Formation of Counter Doped Shallow Junctions by Boron and Antimony Implantation and Codiffusion in Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
S. Solmi ◽  
R. Canteri
Keyword(s):  
Si Substrate ◽  
Junction Region ◽  
Simulation Code ◽  
Acceptor Interaction ◽  
Thermal Budget ◽  
Enhanced Diffusion ◽  
Shallow Junctions ◽  
Donor Acceptor ◽  
Simulation Results ◽  
Good Agreement

ABSTRACTVery shallow p+/n junctions (lower than 60 nm) have been fabricated by implanting Sb and subsequently BF2, at a higher dose, in a n-type Si substrate. The preamorphisation with Sb avoids the B channeling and increases the n-type doping in the junction region, thus confining the depth of the p layer. Furthermore, both the transient enhanced diffusion, being the B implanted in a preamorphized layer, and the standard diffusion, due to the pairing between donors and acceptors, are strongly reduced. This procedure allows us to obtain very shallow junctions even after annealings with relatively high thermal budget, like 800 C/8h, or 900 C/lh, or 950 C/15min or 1000 C/60s. Dopant diffusion is strongly affected by the direct donor-acceptor interaction. Good agreement between experimental and simulation results can only be obtained using a simulation code which takes into account the formation of neutral, near immobile, Sb-B pairs.

Dopant Diffusion in Silicon Substrate during Oxynitride Process

2000 ◽  
Vol 610 ◽  
Author(s):  
Nobutoshi Aoki ◽  
Toshitake Yaegashi ◽  
Yuji Takeuchi ◽  
Makoto Fujiwara ◽  
Naoki Kusunoki ◽  
...  
Keyword(s):  
Reasonable Agreement ◽  
Nitrogen Concentration ◽  
Surface Recombination ◽  
Anomalous Behavior ◽  
Dopant Diffusion ◽  
Si Substrate ◽  
Enhanced Diffusion ◽  
Surface Recombination Rate ◽  
Oxynitride Film ◽  
Simulation Results

AbstractWe found an anomalous behavior of dopant diffusion in Si substrate during the oxynitride process. SIMS measurements showed a notably enhanced diffusion during the NO and N2O oxynitride process. The considerably enhanced diffusion was also observed in re-oxidation of oxynitride film grown by the NO annealing or NH3 nitridation of a SiO2 film. In order to simulate the enhanced diffusion, an enhancement coefficient was introduced, showing that the simulation results are in reasonable agreement with the experimental ones. We applied the diffusion model to the simulations of MOSFETs fabricated under various conditions of the oxynitride process. The device characteristics of MOSFETs were successfully reproduced by adopting a suitable dependence of nitrogen concentration CN on the surface recombination rate of interstitial Si at the oxynitride/Si substrate interface.

Theoretical Model And Computer Simulation Results Of Enhanced Diffusion Of High-Temperature Implanted Aluminum In Silicon Carbide

1997 ◽  
Vol 483 ◽  
Author(s):  
G. V. Gadiyak
Keyword(s):  
Experimental Data ◽  
Silicon Carbide ◽  
Kinetic Model ◽  
Enhanced Diffusion ◽  
Al Content ◽  
Mobile Species ◽  
Simulation Results ◽  
Doping Profiles ◽  
Sic Films ◽  
Good Agreement

AbstractWide applications of silicon carbide (SiC) films in microelectronics devices make especially important predictions of the doping profiles during and/or after thermal treatment. A macroscopic kinetic model of enhanced diffusion of aluminum in SiC films during ion bombardment at high temperatures has been considered. The set of equations describing the kinetic model takes into account generation Vc and Csi vacancies during bombardment, migration of mobile species (Al) toward the surface and reactions of Al atoms with Vc and Vsi vacancies, as well as Al evolution from the film. The calculations were carried out for the flux of Al ions with energy 40 keV and current density 20 μA/cm2 to a dose 2 1016 cm−2 at 1800° C. The calculations have shown that the Al content in SiC at these condition does not exceed 40%. The calculation profile of Al is in a good agreement with experimental data [1].

scholarly journals Measuring Hydrometeors Using a Precipitation Microphysical Characteristics Sensor: Sampling Effect of Different Bin Sizes on Drop Size Distribution Parameters

2018 ◽  
Vol 2018 ◽  
pp. 1-15 ◽  
Author(s):  
Xichuan Liu ◽  
Taichang Gao ◽  
Yuntao Hu ◽  
Xiaojian Shu
Keyword(s):  
Drop Size ◽  
Rain Rate ◽  
Monte Carlo Model ◽  
Rain Gauge ◽  
Sampling Schemes ◽  
Distribution Parameters ◽  
Optimum Sampling ◽  
Simulation Results ◽  
The Impact ◽  
Good Agreement

In order to improve the measurement of precipitation microphysical characteristics sensor (PMCS), the sampling process of raindrops by PMCS based on a particle-by-particle Monte-Carlo model was simulated to discuss the effect of different bin sizes on DSD measurement, and the optimum sampling bin sizes for PMCS were proposed based on the simulation results. The simulation results of five sampling schemes of bin sizes in four rain-rate categories show that the raw capture DSD has a significant fluctuation variation influenced by the capture probability, whereas the appropriate sampling bin size and width can reduce the impact of variation of raindrop number on DSD shape. A field measurement of a PMCS, an OTT PARSIVEL disdrometer, and a tipping bucket rain Gauge shows that the rain-rate and rainfall accumulations have good consistencies between PMCS, OTT, and Gauge; the DSD obtained by PMCS and OTT has a good agreement; the probability of N0, μ, and Λ shows that there is a good agreement between the Gamma parameters of PMCS and OTT; the fitted μ-Λ and Z-R relationship measured by PMCS is close to that measured by OTT, which validates the performance of PMCS on rain-rate, rainfall accumulation, and DSD related parameters.

scholarly journals In-Depth Investigation of a Donor–Acceptor Interaction on the Heavy-Group-14@Group-13-Diyls in Transition-Metal Tetrylone Complexes: Structure, Bonding, and Property

ACS Omega ◽  
2020 ◽  
Vol 5 (33) ◽  
pp. 21271-21287
Author(s):  
Huynh Thi Phuong Loan ◽  
Thanh Q. Bui ◽  
Tran Thi Ai My ◽  
Nguyen Thi Thanh Hai ◽  
Duong Tuan Quang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Group 14 ◽  
Acceptor Interaction ◽  
Group 13 ◽  
Donor Acceptor ◽  
Heavy Group

scholarly journals Simulation and Experimental Study on Wear of U-Shaped Rings of Power Connection Fittings under Strong Wind Environment

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 735
Author(s):  
Songchen Wang ◽  
Xianchen Yang ◽  
Xinmei Li ◽  
Cheng Chai ◽  
Gen Wang ◽  
...  
Keyword(s):  
Abrasive Wear ◽  
Adhesive Wear ◽  
Surface Hardness ◽  
Wear Depth ◽  
Strong Wind ◽  
Wear Model ◽  
Wind Environment ◽  
Simulation Results ◽  
Oxidation Wear ◽  
Good Agreement

The objective of this study was to investigate the wear characteristics of the U-shaped rings of power connection fittings, and to construct a wear failure prediction model of U-shaped rings in strong wind environments. First, the wear evolution and failure mechanism of U-shaped rings with different wear loads were studied by using a swinging wear tester. Then, based on the Archard wear model, the U-shaped ring wear was dynamically simulated in ABAQUS, via the Umeshmotion subroutine. The results indicated that the wear load has an important effect on the wear of the U-shaped ring. As the wear load increases, the surface hardness decreases, while plastic deformation layers increase. Furthermore, the wear mechanism transforms from adhesive wear, slight abrasive wear, and slight oxidation wear, to serious adhesive wear, abrasive wear, and oxidation wear with the increase of wear load. As plastic flow progresses, the dislocation density in ferrite increases, leading to dislocation plugs and cementite fractures. The simulation results of wear depth were in good agreement with the test value of, with an error of 1.56%.

Repeatable adhesion by proton donor-acceptor interaction of polymer brushes

Polymer ◽  
2017 ◽  
Vol 119 ◽  
pp. 167-175 ◽  
Author(s):  
Hayato Yoshioka ◽  
Chiharu Izumi ◽  
Miki Shida ◽  
Kazuo Yamaguchi ◽  
Motoyasu Kobayashi
Keyword(s):  
Polymer Brushes ◽  
Proton Donor ◽  
Acceptor Interaction ◽  
Donor Acceptor

Apparent donor-acceptor interaction between nitroaromatics and acetonitrile

1992 ◽  
Vol 21 (1) ◽  
pp. 105-108 ◽  
Author(s):  
Daniel C. Leggett ◽  
Paul H. Miyares ◽  
Thomas F. Jenkins
Keyword(s):  
Acceptor Interaction ◽  
Donor Acceptor
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