scholarly journals Photoluminescence of Silicon Nanostructures Formed by Ion Beam Implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
D. A. Redman ◽  
D. M. Follstaedt ◽  
T. Guilinger ◽  
M. Kelly
Keyword(s):  
Quantum Confinement ◽  
Ion Beam ◽  
Subsurface Layer ◽  
Blue Shift ◽  
Nanometer Scale ◽  
Silicon Nanostructures ◽  
Porous Si ◽  
Ion Beam Implantation ◽  
Scale Structures ◽  
Confinement Model

ABSTRACTA new method was used to fabricate nanometer-scale structures in Si for photoluminescence (PL) studies. He ions were implanted to form a dense subsurface layer of small cavities (1–8 nm diameters). The implanted specimens were either annealed in H or anodized with HF to evaluate the quantum confinement model for PL from porous Si. Incomplete passivation apparently prevented PL in the H-annealed specimens. Implantation combined with anodization produced a substantial blue shift relative to anodization alone, which is consistent with quantum confinement.

SIMPLE QUANTUM CONFINEMENT THEORY FOR EXCITON IN INDIRECT GAP NANOSTRUCTURES

2000 ◽  
Vol 14 (15) ◽  
pp. 1559-1566 ◽  
Author(s):  
NGUYEN THI VAN OANH ◽  
NGUYEN AI VIET
Keyword(s):  
Optical Properties ◽  
Simple Model ◽  
Quantum Confinement ◽  
Tight Binding ◽  
Blue Shift ◽  
Analytic Solutions ◽  
Silicon Nanostructures ◽  
Tight Binding Approximation ◽  
Mass Approximation ◽  
Simple Quantum

We propose in this work a simple quantum confinement theory for excitons based on the effective mass approximation, for investigation of optical properties of indirect gap nanostructures. We show that using this simple model, we can get the analytic solutions and reobtain the main tight-binding approximation numerical results of Hill et al.1 for silicon nanostructures: blue shift of band gap and increase overlap between the states at the band edges when the nanostructures size in decreased.

Silicon Nanostructures in Si-Based Light-Emithing Devices

1993 ◽  
Vol 298 ◽  
Author(s):  
Fereydoon Namavar ◽  
R.F. Pinizzotto ◽  
H. Yang ◽  
N. Kalkhoran ◽  
P. Maruska
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Silicon Nanostructures ◽  
Porous Si ◽  
Cross Sectional ◽  
Quantum Size ◽  
Visible Wavelengths ◽  
Si Nanostructures

AbstractHigh resolution cross-sectional electron microscopy and electron diffraction of an np heterojunction porous Si device, capable of emitting light at visible wavelengths, clearly indicates the presence of Si nanostructures within the quantum size regime. These results indicate that the quantum confinement effect is at least partially responsible for photoluminescence at visible wavelengths.

Effect of Preparation Conditions on the Silicon L-Edge In Electrochemically Prepared Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
T. Van Buuren ◽  
T. Tiedje ◽  
W. Weydanz
Keyword(s):  
Electronic Structure ◽  
High Resolution ◽  
Porous Silicon ◽  
Quantum Confinement ◽  
Light Exposure ◽  
Blue Shift ◽  
Bulk Silicon ◽  
Preparation Conditions ◽  
P Type ◽  
Confinement Model

AbstractHigh resolution measurements of the silicon L-edge absorption in electrochemically prepared porous silicon show that the absorption threshold is shifted to higher energy relative to bulk silicon, and that the shift is dependent on how the porous silicon is prepared. When the porous silicon is made from n-type material with light exposure, the blue shift increases logarithmically with the anodizing current. Porous silicon prepared by anodizing p-type silicon exhibits a blue shift in the L-edge which increases with the time spent in the HF solution after the anodizing potential is turned off. The data are consistent with the quantum confinement model for the electronic structure of porous silicon.

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