Electronic States in Cd1−xZnxTe/CdTe Strained Layer Coupled Double Quantum Wells and their Photoluminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
Tiesheng Li ◽  
H. J. Lozykowski

ABSTRACTExperimental and theoretical investigations of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice mismatched heterostructure were characterized by photoluminescence (PL), PL excitation and polarization spectroscopies. The influence of electrical field on exciton states in the strained layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.

1987 ◽  
Vol 102 ◽  
Author(s):  
Y. J. Chen ◽  
Emil S. Koteles ◽  
B. Elman ◽  
C. A. Armiento

ABSTRACTWe present a detailed experimental study of the influence of electric fields on exciton states in a GaAs/AlGaAs coupled double quantum well structure and discuss the advantages of using this novel structure. The coupling of electronic states in the two quantum wells, due to the narrowness of the barrier between them, leads to an enhancement of the quantum-confined Stark effect (by as much as five times that of the single quantum well case). From the measured energies of the exciton transitions, splittings of the levels in a coupled double quantum well structure were derived without recourse to a theoretical model.


2016 ◽  
Vol 30 (13) ◽  
pp. 1642011 ◽  
Author(s):  
I. Filikhin ◽  
A. Karoui ◽  
B. Vlahovic

Electron localization and tunneling in laterally distributed double quantum well (DQW) and triple quantum well (TQW) are studied. Triangular configuration for the TQWs as well as various quantum well (QW) shapes and asymmetry are considered. The effect of adding a third well to a DQW is investigated as a weakly coupled system. InAs/GaAs DQWs and TQWs were modeled using single subband effective mass approach with effective potential simulating the strain effect. Electron localization dynamics in DQW and TQW over the whole spectrum is studied by varying the inter-dot distances. The electron tunneling appeared highly sensitive to small violations of the DQW mirror symmetry. We show that the presence of a third dot increases the tunneling in the DQW. The dependence of the tunneling in quantum dot (QD) arrays on inter-dot distances is also discussed.


2004 ◽  
Vol 46 (1) ◽  
pp. 153-156 ◽  
Author(s):  
V. V. Popov ◽  
T. V. Teperik ◽  
O. V. Polischuk ◽  
X. G. Peralta ◽  
S. J. Allen ◽  
...  

2000 ◽  
Vol 29 (10) ◽  
pp. 659-662 ◽  
Author(s):  
S. Sarkar ◽  
P. Chakraborty ◽  
M. K. Sanyal ◽  
F. Caccavale ◽  
B. M. Arora

1994 ◽  
Vol 08 (18) ◽  
pp. 1075-1096 ◽  
Author(s):  
W. E. MCMAHON ◽  
T. MILLER ◽  
T.-C. CHIANG

Noble-metal multilayer systems have been grown and examined with angle-resolved photoemission. Surface states, and single and double quantum wells have been studied experimentally; the results can be explained with a simple theoretical model based upon Bloch electrons. In this paper, we will present our model and then give a description of some experimental studies which utilize the model. In particular, we will consider double-quantum-well systems which can be used to examine basic aspects of electronic confinement, layer–layer coupling, and translayer interaction through a barrier.


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