Cell Temperature ◽

Si Substrates ◽

Gas Source ◽

Cubic Gan ◽

Formation Conditions ◽

Substrate Temperatures

We have investigated the growth conditions of cubic GaN (β-GaN) layers on very thin SiC-covered Si(001) by using gas-source molecular beam epitaxy as functions of SiC layer thickness, Ga-cell temperature and substrate temperature. Under the present SiC formation conditions on Si substrates by carbonization using C2H2 gas, the SiC layers with the thickness between 2.5 and 4 nm result in the epitaxial growth of β-GaN on thus SiC-formed Si substrates. At the highest GaN growth rate of 110 nm/h ( a Ga-cell temperature of 950 °C), β-GaN layers grown at a substrate temperature of 700 °C show a nearly flat surface morphology and the fraction of included hexagonal GaN becomes negligible when compared to the results of β-GaN layers grown under other conditions of Ga-cell and substrate temperatures. Thus obtained β-GaN films have good performance in photoluminescence intensity although the FWHM of band-edge recombination peak is still wider (137 meV) than the reported values for the β-GaN on 3C-SiC and GaAs.

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Characterization of Tin Oxide Grown by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/opl.2014.305 ◽

2014 ◽

Vol 1633 ◽

pp. 13-18

Author(s):

G. Medina ◽

P.A. Stampe ◽

R.J. Kennedy ◽

R.J. Reeves ◽

G.T. Dang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Substrate Temperature ◽

Tin Oxide ◽

Molecular Beam ◽

Growth Conditions ◽

Electrical Measurements ◽

Device Structure ◽

Metal Semiconductor Metal ◽

P Type

ABSTRACTWe describe the characteristics of a series of thin film tin oxide films grown by plasma-assisted molecular beam epitaxy on r-plane sapphire substrates over a range of flux and substrate temperature conditions. A mixture of both SnO2 and SnO are detected in several films, with the amount depending on growth conditions, most particularly the substrate temperature. Electrical measurements were not possible on all samples due to roughness related issues with contacting, but at least one film exhibited p-type characteristics depending on measurement conditions, and one sample exhibited significant persistent photoconductivity upon ultraviolet excitation in a metal-semiconductor-metal device structure.

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Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

MRS Proceedings ◽

10.1557/proc-537-g3.9 ◽

1998 ◽

Vol 537 ◽

Cited By ~ 1

Author(s):

Yuichi Hiroyama ◽

Masao Tamura

Keyword(s):

Substrate Temperature ◽

Molecular Beam ◽

Growth Conditions ◽

Photoluminescence Intensity ◽

Cell Temperature ◽

Si Substrates ◽

Gas Source ◽

Cubic Gan ◽

Formation Conditions ◽

Substrate Temperatures

We have investigated the growth conditions of cubic GaN (β-GaN) layers on very thin SiC-covered Si(001) by using gas-source molecular beam epitaxy as functions of SiC layer thickness, Ga-cell temperature and substrate temperature. Under the present SiC formation conditions on Si substrates by carbonization using C2H2, gas, the SiC layers with the thickness between 2.5 and 4 nm result in the epitaxial growth of β-GaN on thus SiC-formed Si substrates. At the highest GaN growth rate of 110 nm/h (a Ga-cell temperature of 950 °C), β-GaN layers grown at a substrate temperature of 700 °C show a nearly flat surface morphology and the fraction of included hexagonal GaN becomes negligible when compared to the results of β-GaN layers grown under other conditions of Ga-cell and substrate temperatures. Thus obtained β-GaN films have good performance in photoluminescence intensity although the FWHM of band-edge recombination peak is still wider (137 meV) than the reported values for the β-GaN on 3C-SiC and GaAs.

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Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

MRS Proceedings ◽

10.1557/proc-241-199 ◽

1991 ◽

Vol 241 ◽

Author(s):

Bijan Tadayon ◽

Mohammad Fatemi ◽

Saied Tadayon ◽

F. Moore ◽

Harry Dietrich

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Substrate Temperature ◽

Molecular Beam ◽

Electrical Characterization ◽

Physical Characteristics ◽

Hall Measurements ◽

Undoped Material ◽

Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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