Persistent Photoconductivity in p-Type GaN Epilayers and n-Type AlGaN/GaN Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
J. Z. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
M. A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Metal Organic ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure ◽  
P Type ◽  
Organic Chemical Vapor Deposition

ABSTRACTPersistent photoconductivity (PPC) effect has been observed in p-type GaN epilayers grown both by metal-organic chemical vapor deposition (MOCVD) and reactive molecular beam epitaxy (MBE) as well as in a two-dimensional electron gas (2DEG) system formed by an AlGaN/GaN heterostructure grown by MOCVD. Its properties have been investigated at different conditions.

Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition

1998 ◽  
Vol 37 (Part 1, No. 8) ◽  
pp. 4595-4602 ◽  
Author(s):  
Aurangzeb Khan ◽  
Mohd Zafar Iqbal ◽  
Umar Saeed Qurashi ◽  
Masafumi Yamaguchi ◽  
Nasim Zafar ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Alpha Radiation ◽  
Metal Organic ◽  
Radiation Induced ◽  
P Type ◽  
Organic Chemical Vapor Deposition

Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

2009 ◽  
Vol 1198 ◽  
Author(s):  
Neeraj Nepal ◽  
M. Oliver Luen ◽  
Pavel Frajtag ◽  
John Zavada ◽  
Salah M. Bedair ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
Organic Chemical ◽  
Ferromagnetic Behavior ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
P Type ◽  
Organic Chemical Vapor Deposition

AbstractWe report on metal organic chemical vapor deposition growth of GaMnN/p-GaN/n-GaN multilayer structures and manipulation of room temperature (RT) ferromagnetism (FM) in a GaMnN layer. The GaMnN layer was grown on top of a n-GaN substrate and found to be almost always paramagnetic. However, when grown on a p-type GaN layer, a strong saturation magnetization (Ms) was observed. Ms was almost doubled after annealing demonstrating that the FM observed in GaMnN film is carrier-mediated. To control the hole concentration of the p-GaN layer by depletion, GaMnN/p-GaN/n-GaN multilayer structures of different p-GaN thickness (Xp) were grown on sapphire substrates. We have demonstrated that the FM depends on the Xp and the applied bias to the GaN p-n junction. The FM of these multilayer is independent on the top GaMnN layer thickness (tGaMnN) for tGaMnN >200 nm and decreases for tGaMnN < 200 nm. Thus the room temperature FM of GaMnN i-p-n structure can also be controlled by changing Xp and tGaMnN in the GaMnN i-p-n structures.

Deep Impurities in AlGaAs Grown by MOCVD Using Different Hydrogen and Nitrogen as Carrier Gases

1995 ◽  
Vol 378 ◽  
Author(s):  
J. C. Chen ◽  
Z. C. Huang ◽  
Bing Yang ◽  
H. K. Chen ◽  
K. J. Lee
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
Background Concentrations ◽  
Order Of Magnitude ◽  
Metal Organic ◽  
Carrier Gases ◽  
P Type ◽  
Organic Chemical Vapor Deposition ◽  
Source Materials ◽  
Concentration Of Impurities

AbstractA study was carried out to characterize the deep impurities in AlxGa1-x As grown by metal-organic chemical vapor deposition (MOCVD) using different carrier gases. Since AlxGai1-x As is very sensitive to any impurities, especially moisture and oxygen, in the growth process, the concentration of impurities in AlxGai1-xAs can serve as a measure of the purity of carrier gases. The undoped AlGaAs layers grown by using H2 have n-type background concentrations from 3×1015 to 10×1015/cc. The concentrations of oxygen-related traps (Ec−0.53 and 0.7 eV) are 0.2−9×1013 and 3.4−5×1014/cc for Pd- and Li-purified H2, respectively. Low-temperature photoluminescence (PL) measurements show better PL efficiency in samples grown by using Pd- purified H2. AlxGa1-xAs grown by using N2 is p-type (p∼6×1016/cc) with an oxygen-related trap and two hole traps. The concentration of oxygen-related trap is more than one order of magnitude higher than that of AlGaAs using Pd-purified H2. The memory effect due to impurities from carrier gas left in source materials is also studied.

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